FR2921754B1 - Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante - Google Patents

Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante

Info

Publication number
FR2921754B1
FR2921754B1 FR0757916A FR0757916A FR2921754B1 FR 2921754 B1 FR2921754 B1 FR 2921754B1 FR 0757916 A FR0757916 A FR 0757916A FR 0757916 A FR0757916 A FR 0757916A FR 2921754 B1 FR2921754 B1 FR 2921754B1
Authority
FR
France
Prior art keywords
subtract
semiconductor
manufacturing
insulating layer
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0757916A
Other languages
English (en)
Other versions
FR2921754A1 (fr
Inventor
Aomar Halimaoui
Daniel Bensahel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0757916A priority Critical patent/FR2921754B1/fr
Priority to PCT/FR2008/051717 priority patent/WO2009050379A1/fr
Priority to US12/679,271 priority patent/US8536027B2/en
Priority to EP08840579A priority patent/EP2191501A1/fr
Publication of FR2921754A1 publication Critical patent/FR2921754A1/fr
Application granted granted Critical
Publication of FR2921754B1 publication Critical patent/FR2921754B1/fr
Priority to US13/907,547 priority patent/US9356094B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76262—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
FR0757916A 2007-09-28 2007-09-28 Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante Expired - Fee Related FR2921754B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0757916A FR2921754B1 (fr) 2007-09-28 2007-09-28 Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante
PCT/FR2008/051717 WO2009050379A1 (fr) 2007-09-28 2008-09-26 Procede de fabrication d'un substrat semiconducteur localise sur une couche isolante
US12/679,271 US8536027B2 (en) 2007-09-28 2008-09-26 Method for making a semi-conducting substrate located on an insulation layer
EP08840579A EP2191501A1 (fr) 2007-09-28 2008-09-26 Procede de fabrication d'un substrat semiconducteur localise sur une couche isolante
US13/907,547 US9356094B2 (en) 2007-09-28 2013-05-31 Method for making a semi-conducting substrate located on an insulation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0757916A FR2921754B1 (fr) 2007-09-28 2007-09-28 Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante

Publications (2)

Publication Number Publication Date
FR2921754A1 FR2921754A1 (fr) 2009-04-03
FR2921754B1 true FR2921754B1 (fr) 2009-11-27

Family

ID=39678860

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0757916A Expired - Fee Related FR2921754B1 (fr) 2007-09-28 2007-09-28 Procede de fabrication d'un subtrat semiconducteur localise sur une couche isolante

Country Status (4)

Country Link
US (2) US8536027B2 (fr)
EP (1) EP2191501A1 (fr)
FR (1) FR2921754B1 (fr)
WO (1) WO2009050379A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012256A1 (fr) * 2013-10-17 2015-04-24 St Microelectronics Tours Sas Composant de puissance vertical haute tension
DE102019108754A1 (de) * 2019-03-06 2020-09-10 Infineon Technologies Ag Halbleitervorrichtung mit einem porösen bereich, waferverbundstruktur und verfahren zum herstellen einerhalbleitervorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245571A1 (en) * 2003-02-13 2004-12-09 Zhiyuan Cheng Semiconductor-on-insulator article and method of making same
JP2005183845A (ja) * 2003-12-22 2005-07-07 Canon Inc 多孔質シリコン領域を有する部材、及び、シリコンを含む部材の製造方法
FR2887370B1 (fr) * 2005-06-17 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un transistor isole a canal contraint
JP2007235056A (ja) * 2006-03-03 2007-09-13 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
FR2921754A1 (fr) 2009-04-03
US20100289123A1 (en) 2010-11-18
US9356094B2 (en) 2016-05-31
US8536027B2 (en) 2013-09-17
WO2009050379A1 (fr) 2009-04-23
US20130264678A1 (en) 2013-10-10
EP2191501A1 (fr) 2010-06-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150529