FR2981872B1 - Procede de polissage utilisant une formulation de polissage ajustable - Google Patents

Procede de polissage utilisant une formulation de polissage ajustable

Info

Publication number
FR2981872B1
FR2981872B1 FR1260264A FR1260264A FR2981872B1 FR 2981872 B1 FR2981872 B1 FR 2981872B1 FR 1260264 A FR1260264 A FR 1260264A FR 1260264 A FR1260264 A FR 1260264A FR 2981872 B1 FR2981872 B1 FR 2981872B1
Authority
FR
France
Prior art keywords
polishing
formulation
adjustable
polishing method
adjustable polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1260264A
Other languages
English (en)
Other versions
FR2981872A1 (fr
Inventor
Yi Guo
Kancharla-Arun Kumar Reddy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2981872A1 publication Critical patent/FR2981872A1/fr
Application granted granted Critical
Publication of FR2981872B1 publication Critical patent/FR2981872B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR1260264A 2011-10-27 2012-10-26 Procede de polissage utilisant une formulation de polissage ajustable Expired - Fee Related FR2981872B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/283,013 US8435420B1 (en) 2011-10-27 2011-10-27 Method of polishing using tunable polishing formulation

Publications (2)

Publication Number Publication Date
FR2981872A1 FR2981872A1 (fr) 2013-05-03
FR2981872B1 true FR2981872B1 (fr) 2016-02-19

Family

ID=48084432

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1260264A Expired - Fee Related FR2981872B1 (fr) 2011-10-27 2012-10-26 Procede de polissage utilisant une formulation de polissage ajustable

Country Status (7)

Country Link
US (1) US8435420B1 (fr)
JP (1) JP6021584B2 (fr)
KR (1) KR101917314B1 (fr)
CN (1) CN103084971B (fr)
DE (1) DE102012021050B4 (fr)
FR (1) FR2981872B1 (fr)
TW (1) TWI609073B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
JP7530969B2 (ja) * 2020-04-16 2024-08-08 富士フイルム株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
US11472984B1 (en) 2021-09-27 2022-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of enhancing the removal rate of polysilicon

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
JP2005072238A (ja) * 2003-08-25 2005-03-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2006120749A (ja) * 2004-10-20 2006-05-11 Sony Corp 研磨方法及び研磨装置
JP2009503910A (ja) * 2005-08-05 2009-01-29 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属フィルム平坦化用高スループット化学機械研磨組成物
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
JP2010067681A (ja) * 2008-09-09 2010-03-25 Fujifilm Corp 研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
JP2011216582A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp 研磨方法、および研磨液

Also Published As

Publication number Publication date
FR2981872A1 (fr) 2013-05-03
JP6021584B2 (ja) 2016-11-09
US20130109182A1 (en) 2013-05-02
DE102012021050B4 (de) 2022-07-07
KR101917314B1 (ko) 2018-11-09
DE102012021050A1 (de) 2013-05-02
TWI609073B (zh) 2017-12-21
KR20130048163A (ko) 2013-05-09
CN103084971A (zh) 2013-05-08
US8435420B1 (en) 2013-05-07
TW201326377A (zh) 2013-07-01
CN103084971B (zh) 2016-01-27
JP2013098557A (ja) 2013-05-20

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