FR2827079B1 - Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede - Google Patents

Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede

Info

Publication number
FR2827079B1
FR2827079B1 FR0108860A FR0108860A FR2827079B1 FR 2827079 B1 FR2827079 B1 FR 2827079B1 FR 0108860 A FR0108860 A FR 0108860A FR 0108860 A FR0108860 A FR 0108860A FR 2827079 B1 FR2827079 B1 FR 2827079B1
Authority
FR
France
Prior art keywords
diamond substrate
producing
substrate obtained
diamond
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0108860A
Other languages
English (en)
Other versions
FR2827079A1 (fr
Inventor
Christophe Beuille
Fabrice Breit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom Transport Technologies SAS
Original Assignee
Alstom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom SA filed Critical Alstom SA
Priority to FR0108860A priority Critical patent/FR2827079B1/fr
Publication of FR2827079A1 publication Critical patent/FR2827079A1/fr
Application granted granted Critical
Publication of FR2827079B1 publication Critical patent/FR2827079B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732Diamonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0108860A 2001-07-04 2001-07-04 Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede Expired - Fee Related FR2827079B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0108860A FR2827079B1 (fr) 2001-07-04 2001-07-04 Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0108860A FR2827079B1 (fr) 2001-07-04 2001-07-04 Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede

Publications (2)

Publication Number Publication Date
FR2827079A1 FR2827079A1 (fr) 2003-01-10
FR2827079B1 true FR2827079B1 (fr) 2004-05-28

Family

ID=8865110

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0108860A Expired - Fee Related FR2827079B1 (fr) 2001-07-04 2001-07-04 Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede

Country Status (1)

Country Link
FR (1) FR2827079B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2056345A1 (fr) * 2007-11-02 2009-05-06 Plansee Se Module d'abaissement de la chaleur pour composants électroniques ou circuits, ainsi que son procédé de fabrication
GB201621690D0 (en) * 2016-12-20 2017-02-01 Element Six Tech Ltd A heat sink comprising synthetic diamond material
CN113725075B (zh) * 2021-07-13 2024-01-09 西安电子科技大学芜湖研究院 一种金刚石混合终端表面电导的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130111A (en) * 1989-08-25 1992-07-14 Wayne State University, Board Of Governors Synthetic diamond articles and their method of manufacture
CA2034440A1 (fr) * 1990-02-13 1991-08-14 Thomas R. Anthony Pieces diamantees par dcpv et methode de fabrication
US5146314A (en) * 1990-03-09 1992-09-08 The University Of Colorado Foundation, Inc. Apparatus for semiconductor circuit chip cooling using a diamond layer
US5785754A (en) * 1994-11-30 1998-07-28 Sumitomo Electric Industries, Ltd. Substrate, semiconductor device, element-mounted device and preparation of substrate
DE19514548C1 (de) * 1995-04-20 1996-10-02 Daimler Benz Ag Verfahren zur Herstellung einer Mikrokühleinrichtung
JP4048579B2 (ja) * 1997-08-28 2008-02-20 住友電気工業株式会社 冷媒流路を含む熱消散体とその製造方法

Also Published As

Publication number Publication date
FR2827079A1 (fr) 2003-01-10

Similar Documents

Publication Publication Date Title
FR2840452B1 (fr) Procede de realisation par epitaxie d'un film de nitrure de gallium separe de son substrat
FR2825834B1 (fr) Procede de fabrication d'un disositif a semi-conducteur
FR2836486B1 (fr) Procede de fabrication d'un element metallique
FR2855909B1 (fr) Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
FR2827706B1 (fr) Procede pour faire fonctionner un composant a semiconducteur
FR2893608B1 (fr) Procede de marquage d'une face d'un substrat de type verrier, un tel substrat et moyen de marquage pour le procede
FR2735040B1 (fr) Procede pour croissance du diamant a partir du graphite
FR2827079B1 (fr) Procede pour la realisation d'un substrat diamant et substrat diamant obtenu par un tel procede
FR2787919B1 (fr) Procede de realisation d'un substrat destine a faire croitre un compose nitrure
EP1424410A4 (fr) Procede de production de cristal semiconducteur
AU2002340501A1 (en) Process for cleaning a substrate
FR2779006B1 (fr) Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif
FR2845078B1 (fr) PROCEDE DE FABRICATION D'UN SUBSTRAT EN NITRURE D'ALUMINIUM AlN
FR2860098B1 (fr) Procede de fabrication d'un dispositif a semiconducteur
GB2382224B (en) Method for producing a substrate arrangement
FR2838927B1 (fr) Support obtenu par moulage et comprenant au moins un ruban auto-agrippant, et procede de fabrication d'un tel support
FR2840297B1 (fr) Procede pour l'elaboration d'un substrat mineral modifie en surface, et substrat obtenu
FR2819631B1 (fr) Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat
FR2832404B1 (fr) Procede d'obtention acceleree d'un compost, et compost obtenu par un tel procede
AU2002362280A1 (en) Method for producing fine chemicals
FR2794569B1 (fr) Procede de fabrication d'un substrat
FR2822735B1 (fr) Procede et dispositif pour la fabrication d'elements de ressorts courbes
FR2792012B1 (fr) Procede de realisation d'un joint de chaussee souple, et joint obtenu par un tel procede
FR2878648B1 (fr) Support semi-conducteur rectangulaire pour la microelectronique et procede de realisation d'un tel support
FR2844918B1 (fr) Procede de fabrication d'electrodes sur un materiau semi- conducteur de type ii-vi ou sur un compose de ce materiau

Legal Events

Date Code Title Description
CA Change of address
TP Transmission of property

Owner name: ALSTOM TRANSPORT TECHNOLOGIES SAS, FR

Effective date: 20150818

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17

CA Change of address

Effective date: 20180103

PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19

ST Notification of lapse

Effective date: 20210305