FR2753576B1 - Procede de fabrication d'un laser semiconducteur a emission de surface - Google Patents

Procede de fabrication d'un laser semiconducteur a emission de surface

Info

Publication number
FR2753576B1
FR2753576B1 FR9611198A FR9611198A FR2753576B1 FR 2753576 B1 FR2753576 B1 FR 2753576B1 FR 9611198 A FR9611198 A FR 9611198A FR 9611198 A FR9611198 A FR 9611198A FR 2753576 B1 FR2753576 B1 FR 2753576B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor laser
surface emitting
emitting semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9611198A
Other languages
English (en)
Other versions
FR2753576A1 (fr
Inventor
Leon Goldstein
Francois Brillouet
Catherine Fortin
Paul Salet
Joel Jacquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Priority to FR9611198A priority Critical patent/FR2753576B1/fr
Priority to FR9703413A priority patent/FR2753577B1/fr
Priority to DE69719268T priority patent/DE69719268T2/de
Priority to AT97402081T priority patent/ATE233443T1/de
Priority to EP97402081A priority patent/EP0829934B1/fr
Priority to AU37457/97A priority patent/AU3745797A/en
Priority to US08/928,647 priority patent/US6046065A/en
Priority to JP9249069A priority patent/JPH10107389A/ja
Publication of FR2753576A1 publication Critical patent/FR2753576A1/fr
Application granted granted Critical
Publication of FR2753576B1 publication Critical patent/FR2753576B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR9611198A 1996-09-13 1996-09-13 Procede de fabrication d'un laser semiconducteur a emission de surface Expired - Fee Related FR2753576B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR9611198A FR2753576B1 (fr) 1996-09-13 1996-09-13 Procede de fabrication d'un laser semiconducteur a emission de surface
FR9703413A FR2753577B1 (fr) 1996-09-13 1997-03-20 Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
AT97402081T ATE233443T1 (de) 1996-09-13 1997-09-08 Herstellungsverfahren einer optoelektrischen halbleitervorrichtung, und vorrichtung oder matrix von vorrichtungen hergestellt unter verwendung dieses verfahrens
EP97402081A EP0829934B1 (fr) 1996-09-13 1997-09-08 Procédé de fabrication d'un composant optoélectronique à semiconducteur et composant ou matrice de composants fabriqués selon ce procédé
DE69719268T DE69719268T2 (de) 1996-09-13 1997-09-08 Herstellungsverfahren einer optoelektrischen Halbleitervorrichtung, und Vorrichtung oder Matrix von Vorrichtungen hergestellt unter Verwendung dieses Verfahrens
AU37457/97A AU3745797A (en) 1996-09-13 1997-09-10 Process for fabricating a semiconductor opto-electronic component
US08/928,647 US6046065A (en) 1996-09-13 1997-09-12 Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process
JP9249069A JPH10107389A (ja) 1996-09-13 1997-09-12 半導体光電子素子の製造方法およびこの方法によって製造される素子および素子マトリックス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9611198A FR2753576B1 (fr) 1996-09-13 1996-09-13 Procede de fabrication d'un laser semiconducteur a emission de surface

Publications (2)

Publication Number Publication Date
FR2753576A1 FR2753576A1 (fr) 1998-03-20
FR2753576B1 true FR2753576B1 (fr) 1998-11-13

Family

ID=9495720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9611198A Expired - Fee Related FR2753576B1 (fr) 1996-09-13 1996-09-13 Procede de fabrication d'un laser semiconducteur a emission de surface

Country Status (1)

Country Link
FR (1) FR2753576B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179798A (ja) * 1988-01-07 1989-07-17 Nec Corp 半導体結晶成長方法
JPH01179797A (ja) * 1988-01-07 1989-07-17 Nec Corp 半導体結晶成長方法
JP2871288B2 (ja) * 1992-04-10 1999-03-17 日本電気株式会社 面型光半導体素子およびその製造方法

Also Published As

Publication number Publication date
FR2753576A1 (fr) 1998-03-20

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Legal Events

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CD Change of name or company name
ST Notification of lapse