FR2876383B1 - Composition de revetement anti-reflechissant superieur et procede de formation de motif de dispositif semiconducteur l'utilisant - Google Patents
Composition de revetement anti-reflechissant superieur et procede de formation de motif de dispositif semiconducteur l'utilisantInfo
- Publication number
- FR2876383B1 FR2876383B1 FR0507165A FR0507165A FR2876383B1 FR 2876383 B1 FR2876383 B1 FR 2876383B1 FR 0507165 A FR0507165 A FR 0507165A FR 0507165 A FR0507165 A FR 0507165A FR 2876383 B1 FR2876383 B1 FR 2876383B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- same
- coating composition
- reflective coating
- forming semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006117 anti-reflective coating Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/41—Compounds containing sulfur bound to oxygen
- C08K5/42—Sulfonic acids; Derivatives thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040069044A KR100642416B1 (ko) | 2004-08-31 | 2004-08-31 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2876383A1 FR2876383A1 (fr) | 2006-04-14 |
FR2876383B1 true FR2876383B1 (fr) | 2009-06-26 |
Family
ID=36087946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0507165A Expired - Fee Related FR2876383B1 (fr) | 2004-08-31 | 2005-07-05 | Composition de revetement anti-reflechissant superieur et procede de formation de motif de dispositif semiconducteur l'utilisant |
Country Status (8)
Country | Link |
---|---|
US (1) | US7288364B2 (fr) |
JP (1) | JP4573717B2 (fr) |
KR (1) | KR100642416B1 (fr) |
CN (1) | CN100514189C (fr) |
DE (1) | DE102005038913A1 (fr) |
FR (1) | FR2876383B1 (fr) |
IT (1) | ITTO20050456A1 (fr) |
TW (1) | TWI333129B (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4595606B2 (ja) * | 2005-03-17 | 2010-12-08 | Jsr株式会社 | 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法 |
TWI598223B (zh) * | 2006-03-10 | 2017-09-11 | 羅門哈斯電子材料有限公司 | 用於光微影之組成物及製程 |
JP5162934B2 (ja) * | 2007-03-23 | 2013-03-13 | Jsr株式会社 | 上層反射防止膜形成用組成物及びレジストパターン形成方法 |
KR101622797B1 (ko) * | 2008-07-17 | 2016-05-19 | 제이에스알 가부시끼가이샤 | 제1막의 개질 방법 및 이것에 이용하는 산 전사 수지막 형성용 조성물 |
JP5423367B2 (ja) * | 2009-01-23 | 2014-02-19 | Jsr株式会社 | 酸転写用組成物、酸転写用膜及びパターン形成方法 |
JP5434232B2 (ja) * | 2009-04-24 | 2014-03-05 | Jsr株式会社 | バイオチップ製造用樹脂組成物及びバイオチップの製造方法 |
CN101989046B (zh) * | 2009-08-06 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | 图形转移方法和掩模版制作方法 |
CN103488045B (zh) * | 2012-06-14 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种离子注入的阻挡层制作方法 |
US9703200B2 (en) * | 2013-12-31 | 2017-07-11 | Rohm And Haas Electronic Materials Llc | Photolithographic methods |
CN105005179A (zh) * | 2013-12-31 | 2015-10-28 | 罗门哈斯电子材料有限公司 | 光致抗蚀剂保护层组合物 |
JP6134367B2 (ja) | 2014-10-31 | 2017-05-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジスト保護膜組成物 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0522990B1 (fr) | 1991-06-28 | 1996-09-25 | International Business Machines Corporation | Films superficiels antiréfléchissants |
US5879853A (en) | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
US6274295B1 (en) | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
JP3724159B2 (ja) * | 1997-11-04 | 2005-12-07 | コニカミノルタホールディングス株式会社 | 感光性組成物 |
JP3925882B2 (ja) * | 1998-05-28 | 2007-06-06 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物 |
JP3967466B2 (ja) * | 1998-06-19 | 2007-08-29 | 信越化学工業株式会社 | 反射防止膜材料 |
JP2000275835A (ja) * | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
US6984482B2 (en) * | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
KR100401116B1 (ko) | 1999-06-03 | 2003-10-10 | 주식회사 하이닉스반도체 | 아민오염방지 물질 및 이를 이용한 미세패턴 형성방법 |
TW502133B (en) * | 1999-06-10 | 2002-09-11 | Wako Pure Chem Ind Ltd | Resist composition, agent and method for reducing substrate dependence thereof |
KR100474544B1 (ko) * | 1999-11-12 | 2005-03-08 | 주식회사 하이닉스반도체 | Tips 공정용 포토레지스트 조성물 |
JP2002055454A (ja) * | 2000-08-11 | 2002-02-20 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP2002278071A (ja) * | 2001-03-21 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP4016765B2 (ja) * | 2001-08-24 | 2007-12-05 | Jsr株式会社 | パターン形成方法およびパターン形成用多層膜 |
JP3666807B2 (ja) * | 2001-12-03 | 2005-06-29 | 東京応化工業株式会社 | ホトレジストパターンの形成方法およびホトレジスト積層体 |
JP2003345026A (ja) | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法 |
JP2004054209A (ja) * | 2002-05-27 | 2004-02-19 | Jsr Corp | パターン形成方法および感放射線性樹脂組成物 |
KR100480235B1 (ko) * | 2002-07-18 | 2005-04-06 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
KR100574491B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
KR100599076B1 (ko) * | 2004-05-31 | 2006-07-13 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법 |
KR100745064B1 (ko) * | 2004-09-17 | 2007-08-01 | 주식회사 하이닉스반도체 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
KR100574496B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부반사방지막 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
-
2004
- 2004-08-31 KR KR1020040069044A patent/KR100642416B1/ko active IP Right Grant
-
2005
- 2005-06-22 TW TW094120730A patent/TWI333129B/zh active
- 2005-06-29 IT IT000456A patent/ITTO20050456A1/it unknown
- 2005-07-05 FR FR0507165A patent/FR2876383B1/fr not_active Expired - Fee Related
- 2005-07-08 US US11/177,738 patent/US7288364B2/en active Active
- 2005-07-12 JP JP2005202803A patent/JP4573717B2/ja not_active Expired - Fee Related
- 2005-08-17 DE DE102005038913A patent/DE102005038913A1/de not_active Withdrawn
- 2005-08-19 CN CNB2005100921159A patent/CN100514189C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200617028A (en) | 2006-06-01 |
US7288364B2 (en) | 2007-10-30 |
TWI333129B (en) | 2010-11-11 |
DE102005038913A1 (de) | 2006-03-09 |
CN100514189C (zh) | 2009-07-15 |
FR2876383A1 (fr) | 2006-04-14 |
CN1743956A (zh) | 2006-03-08 |
JP2006072329A (ja) | 2006-03-16 |
KR20060020242A (ko) | 2006-03-06 |
KR100642416B1 (ko) | 2006-11-03 |
ITTO20050456A1 (it) | 2006-03-01 |
US20060046184A1 (en) | 2006-03-02 |
DE102005038913A9 (de) | 2011-12-29 |
JP4573717B2 (ja) | 2010-11-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20160331 |