FR2963476B1 - Procede de realisation d'un condensateur comprenant un reseau de nano-capacites - Google Patents
Procede de realisation d'un condensateur comprenant un reseau de nano-capacitesInfo
- Publication number
- FR2963476B1 FR2963476B1 FR1003212A FR1003212A FR2963476B1 FR 2963476 B1 FR2963476 B1 FR 2963476B1 FR 1003212 A FR1003212 A FR 1003212A FR 1003212 A FR1003212 A FR 1003212A FR 2963476 B1 FR2963476 B1 FR 2963476B1
- Authority
- FR
- France
- Prior art keywords
- nano
- capacitor
- producing
- capacity network
- capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/01—Form of self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/10—Multiple hybrid or EDL capacitors, e.g. arrays or modules
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1003212A FR2963476B1 (fr) | 2010-07-30 | 2010-07-30 | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
PCT/IB2011/053374 WO2012014177A1 (fr) | 2010-07-30 | 2011-07-28 | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
US13/813,166 US9165722B2 (en) | 2010-07-30 | 2011-07-28 | Method for producing a capacitor including an array of nanocapacitors |
EP11749250.4A EP2599105A1 (fr) | 2010-07-30 | 2011-07-28 | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1003212A FR2963476B1 (fr) | 2010-07-30 | 2010-07-30 | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2963476A1 FR2963476A1 (fr) | 2012-02-03 |
FR2963476B1 true FR2963476B1 (fr) | 2012-08-24 |
Family
ID=43545646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1003212A Expired - Fee Related FR2963476B1 (fr) | 2010-07-30 | 2010-07-30 | Procede de realisation d'un condensateur comprenant un reseau de nano-capacites |
Country Status (4)
Country | Link |
---|---|
US (1) | US9165722B2 (fr) |
EP (1) | EP2599105A1 (fr) |
FR (1) | FR2963476B1 (fr) |
WO (1) | WO2012014177A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013100916A1 (fr) * | 2011-12-27 | 2013-07-04 | Intel Corporation | Fabrication de varacteurs électrochimiques poreux |
US9076594B2 (en) * | 2013-03-12 | 2015-07-07 | Invensas Corporation | Capacitors using porous alumina structures |
US9640332B2 (en) * | 2013-12-20 | 2017-05-02 | Intel Corporation | Hybrid electrochemical capacitor |
WO2016126253A1 (fr) * | 2015-02-05 | 2016-08-11 | The Penn State Research Foundation | Réseaux de nanopores pour le tri, le filtrage, la surveillance ou la distribution biomédicaux, environnementaux et industriels |
CN108461629A (zh) * | 2018-03-02 | 2018-08-28 | 福建省福芯电子科技有限公司 | 硅基射频电容及其制备方法 |
US11220424B2 (en) | 2018-08-09 | 2022-01-11 | Honeywell International Inc. | Methods for increasing aspect ratios in comb structures |
KR20230059551A (ko) * | 2021-10-26 | 2023-05-03 | 삼성전기주식회사 | 커패시터 부품 및 커패시터 부품 제조 방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4434575B2 (ja) * | 2002-12-13 | 2010-03-17 | キヤノン株式会社 | 熱電変換素子及びその製造方法 |
US7049205B2 (en) * | 2004-10-25 | 2006-05-23 | Promos Technologies Inc. | Stacked capacitor and method for preparing the same |
KR100712525B1 (ko) * | 2005-08-16 | 2007-04-30 | 삼성전자주식회사 | 반도체 소자의 커패시터 및 그 제조방법 |
US7907037B2 (en) * | 2006-02-04 | 2011-03-15 | Evigia Systems, Inc. | Micro-electro-mechanical module |
DE102006013245A1 (de) * | 2006-03-22 | 2007-10-04 | Infineon Technologies Ag | Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren |
KR100839360B1 (ko) * | 2006-12-18 | 2008-06-19 | 삼성전자주식회사 | 패턴 형성 방법 및 이를 이용한 커패시터 제조 방법 |
KR100840782B1 (ko) * | 2007-01-16 | 2008-06-23 | 삼성전자주식회사 | 실록산 폴리머 조성물 및 이를 이용한 커패시터 제조 방법 |
KR100891647B1 (ko) * | 2007-02-01 | 2009-04-02 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
KR100881730B1 (ko) * | 2007-03-16 | 2009-02-06 | 주식회사 하이닉스반도체 | 캐패시터 및 그 제조 방법 |
US8159811B2 (en) * | 2007-10-19 | 2012-04-17 | Oh Young Joo | Metal capacitor and manufacturing method thereof |
JP2010156005A (ja) * | 2008-12-26 | 2010-07-15 | Kanagawa Acad Of Sci & Technol | 金属ナノ構造体アレーの製造方法および複合材料の製造方法 |
US20120088159A1 (en) * | 2009-06-26 | 2012-04-12 | Jayan Thomas | Nano-architectured carbon structures and methods for fabricating same |
KR20110008398A (ko) * | 2009-07-20 | 2011-01-27 | 삼성전자주식회사 | 막 구조물, 이를 포함하는 커패시터 및 그 제조 방법 |
US8317882B2 (en) * | 2009-07-24 | 2012-11-27 | Robert Bosch Gmbh | Method of manufacturing a planar electrode with large surface area |
-
2010
- 2010-07-30 FR FR1003212A patent/FR2963476B1/fr not_active Expired - Fee Related
-
2011
- 2011-07-28 WO PCT/IB2011/053374 patent/WO2012014177A1/fr active Application Filing
- 2011-07-28 US US13/813,166 patent/US9165722B2/en not_active Expired - Fee Related
- 2011-07-28 EP EP11749250.4A patent/EP2599105A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP2599105A1 (fr) | 2013-06-05 |
WO2012014177A1 (fr) | 2012-02-02 |
US20130224394A1 (en) | 2013-08-29 |
US9165722B2 (en) | 2015-10-20 |
FR2963476A1 (fr) | 2012-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
ST | Notification of lapse |
Effective date: 20200305 |