FR2959756A1 - Reacteur pyrolytique a pompage axial - Google Patents

Reacteur pyrolytique a pompage axial Download PDF

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Publication number
FR2959756A1
FR2959756A1 FR1001899A FR1001899A FR2959756A1 FR 2959756 A1 FR2959756 A1 FR 2959756A1 FR 1001899 A FR1001899 A FR 1001899A FR 1001899 A FR1001899 A FR 1001899A FR 2959756 A1 FR2959756 A1 FR 2959756A1
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FR
France
Prior art keywords
chamber
base plate
internal chamber
substrate holder
diffuser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1001899A
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English (en)
Other versions
FR2959756B1 (fr
Inventor
Franck Pouch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GLOBAL TECHNOLOGIES
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GLOBAL TECHNOLOGIES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GLOBAL TECHNOLOGIES filed Critical GLOBAL TECHNOLOGIES
Priority to FR1001899A priority Critical patent/FR2959756B1/fr
Publication of FR2959756A1 publication Critical patent/FR2959756A1/fr
Application granted granted Critical
Publication of FR2959756B1 publication Critical patent/FR2959756B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)

Abstract

L'invention concerne un réacteur pyrolytique qui comporte une enceinte interne 10, un circuit d'introduction de gaz de confinement débouchant dans cette enceinte interne 10 et un circuit d'injection de précurseurs dont le diffuseur 15 débouche aussi dans cette enceinte interne, une plaque de base fixée 16 sur la paroi latérale 11 de cette enceinte interne 10 face au diffuseur 15 pour délimiter une chambre de réaction, un porte-substrat 21 agencé dans cette chambre de réaction, une ouverture latérale 18 de pompage agencée dans cette enceinte interne 10 au-dessus de la plaque de base 16. De plus, le réacteur comporte une ouverture centrale 19 de pompage figurant dans la plaque de base 16.
FR1001899A 2010-05-04 2010-05-04 Reacteur pyrolytique a pompage axial Expired - Fee Related FR2959756B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1001899A FR2959756B1 (fr) 2010-05-04 2010-05-04 Reacteur pyrolytique a pompage axial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1001899A FR2959756B1 (fr) 2010-05-04 2010-05-04 Reacteur pyrolytique a pompage axial

Publications (2)

Publication Number Publication Date
FR2959756A1 true FR2959756A1 (fr) 2011-11-11
FR2959756B1 FR2959756B1 (fr) 2012-08-03

Family

ID=42712408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1001899A Expired - Fee Related FR2959756B1 (fr) 2010-05-04 2010-05-04 Reacteur pyrolytique a pompage axial

Country Status (1)

Country Link
FR (1) FR2959756B1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202733A (en) * 1981-06-09 1982-12-11 Matsushita Electric Ind Co Ltd Dry etching device
JPS5921026A (ja) * 1982-07-28 1984-02-02 Hitachi Ltd 半導体製造装置
EP0445596A2 (fr) * 1990-03-09 1991-09-11 Applied Materials, Inc. Réacteur à dôme double pour le traitement de semi-conducteurs
WO1991014798A1 (fr) * 1990-03-20 1991-10-03 Diamonex, Incorporated Reacteur ameliore de deposition en phase gazeuse pour procede chimique comprenant un filament chaud
US5372648A (en) * 1992-04-30 1994-12-13 Matsushita Electric Industrial Co., Ltd. Plasma CVD system
GB2317497A (en) * 1996-09-23 1998-03-25 Samsung Electronics Co Ltd Semiconductor wafer thermal processing apparatus
US6027792A (en) * 1995-10-03 2000-02-22 Kabushiki Kaisha Kobe Seiko Sho Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same
EP1422317A1 (fr) * 2001-08-01 2004-05-26 Tokyo Electron Limited Dispositif de traitement au gaz et procede de traitement au gaz

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202733A (en) * 1981-06-09 1982-12-11 Matsushita Electric Ind Co Ltd Dry etching device
JPS5921026A (ja) * 1982-07-28 1984-02-02 Hitachi Ltd 半導体製造装置
EP0445596A2 (fr) * 1990-03-09 1991-09-11 Applied Materials, Inc. Réacteur à dôme double pour le traitement de semi-conducteurs
WO1991014798A1 (fr) * 1990-03-20 1991-10-03 Diamonex, Incorporated Reacteur ameliore de deposition en phase gazeuse pour procede chimique comprenant un filament chaud
US5372648A (en) * 1992-04-30 1994-12-13 Matsushita Electric Industrial Co., Ltd. Plasma CVD system
US6027792A (en) * 1995-10-03 2000-02-22 Kabushiki Kaisha Kobe Seiko Sho Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same
GB2317497A (en) * 1996-09-23 1998-03-25 Samsung Electronics Co Ltd Semiconductor wafer thermal processing apparatus
EP1422317A1 (fr) * 2001-08-01 2004-05-26 Tokyo Electron Limited Dispositif de traitement au gaz et procede de traitement au gaz

Also Published As

Publication number Publication date
FR2959756B1 (fr) 2012-08-03

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