FR2786318B1 - Procede de fabrication d'une resistance de charge - Google Patents

Procede de fabrication d'une resistance de charge

Info

Publication number
FR2786318B1
FR2786318B1 FR9814714A FR9814714A FR2786318B1 FR 2786318 B1 FR2786318 B1 FR 2786318B1 FR 9814714 A FR9814714 A FR 9814714A FR 9814714 A FR9814714 A FR 9814714A FR 2786318 B1 FR2786318 B1 FR 2786318B1
Authority
FR
France
Prior art keywords
manufacturing
load resistance
load
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9814714A
Other languages
English (en)
Other versions
FR2786318A1 (fr
Inventor
Fu Tai Liou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/187,620 priority Critical patent/US6140198A/en
Priority to GB9824775A priority patent/GB2343787B/en
Priority to JP10321090A priority patent/JP2000150671A/ja
Priority to NL1010614A priority patent/NL1010614C2/nl
Priority to DE19853684A priority patent/DE19853684A1/de
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to FR9814714A priority patent/FR2786318B1/fr
Publication of FR2786318A1 publication Critical patent/FR2786318A1/fr
Application granted granted Critical
Publication of FR2786318B1 publication Critical patent/FR2786318B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Adjustable Resistors (AREA)
FR9814714A 1998-11-06 1998-11-23 Procede de fabrication d'une resistance de charge Expired - Fee Related FR2786318B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US09/187,620 US6140198A (en) 1998-11-06 1998-11-06 Method of fabricating load resistor
GB9824775A GB2343787B (en) 1998-11-06 1998-11-11 Method of fabricating load resistor
JP10321090A JP2000150671A (ja) 1998-11-06 1998-11-11 負荷抵抗体の製造方法
NL1010614A NL1010614C2 (nl) 1998-11-06 1998-11-20 Werkwijze voor het fabriceren van een belastingsweerstand.
DE19853684A DE19853684A1 (de) 1998-11-06 1998-11-20 Verfahren zur Herstellung eines Lastwiderstands
FR9814714A FR2786318B1 (fr) 1998-11-06 1998-11-23 Procede de fabrication d'une resistance de charge

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/187,620 US6140198A (en) 1998-11-06 1998-11-06 Method of fabricating load resistor
GB9824775A GB2343787B (en) 1998-11-06 1998-11-11 Method of fabricating load resistor
JP10321090A JP2000150671A (ja) 1998-11-06 1998-11-11 負荷抵抗体の製造方法
NL1010614A NL1010614C2 (nl) 1998-11-06 1998-11-20 Werkwijze voor het fabriceren van een belastingsweerstand.
DE19853684A DE19853684A1 (de) 1998-11-06 1998-11-20 Verfahren zur Herstellung eines Lastwiderstands
FR9814714A FR2786318B1 (fr) 1998-11-06 1998-11-23 Procede de fabrication d'une resistance de charge

Publications (2)

Publication Number Publication Date
FR2786318A1 FR2786318A1 (fr) 2000-05-26
FR2786318B1 true FR2786318B1 (fr) 2001-02-16

Family

ID=27545103

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9814714A Expired - Fee Related FR2786318B1 (fr) 1998-11-06 1998-11-23 Procede de fabrication d'une resistance de charge

Country Status (6)

Country Link
US (1) US6140198A (fr)
JP (1) JP2000150671A (fr)
DE (1) DE19853684A1 (fr)
FR (1) FR2786318B1 (fr)
GB (1) GB2343787B (fr)
NL (1) NL1010614C2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228735B1 (en) * 1998-12-15 2001-05-08 United Microelectronics Corp. Method of fabricating thin-film transistor
US6586310B1 (en) * 1999-08-27 2003-07-01 Agere Systems Inc. High resistivity film for 4T SRAM
KR100490575B1 (ko) * 2001-08-03 2005-05-17 야마하 가부시키가이샤 귀금속 박막 패턴 형성방법
US6576544B1 (en) * 2001-09-28 2003-06-10 Lsi Logic Corporation Local interconnect
US6939815B2 (en) * 2003-08-28 2005-09-06 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
EP2202802B1 (fr) * 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Circuit de commande et dispositif semi-conducteur
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
DE112010002097T5 (de) * 2009-05-28 2012-04-19 Ulvac, Inc. Sputtertarget und Verfahren zur Verarbeitung elnes Sputtertarget
KR102241249B1 (ko) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저항 소자, 표시 장치, 및 전자기기
KR102370069B1 (ko) 2012-12-25 2022-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
US4663825A (en) * 1984-09-27 1987-05-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JP3024143B2 (ja) * 1989-06-19 2000-03-21 ソニー株式会社 半導体装置の製法
JPH03218666A (ja) * 1989-08-31 1991-09-26 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP3082923B2 (ja) * 1989-12-26 2000-09-04 ソニー株式会社 半導体装置の製法
WO1993003500A1 (fr) * 1991-08-01 1993-02-18 Sierra Semiconductor Corporation Procede de formation d'un element resistant dans un dispositif a semi-conducteur et memoire ram statique obtenue par ce procede
US5622884A (en) * 1996-05-30 1997-04-22 Winbond Electronics Corp. Method for manufacturing a semiconductor memory cell and a polysilicon load resistor of the semiconductor memory cell
US5883417A (en) * 1996-06-27 1999-03-16 Winbond Electronics Corporation Poly-load resistor for SRAM cell
TW380317B (en) * 1998-01-17 2000-01-21 Winbond Electronics Corp Manufacturing method for poly-load resistors of SRAM
US6017790A (en) * 1998-07-06 2000-01-25 United Microelectronics Corp. Method of manufacturing embedded dynamic random access memory

Also Published As

Publication number Publication date
JP2000150671A (ja) 2000-05-30
FR2786318A1 (fr) 2000-05-26
GB9824775D0 (en) 1999-01-06
GB2343787A (en) 2000-05-17
US6140198A (en) 2000-10-31
DE19853684A1 (de) 2000-05-25
NL1010614C2 (nl) 2000-05-23
GB2343787B (en) 2001-01-17

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Legal Events

Date Code Title Description
ST Notification of lapse