FR2782842B1 - Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif - Google Patents

Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif

Info

Publication number
FR2782842B1
FR2782842B1 FR9810686A FR9810686A FR2782842B1 FR 2782842 B1 FR2782842 B1 FR 2782842B1 FR 9810686 A FR9810686 A FR 9810686A FR 9810686 A FR9810686 A FR 9810686A FR 2782842 B1 FR2782842 B1 FR 2782842B1
Authority
FR
France
Prior art keywords
insole
regions
mutually
manufacturing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9810686A
Other languages
English (en)
Other versions
FR2782842A1 (fr
Inventor
Benoit Giffard
Pierre Gidon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9810686A priority Critical patent/FR2782842B1/fr
Priority to EP99939493A priority patent/EP1114453A1/fr
Priority to PCT/FR1999/002032 priority patent/WO2000011711A1/fr
Publication of FR2782842A1 publication Critical patent/FR2782842A1/fr
Priority to US10/313,236 priority patent/US20030064568A1/en
Application granted granted Critical
Publication of FR2782842B1 publication Critical patent/FR2782842B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76286—Lateral isolation by refilling of trenches with polycristalline material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
FR9810686A 1998-08-25 1998-08-25 Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif Expired - Fee Related FR2782842B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9810686A FR2782842B1 (fr) 1998-08-25 1998-08-25 Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif
EP99939493A EP1114453A1 (fr) 1998-08-25 1999-08-24 Dispositif comportant des composants electroniques dans des regions mutuellement isolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif
PCT/FR1999/002032 WO2000011711A1 (fr) 1998-08-25 1999-08-24 Dispositif comportant des composants electroniques dans des regions mutuellement isolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif
US10/313,236 US20030064568A1 (en) 1998-08-25 2002-12-05 Device comprising electronic components in regions of a layer of semiconducting material insulated from each other and manufacturing process for such a device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9810686A FR2782842B1 (fr) 1998-08-25 1998-08-25 Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif

Publications (2)

Publication Number Publication Date
FR2782842A1 FR2782842A1 (fr) 2000-03-03
FR2782842B1 true FR2782842B1 (fr) 2003-09-05

Family

ID=9529863

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9810686A Expired - Fee Related FR2782842B1 (fr) 1998-08-25 1998-08-25 Dispositif comportant des composants electroniques dans des regions mutuellement insolees d'une couche de materiau semi-conducteur et procede de fabrication d'un tel dispositif

Country Status (3)

Country Link
EP (1) EP1114453A1 (fr)
FR (1) FR2782842B1 (fr)
WO (1) WO2000011711A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3046247B1 (fr) * 2015-12-28 2018-06-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre pour detection d’un defaut d’isolation avec une armature conductrice

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423388A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Semiconductor integrated-circuit device and its manufacture
GB2107926A (en) * 1981-10-13 1983-05-05 Monolithic Memories Inc Semiconductor device and method of manufacture
JPS58138049A (ja) * 1982-02-12 1983-08-16 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH04123456A (ja) * 1990-09-14 1992-04-23 Hitachi Ltd 半導体装置及びその製造方法
JP3180599B2 (ja) * 1995-01-24 2001-06-25 日本電気株式会社 半導体装置およびその製造方法
US5899727A (en) * 1996-05-02 1999-05-04 Advanced Micro Devices, Inc. Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization

Also Published As

Publication number Publication date
WO2000011711A1 (fr) 2000-03-02
EP1114453A1 (fr) 2001-07-11
FR2782842A1 (fr) 2000-03-03

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Date Code Title Description
ST Notification of lapse