FR2764120B1 - PHOTODETECTEUR SiGe A RENDEMENT ELEVE - Google Patents

PHOTODETECTEUR SiGe A RENDEMENT ELEVE

Info

Publication number
FR2764120B1
FR2764120B1 FR9803730A FR9803730A FR2764120B1 FR 2764120 B1 FR2764120 B1 FR 2764120B1 FR 9803730 A FR9803730 A FR 9803730A FR 9803730 A FR9803730 A FR 9803730A FR 2764120 B1 FR2764120 B1 FR 2764120B1
Authority
FR
France
Prior art keywords
high yield
sige photodetector
sige
photodetector
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9803730A
Other languages
English (en)
Other versions
FR2764120A1 (fr
Inventor
Hartmut Presting
Ulf Konig
Andreas Gruhle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daimler Benz AG
Original Assignee
Daimler Benz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimler Benz AG filed Critical Daimler Benz AG
Publication of FR2764120A1 publication Critical patent/FR2764120A1/fr
Application granted granted Critical
Publication of FR2764120B1 publication Critical patent/FR2764120B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
FR9803730A 1997-04-05 1998-03-26 PHOTODETECTEUR SiGe A RENDEMENT ELEVE Expired - Fee Related FR2764120B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19714054A DE19714054A1 (de) 1997-04-05 1997-04-05 SiGe-Photodetektor mit hohem Wirkungsgrad

Publications (2)

Publication Number Publication Date
FR2764120A1 FR2764120A1 (fr) 1998-12-04
FR2764120B1 true FR2764120B1 (fr) 1999-10-15

Family

ID=7825514

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9803730A Expired - Fee Related FR2764120B1 (fr) 1997-04-05 1998-03-26 PHOTODETECTEUR SiGe A RENDEMENT ELEVE

Country Status (3)

Country Link
US (1) US6043517A (fr)
DE (1) DE19714054A1 (fr)
FR (1) FR2764120B1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19723177A1 (de) 1997-06-03 1998-12-10 Daimler Benz Ag Spannungsgesteuerter wellenlängenselektiver Photodetektor
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
DE10139509A1 (de) * 2000-12-08 2002-06-27 Daimler Chrysler Ag Silizium Germanium Solarzelle mit hohem Wirkungsgrad
JP2004533715A (ja) * 2001-03-30 2004-11-04 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 低温Ｓｉ及びＳｉＧｅエピタキシーにおけるｎ−型オートドーピングの抑制
US6980748B2 (en) * 2001-08-30 2005-12-27 International Business Machines Corporation SiGe or germanium flip chip optical receiver
GB0216069D0 (en) 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
US6646318B1 (en) * 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
TWI250659B (en) * 2003-07-31 2006-03-01 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor-body with an integrated filter-layer
US7095006B2 (en) * 2003-12-16 2006-08-22 International Business Machines Corporation Photodetector with hetero-structure using lateral growth
KR100624415B1 (ko) * 2003-12-17 2006-09-18 삼성전자주식회사 광디바이스 및 그 제조방법
US7723754B2 (en) * 2004-07-28 2010-05-25 Massachusetts Institute Of Technology Ge photodetectors
US7247546B2 (en) * 2004-08-05 2007-07-24 International Business Machines Corporation Method of forming strained silicon materials with improved thermal conductivity
US7329465B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company Optical films incorporating cyclic olefin copolymers
JP4650224B2 (ja) * 2004-11-19 2011-03-16 日亜化学工業株式会社 電界効果トランジスタ
DE102005013640A1 (de) * 2005-03-24 2006-10-05 Atmel Germany Gmbh Halbleiter-Photodetektor und Verfahren zum Herstellen desselben
GB0519599D0 (en) * 2005-09-26 2005-11-02 Imp College Innovations Ltd Photovoltaic cells
US20080105940A1 (en) * 2006-06-15 2008-05-08 Sioptical, Inc. SOI-based inverse nanotaper optical detector
TWI346393B (en) * 2007-07-05 2011-08-01 Univ Nat Taiwan A method for forming a p-n junction photodiode and an apparatus for the same
US8941191B2 (en) 2010-07-30 2015-01-27 Cornell University Method of actuating an internally transduced pn-diode-based ultra high frequency micromechanical resonator
DE112014002145T5 (de) * 2013-04-26 2015-12-31 Hamamatsu Photonics K.K. Lichtdetektor
DE102015109044B4 (de) * 2015-06-09 2020-10-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauteil zum Detektieren elektromagnetischer Strahlung
CN106531822B (zh) * 2016-11-29 2017-12-19 电子科技大学 一种光电探测器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740029B2 (ja) * 1987-12-23 1998-04-15 ブリテツシユ・テレコミユニケイシヨンズ・パブリツク・リミテツド・カンパニー 半導体ヘテロ構造
EP0540235A3 (en) * 1991-10-30 1993-09-29 American Telephone And Telegraph Company Article comprising a quantum well infrared photodetector
JP3236624B2 (ja) * 1994-10-30 2001-12-10 ボーム，マルクス 光感応性電子素子、その素子を使用したカラーセンサー、及びその素子の製造方法
JP2833588B2 (ja) * 1996-07-30 1998-12-09 日本電気株式会社 フォトディテクタおよびその製造方法

Also Published As

Publication number Publication date
US6043517A (en) 2000-03-28
DE19714054A1 (de) 1998-10-08
FR2764120A1 (fr) 1998-12-04

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse