FR2773418B1 - Procede de fabrication d'un conducteur de mot - Google Patents

Procede de fabrication d'un conducteur de mot

Info

Publication number
FR2773418B1
FR2773418B1 FR9800082A FR9800082A FR2773418B1 FR 2773418 B1 FR2773418 B1 FR 2773418B1 FR 9800082 A FR9800082 A FR 9800082A FR 9800082 A FR9800082 A FR 9800082A FR 2773418 B1 FR2773418 B1 FR 2773418B1
Authority
FR
France
Prior art keywords
manufacturing
word conductor
conductor
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9800082A
Other languages
English (en)
Other versions
FR2773418A1 (fr
Inventor
Der Yuan Wu
Yi Chung Sheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085111565A external-priority patent/TW316326B/zh
Priority to GB9624435A priority Critical patent/GB2319658B/en
Priority to DE19648733A priority patent/DE19648733C2/de
Priority to JP9011965A priority patent/JPH10107034A/ja
Priority to NL1007868A priority patent/NL1007868C2/nl
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to FR9800082A priority patent/FR2773418B1/fr
Publication of FR2773418A1 publication Critical patent/FR2773418A1/fr
Application granted granted Critical
Publication of FR2773418B1 publication Critical patent/FR2773418B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
FR9800082A 1996-09-21 1998-01-07 Procede de fabrication d'un conducteur de mot Expired - Fee Related FR2773418B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9624435A GB2319658B (en) 1996-09-21 1996-11-25 Method of fabricating a word line
DE19648733A DE19648733C2 (de) 1996-09-21 1996-11-25 Verfahren zur Herstellung von Wortzeilen in dynamischen Schreib-Lesespeichern
JP9011965A JPH10107034A (ja) 1996-09-21 1997-01-07 ワードラインの製造方法
NL1007868A NL1007868C2 (nl) 1996-09-21 1997-12-23 Werkwijze voor het vervaardigen van een woordregel, en hiermee verkregen geïntegreerde halfgeleiderschakeling.
FR9800082A FR2773418B1 (fr) 1996-09-21 1998-01-07 Procede de fabrication d'un conducteur de mot

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW085111565A TW316326B (en) 1996-09-21 1996-09-21 Manufacturing method of word line
GB9624435A GB2319658B (en) 1996-09-21 1996-11-25 Method of fabricating a word line
NL1007868A NL1007868C2 (nl) 1996-09-21 1997-12-23 Werkwijze voor het vervaardigen van een woordregel, en hiermee verkregen geïntegreerde halfgeleiderschakeling.
FR9800082A FR2773418B1 (fr) 1996-09-21 1998-01-07 Procede de fabrication d'un conducteur de mot

Publications (2)

Publication Number Publication Date
FR2773418A1 FR2773418A1 (fr) 1999-07-09
FR2773418B1 true FR2773418B1 (fr) 2002-12-06

Family

ID=27447012

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9800082A Expired - Fee Related FR2773418B1 (fr) 1996-09-21 1998-01-07 Procede de fabrication d'un conducteur de mot

Country Status (5)

Country Link
JP (1) JPH10107034A (fr)
DE (1) DE19648733C2 (fr)
FR (1) FR2773418B1 (fr)
GB (1) GB2319658B (fr)
NL (1) NL1007868C2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290781B1 (ko) * 1998-06-30 2001-06-01 박종섭 반도체 소자 및 그 제조방법
JP2000294775A (ja) * 1999-04-07 2000-10-20 Sony Corp 半導体装置の製造方法
US7243027B2 (en) 2005-07-07 2007-07-10 Schlumberger Technology Corporation Method and system to generate deliverable files
KR100771538B1 (ko) 2005-12-14 2007-10-31 주식회사 하이닉스반도체 낮은 저항의 텅스텐-폴리사이드 게이트 및 리세스채널을갖는 반도체소자의 제조방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
US4389257A (en) * 1981-07-30 1983-06-21 International Business Machines Corporation Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes
US4851295A (en) * 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
JPS61263243A (ja) * 1985-05-17 1986-11-21 Matsushita Electronics Corp 高融点金属シリサイド配線の製造方法
JPS61276373A (ja) * 1985-05-31 1986-12-06 Nippon Texas Instr Kk 半導体装置の製造工程
JPS61296764A (ja) * 1985-06-25 1986-12-27 Mitsubishi Electric Corp 金属電極配線膜を有する半導体装置
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
JPS6376479A (ja) * 1986-09-19 1988-04-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4737474A (en) * 1986-11-17 1988-04-12 Spectrum Cvd, Inc. Silicide to silicon bonding process
JPS63133672A (ja) * 1986-11-26 1988-06-06 Nec Corp 半導体装置
JPS63227058A (ja) * 1987-03-17 1988-09-21 Matsushita Electronics Corp 高融点金属シリサイドゲ−トｍｏｓ電界効果トランジスタ
JPS63272028A (ja) * 1987-04-30 1988-11-09 Oki Electric Ind Co Ltd 高融点金属シリサイド膜の形成方法
US4774201A (en) * 1988-01-07 1988-09-27 Intel Corporation Tungsten-silicide reoxidation technique using a CVD oxide cap
JPH0273669A (ja) * 1988-09-09 1990-03-13 Sony Corp 半導体装置
KR930004295B1 (ko) * 1988-12-24 1993-05-22 삼성전자 주식회사 Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법
US4981442A (en) * 1989-03-23 1991-01-01 Nippon Acchakutanshi Seizo Kabushiki Kaisha Electrical harness
US4978637A (en) * 1989-05-31 1990-12-18 Sgs-Thomson Microelectronics, Inc. Local interconnect process for integrated circuits
KR920015622A (ko) * 1991-01-31 1992-08-27 원본미기재 집적 회로의 제조방법
US5591674A (en) * 1991-12-30 1997-01-07 Lucent Technologies Inc. Integrated circuit with silicon contact to silicide
JP3067433B2 (ja) * 1992-12-04 2000-07-17 キヤノン株式会社 半導体装置の製造方法
JPH06334453A (ja) * 1993-05-25 1994-12-02 Canon Inc 増幅装置
US5635765A (en) * 1996-02-26 1997-06-03 Cypress Semiconductor Corporation Multi-layer gate structure

Also Published As

Publication number Publication date
GB2319658A (en) 1998-05-27
GB9624435D0 (en) 1997-01-15
DE19648733A1 (de) 1998-04-16
NL1007868C2 (nl) 1999-06-24
FR2773418A1 (fr) 1999-07-09
GB2319658B (en) 2001-08-22
JPH10107034A (ja) 1998-04-24
DE19648733C2 (de) 2002-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140930