FR2956412B1 - Vanne d'obturation a volume constant d'une source de depot en phase vapeur - Google Patents

Vanne d'obturation a volume constant d'une source de depot en phase vapeur

Info

Publication number
FR2956412B1
FR2956412B1 FR1051100A FR1051100A FR2956412B1 FR 2956412 B1 FR2956412 B1 FR 2956412B1 FR 1051100 A FR1051100 A FR 1051100A FR 1051100 A FR1051100 A FR 1051100A FR 2956412 B1 FR2956412 B1 FR 2956412B1
Authority
FR
France
Prior art keywords
vapor phase
orifice
valve
constant volume
deposition source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1051100A
Other languages
English (en)
Other versions
FR2956412A1 (fr
Inventor
Bruno Dussert-Vidalet
Cedric Guerard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Astron Fiamm Safety SARL
Original Assignee
Astron Fiamm Safety SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1051100A priority Critical patent/FR2956412B1/fr
Application filed by Astron Fiamm Safety SARL filed Critical Astron Fiamm Safety SARL
Priority to KR1020137009078A priority patent/KR20130043249A/ko
Priority to PCT/EP2011/052173 priority patent/WO2011101326A1/fr
Priority to CN201180009699.2A priority patent/CN102762765B/zh
Priority to CA2786273A priority patent/CA2786273A1/fr
Priority to EP11707362.7A priority patent/EP2536869B1/fr
Priority to KR1020127023474A priority patent/KR20130005273A/ko
Priority to JP2012552426A priority patent/JP5625070B2/ja
Priority to KR1020137009082A priority patent/KR20130043250A/ko
Priority to US13/574,076 priority patent/US20120285380A1/en
Publication of FR2956412A1 publication Critical patent/FR2956412A1/fr
Application granted granted Critical
Publication of FR2956412B1 publication Critical patent/FR2956412B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Une source de déposition d'un matériau en phase vapeur comportant une enceinte pourvue de deux zones est décrite. La première zone est une zone de production de vapeur dotée d'un réceptacle du matériau et de moyens de chauffage du matériau placé dans le réceptacle. La seconde est une zone de diffusion présentant une chambre en liaison avec la zone de production et dotée d'au moins un orifice de sorte à transmettre le matériau en phase vapeur vers l'extérieur de l'enceinte à travers l'orifice. La source est caractérisée par le fait qu'elle comporte des moyens d'obturation de l'orifice et des moyens de déplacement des moyens d'obturation entre une position active d'obturation et une position d'ouverture de l'orifice sans changement de volume de la zone de diffusion.
FR1051100A 2010-02-16 2010-02-16 Vanne d'obturation a volume constant d'une source de depot en phase vapeur Expired - Fee Related FR2956412B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1051100A FR2956412B1 (fr) 2010-02-16 2010-02-16 Vanne d'obturation a volume constant d'une source de depot en phase vapeur
KR1020137009082A KR20130043250A (ko) 2010-02-16 2011-02-15 기상 증착 소스를 위한 정적 폐쇄 밸브
CN201180009699.2A CN102762765B (zh) 2010-02-16 2011-02-15 用于汽相淀积源的等容关闭阀
CA2786273A CA2786273A1 (fr) 2010-02-16 2011-02-15 Vanne de fermeture a volume constant pour une source de depot en phase vapeur
EP11707362.7A EP2536869B1 (fr) 2010-02-16 2011-02-15 Vanne d'obturation a volume constant d'une source de depot en phase vapeur
KR1020127023474A KR20130005273A (ko) 2010-02-16 2011-02-15 기상 증착 소스를 위한 정적 폐쇄 밸브
KR1020137009078A KR20130043249A (ko) 2010-02-16 2011-02-15 기상 증착 소스를 위한 정적 폐쇄 밸브
PCT/EP2011/052173 WO2011101326A1 (fr) 2010-02-16 2011-02-15 Vanne de fermeture à volume constant pour une source de dépôt en phase vapeur
US13/574,076 US20120285380A1 (en) 2010-02-16 2011-02-15 Constant volume closure valve for vapor phase deposition source
JP2012552426A JP5625070B2 (ja) 2010-02-16 2011-02-15 気相蒸着供給源のための一定体積閉止バルブ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051100A FR2956412B1 (fr) 2010-02-16 2010-02-16 Vanne d'obturation a volume constant d'une source de depot en phase vapeur

Publications (2)

Publication Number Publication Date
FR2956412A1 FR2956412A1 (fr) 2011-08-19
FR2956412B1 true FR2956412B1 (fr) 2012-04-06

