FR2833768B1 - Laser a resonnateur externe accordable en longueur d'onde utilisant un deflecteur optique - Google Patents

Laser a resonnateur externe accordable en longueur d'onde utilisant un deflecteur optique

Info

Publication number
FR2833768B1
FR2833768B1 FR0208065A FR0208065A FR2833768B1 FR 2833768 B1 FR2833768 B1 FR 2833768B1 FR 0208065 A FR0208065 A FR 0208065A FR 0208065 A FR0208065 A FR 0208065A FR 2833768 B1 FR2833768 B1 FR 2833768B1
Authority
FR
France
Prior art keywords
wave length
optical deflector
external resonator
resonator laser
length tuning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0208065A
Other languages
English (en)
Other versions
FR2833768A1 (fr
Inventor
Kwang Ryong Oh
Myung Lae Lee
Hyun Soo Kim
Jung Ho Song
Kang Ho Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
Original Assignee
Electronics and Telecommunications Research Institute ETRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronics and Telecommunications Research Institute ETRI filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of FR2833768A1 publication Critical patent/FR2833768A1/fr
Application granted granted Critical
Publication of FR2833768B1 publication Critical patent/FR2833768B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
FR0208065A 2001-12-15 2002-06-28 Laser a resonnateur externe accordable en longueur d'onde utilisant un deflecteur optique Expired - Fee Related FR2833768B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0079683A KR100444176B1 (ko) 2001-12-15 2001-12-15 전기 신호에 의해 동작되는 광 편향기 및 이를 이용한파장 가변형 외부 공진기

Publications (2)

Publication Number Publication Date
FR2833768A1 FR2833768A1 (fr) 2003-06-20
FR2833768B1 true FR2833768B1 (fr) 2006-10-20

Family

ID=19717078

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0208065A Expired - Fee Related FR2833768B1 (fr) 2001-12-15 2002-06-28 Laser a resonnateur externe accordable en longueur d'onde utilisant un deflecteur optique

Country Status (5)

Country Link
US (1) US6810047B2 (fr)
JP (1) JP2003198056A (fr)
KR (1) KR100444176B1 (fr)
CA (1) CA2391796C (fr)
FR (1) FR2833768B1 (fr)

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JP3795500B2 (ja) * 2004-05-11 2006-07-12 独立行政法人科学技術振興機構 リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置
KR100550141B1 (ko) * 2004-08-09 2006-02-08 한국전자통신연구원 가변 광 편향기를 이용한 파장 가변형 외부 공진 레이저다이오드
US7639955B2 (en) * 2004-09-02 2009-12-29 Finisar Corporation Method and apparatus for transmitting a signal using a chirp managed laser (CML) and an optical spectrum reshaper (OSR) before an optical receiver
JP4527479B2 (ja) * 2004-09-10 2010-08-18 サンテック株式会社 波長走査型ファイバレーザ光源
KR100604957B1 (ko) * 2004-10-18 2006-07-28 한국전자통신연구원 광 편향기
KR100679241B1 (ko) * 2004-12-14 2007-02-05 한국전자통신연구원 광 편향기를 구비한 파장가변 다중화기, 역다중화기 및 파장가변 레이저
US20070012860A1 (en) * 2005-05-05 2007-01-18 Daniel Mahgerefteh Optical source with ultra-low relative intensity noise (RIN)
KR100701006B1 (ko) * 2005-05-31 2007-03-29 한국전자통신연구원 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드
JP3989939B2 (ja) 2005-07-02 2007-10-10 韓國電子通信研究院 光増幅器、ビーム操縦器及び凹回折格子が集積された波長可変光源素子
JP4376837B2 (ja) * 2005-08-05 2009-12-02 サンテック株式会社 波長走査型レーザ光源
JP5121150B2 (ja) * 2006-02-28 2013-01-16 サンテック株式会社 波長可変レーザ光源
US7697186B2 (en) * 2006-10-24 2010-04-13 Finisar Corporation Spectral response modification via spatial filtering with optical fiber
US7962045B2 (en) 2006-12-22 2011-06-14 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US7941057B2 (en) 2006-12-28 2011-05-10 Finisar Corporation Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal
US8131157B2 (en) * 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
WO2008097928A1 (fr) 2007-02-02 2008-08-14 Finisar Corporation Emballage stabilisant la température pour composants optoélectroniques dans un module d'émetteur
US8027593B2 (en) 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
US7991291B2 (en) 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
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US8204386B2 (en) * 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US7991297B2 (en) * 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US7760777B2 (en) * 2007-04-13 2010-07-20 Finisar Corporation DBR laser with improved thermal tuning efficiency
US7778295B2 (en) * 2007-05-14 2010-08-17 Finisar Corporation DBR laser with improved thermal tuning efficiency
WO2009097740A1 (fr) * 2008-02-04 2009-08-13 National Institute Of Metrology P.R.China Cavité f-p repliée monolithique et laser à semi-conducteur utilisant ladite cavité
KR20110002020A (ko) 2008-03-12 2011-01-06 하이프레스 인코포레이티드 디지털 ｒｆ 트랜시버 시스템 및 방법
US7869473B2 (en) * 2008-03-21 2011-01-11 Finisar Corporation Directly modulated laser with isolated modulated gain electrode for improved frequency modulation
KR100945422B1 (ko) * 2008-04-04 2010-03-04 (주)레이저옵텍 파장가변 외부공진 레이저
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Also Published As

Publication number Publication date
FR2833768A1 (fr) 2003-06-20
CA2391796C (fr) 2007-04-03
US6810047B2 (en) 2004-10-26
US20030112838A1 (en) 2003-06-19
JP2003198056A (ja) 2003-07-11
CA2391796A1 (fr) 2003-06-15
KR100444176B1 (ko) 2004-08-09
KR20030049475A (ko) 2003-06-25

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Effective date: 20130228