FR2921193B1 - Point memoire de memoire statique et application a un capteur d'image - Google Patents

Point memoire de memoire statique et application a un capteur d'image

Info

Publication number
FR2921193B1
FR2921193B1 FR0706463A FR0706463A FR2921193B1 FR 2921193 B1 FR2921193 B1 FR 2921193B1 FR 0706463 A FR0706463 A FR 0706463A FR 0706463 A FR0706463 A FR 0706463A FR 2921193 B1 FR2921193 B1 FR 2921193B1
Authority
FR
France
Prior art keywords
memory
image sensor
sensor application
point
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0706463A
Other languages
English (en)
Other versions
FR2921193A1 (fr
Inventor
Caroline Papaix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR0706463A priority Critical patent/FR2921193B1/fr
Priority to PCT/EP2008/062114 priority patent/WO2009034156A2/fr
Priority to EP08804079A priority patent/EP2188810A2/fr
Priority to US12/678,116 priority patent/US20100232214A1/en
Priority to TW097135362A priority patent/TW200929218A/zh
Publication of FR2921193A1 publication Critical patent/FR2921193A1/fr
Application granted granted Critical
Publication of FR2921193B1 publication Critical patent/FR2921193B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR0706463A 2007-09-14 2007-09-14 Point memoire de memoire statique et application a un capteur d'image Active FR2921193B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0706463A FR2921193B1 (fr) 2007-09-14 2007-09-14 Point memoire de memoire statique et application a un capteur d'image
PCT/EP2008/062114 WO2009034156A2 (fr) 2007-09-14 2008-09-12 Point memoire de memoire statique et application a un capteur d'image
EP08804079A EP2188810A2 (fr) 2007-09-14 2008-09-12 Point memoire de memoire statique et application a un capteur d'image
US12/678,116 US20100232214A1 (en) 2007-09-14 2008-09-12 Static memory memory point and application to an image sensor
TW097135362A TW200929218A (en) 2007-09-14 2008-09-15 Memory point of a static memory and application to an image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0706463A FR2921193B1 (fr) 2007-09-14 2007-09-14 Point memoire de memoire statique et application a un capteur d'image

Publications (2)

Publication Number Publication Date
FR2921193A1 FR2921193A1 (fr) 2009-03-20
FR2921193B1 true FR2921193B1 (fr) 2011-04-08

Family

ID=38799313

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0706463A Active FR2921193B1 (fr) 2007-09-14 2007-09-14 Point memoire de memoire statique et application a un capteur d'image

Country Status (5)

Country Link
US (1) US20100232214A1 (fr)
EP (1) EP2188810A2 (fr)
FR (1) FR2921193B1 (fr)
TW (1) TW200929218A (fr)
WO (1) WO2009034156A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2932904B1 (fr) * 2008-06-19 2011-02-25 Eads Europ Aeronautic Defence Procede de detection de correction d'erreurs pour une memoire dont la structure est a comportement dissymetrique
TWI739431B (zh) * 2019-12-09 2021-09-11 大陸商廣州印芯半導體技術有限公司 資料傳輸系統及其資料傳輸方法
US11581049B2 (en) * 2021-06-01 2023-02-14 Sandisk Technologies Llc System and methods for programming nonvolatile memory having partial select gate drains

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05120882A (ja) * 1991-10-29 1993-05-18 Hitachi Ltd 半導体記憶装置
US6985181B2 (en) * 2000-05-09 2006-01-10 Pixim, Inc. CMOS sensor array with a memory interface
JP4711531B2 (ja) * 2001-03-23 2011-06-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
JP2005025907A (ja) * 2003-07-03 2005-01-27 Hitachi Ltd 半導体集積回路装置
US6975532B1 (en) * 2004-07-08 2005-12-13 International Business Machines Corporation Quasi-static random access memory
US7259986B2 (en) * 2005-03-25 2007-08-21 International Business Machines Corporation Circuits and methods for providing low voltage, high performance register files
US7672152B1 (en) * 2007-02-27 2010-03-02 Purdue Research Foundation Memory cell with built-in process variation tolerance

Also Published As

Publication number Publication date
US20100232214A1 (en) 2010-09-16
TW200929218A (en) 2009-07-01
FR2921193A1 (fr) 2009-03-20
EP2188810A2 (fr) 2010-05-26
WO2009034156A2 (fr) 2009-03-19
WO2009034156A3 (fr) 2009-06-04

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