Family

ID=42270492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051100A Expired - Fee Related FR2956412B1 (fr) 2010-02-16 2010-02-16 Vanne d'obturation a volume constant d'une source de depot en phase vapeur

Country Status (8)

Country Link
US (1) US20120285380A1 (fr)
EP (1) EP2536869B1 (fr)
JP (1) JP5625070B2 (fr)
KR (3) KR20130043249A (fr)
CN (1) CN102762765B (fr)
CA (1) CA2786273A1 (fr)
FR (1) FR2956412B1 (fr)
WO (1) WO2011101326A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981667B1 (fr) * 2011-10-21 2014-07-04 Riber Systeme d'injection pour dispositif de depot de couches minces par evaporation sous vide
KR101364978B1 (ko) * 2012-08-16 2014-02-21 주식회사 선익시스템 분리형 증착물질 공급장치
CN104099571A (zh) * 2013-04-01 2014-10-15 上海和辉光电有限公司 蒸发源组件和薄膜沉积装置和薄膜沉积方法
US20150024538A1 (en) * 2013-07-19 2015-01-22 Tsmc Solar Ltd. Vapor dispensing apparatus and method for solar panel

Family Cites Families (21)

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US3058842A (en) * 1958-12-29 1962-10-16 Ibm Evaporation method
ES2067381B1 (es) * 1993-01-14 1995-10-16 Consejo Superior Investigacion Celula de efusion de fosforo para epitaxia de haces moleculares.
US5698252A (en) * 1995-05-31 1997-12-16 Nabisco Technology Company Topical application of particulates for production of reduced fat, low fat, and no-fat baked goods and snacks
DE19843818A1 (de) * 1998-09-24 2000-03-30 Leybold Systems Gmbh Bedampfungsvorrichtung für Vakuum-Bedampfungsanlagen
DE19848177A1 (de) * 1998-10-20 2000-04-27 Leybold Systems Gmbh Bedampfungsvorrichtung
US6830626B1 (en) * 1999-10-22 2004-12-14 Kurt J. Lesker Company Method and apparatus for coating a substrate in a vacuum
JP2002161355A (ja) * 2000-11-21 2002-06-04 Ayumi Kogyo Kk 真空蒸着用蒸発材料収容容器
JP4099092B2 (ja) * 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US7611587B2 (en) * 2003-05-16 2009-11-03 Chow Peter P Thin-film deposition evaporator
DE10330401B3 (de) * 2003-07-04 2005-02-24 Applied Films Gmbh & Co. Kg Verfahren und Vorrichtung zum bereichsweisen Auftragen von Trennmitteln
JP4535908B2 (ja) * 2005-03-14 2010-09-01 日立造船株式会社 蒸着装置
ATE520799T1 (de) * 2005-10-26 2011-09-15 Applied Materials Gmbh & Co Kg Vorrichtung zum bedampfen von substraten
US20070178225A1 (en) * 2005-12-14 2007-08-02 Keiji Takanosu Vapor deposition crucible, thin-film forming apparatus comprising the same, and method of producing display device
JP2007186787A (ja) * 2005-12-14 2007-07-26 Hitachi Displays Ltd 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法
KR100770653B1 (ko) * 2006-05-25 2007-10-29 에이엔 에스 주식회사 박막형성용 증착장치
JP5036264B2 (ja) * 2006-09-19 2012-09-26 日立造船株式会社 真空蒸着装置
JP4768584B2 (ja) * 2006-11-16 2011-09-07 財団法人山形県産業技術振興機構 蒸発源およびこれを用いた真空蒸着装置
EP2109899A4 (fr) * 2006-12-19 2012-12-12 Veeco Instr Inc Sources de depot de vapeur et procedes
CN102301032A (zh) * 2008-12-18 2011-12-28 维易科精密仪器国际贸易(上海)有限公司 具有加热的泻流孔的真空沉积源

Also Published As

Publication number Publication date
CA2786273A1 (fr) 2011-08-25
EP2536869B1 (fr) 2014-01-08
EP2536869A1 (fr) 2012-12-26
FR2956412A1 (fr) 2011-08-19
KR20130005273A (ko) 2013-01-15
CN102762765B (zh) 2014-12-03
JP2013519788A (ja) 2013-05-30
KR20130043249A (ko) 2013-04-29
WO2011101326A1 (fr) 2011-08-25
US20120285380A1 (en) 2012-11-15
KR20130043250A (ko) 2013-04-29
JP5625070B2 (ja) 2014-11-12
CN102762765A (zh) 2012-10-31

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Effective date: 20151030