FR2848728B1 - Matrice de formation d'image et procedes pour sa fabrication - Google Patents

Matrice de formation d'image et procedes pour sa fabrication

Info

Publication number
FR2848728B1
FR2848728B1 FR0314449A FR0314449A FR2848728B1 FR 2848728 B1 FR2848728 B1 FR 2848728B1 FR 0314449 A FR0314449 A FR 0314449A FR 0314449 A FR0314449 A FR 0314449A FR 2848728 B1 FR2848728 B1 FR 2848728B1
Authority
FR
France
Prior art keywords
methods
image forming
making same
forming matrix
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0314449A
Other languages
English (en)
French (fr)
Other versions
FR2848728A1 (fr
Inventor
George Edward Possin
Robert Forrest Kwasnick
Douglas Albagli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2848728A1 publication Critical patent/FR2848728A1/fr
Application granted granted Critical
Publication of FR2848728B1 publication Critical patent/FR2848728B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
FR0314449A 2002-12-17 2003-12-10 Matrice de formation d'image et procedes pour sa fabrication Expired - Fee Related FR2848728B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/322,117 US7307301B2 (en) 2002-12-17 2002-12-17 Imaging array

Publications (2)

Publication Number Publication Date
FR2848728A1 FR2848728A1 (fr) 2004-06-18
FR2848728B1 true FR2848728B1 (fr) 2008-02-22

Family

ID=32393011

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0314449A Expired - Fee Related FR2848728B1 (fr) 2002-12-17 2003-12-10 Matrice de formation d'image et procedes pour sa fabrication

Country Status (4)

Country Link
US (1) US7307301B2 (enExample)
JP (1) JP2004200692A (enExample)
DE (1) DE10357919A1 (enExample)
FR (1) FR2848728B1 (enExample)

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US8053777B2 (en) * 2005-03-31 2011-11-08 General Electric Company Thin film transistors for imaging system and method of making the same
JP5280671B2 (ja) * 2006-12-20 2013-09-04 富士フイルム株式会社 画像検出器および放射線検出システム
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
CN102315245A (zh) 2010-07-09 2012-01-11 卡西欧计算机株式会社 晶体管构造体及发光装置
TW201218367A (en) * 2010-09-14 2012-05-01 Casio Computer Co Ltd Transistor structure, manufacturing method of transistor structure, and light emitting apparatus
US9052399B2 (en) 2011-12-30 2015-06-09 Saint-Gobain Ceramics & Plastics, Inc. Scintillator pixel array with reduced cross talk
CN103247640B (zh) * 2012-02-13 2016-04-06 群康科技(深圳)有限公司 主动矩阵式影像感测面板及装置
CN103972249B (zh) * 2013-02-05 2017-04-12 群创光电股份有限公司 主动矩阵式影像感测面板及装置
KR101442962B1 (ko) * 2013-03-04 2014-09-23 주식회사 동부하이텍 이미지 센서
CN104078421B (zh) * 2013-03-29 2018-01-30 北京京东方光电科技有限公司 非晶硅光电二极管基板的制造方法、基板及半导体装置
TWI538177B (zh) * 2014-04-15 2016-06-11 友達光電股份有限公司 光感應裝置及其製作方法
CN107894671B (zh) * 2017-11-03 2021-01-08 惠科股份有限公司 一种阵列基板和阵列基板的制造方法
KR102517730B1 (ko) * 2017-12-27 2023-04-03 엘지디스플레이 주식회사 디지털 엑스레이 검출기 패널과 이를 포함하는 엑스레이 시스템
CN108376688A (zh) * 2018-04-28 2018-08-07 京东方科技集团股份有限公司 一种感光组件及其制备方法、阵列基板、显示装置
CN120111980A (zh) * 2025-02-26 2025-06-06 京东方科技集团股份有限公司 一种探测基板、制备方法和探测装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142327B2 (ja) 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法
JPH04321273A (ja) * 1991-04-19 1992-11-11 Fuji Xerox Co Ltd イメージセンサ
US5435608A (en) 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
US5517031A (en) 1994-06-21 1996-05-14 General Electric Company Solid state imager with opaque layer
JPH0837288A (ja) * 1994-07-22 1996-02-06 Fuji Xerox Co Ltd 画像読取装置
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
TW384412B (en) 1995-11-17 2000-03-11 Semiconductor Energy Lab Display device
JPH09275202A (ja) 1996-04-05 1997-10-21 Canon Inc 光検出装置
US5838054A (en) 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
US6066883A (en) 1998-03-16 2000-05-23 Xerox Corporation Guarding for a CMOS photosensor chip
US6031248A (en) * 1998-04-28 2000-02-29 Xerox Corporation Hybrid sensor pixel architecture
JP3796072B2 (ja) * 1999-08-04 2006-07-12 シャープ株式会社 透過型液晶表示装置
US6396046B1 (en) * 1999-11-02 2002-05-28 General Electric Company Imager with reduced FET photoresponse and high integrity contact via

Also Published As

Publication number Publication date
JP2004200692A (ja) 2004-07-15
US7307301B2 (en) 2007-12-11
FR2848728A1 (fr) 2004-06-18
DE10357919A1 (de) 2004-07-29
US20040115857A1 (en) 2004-06-17

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Legal Events

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Effective date: 20130830