FR2674371B1 - Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration. - Google Patents
Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration.Info
- Publication number
- FR2674371B1 FR2674371B1 FR9202279A FR9202279A FR2674371B1 FR 2674371 B1 FR2674371 B1 FR 2674371B1 FR 9202279 A FR9202279 A FR 9202279A FR 9202279 A FR9202279 A FR 9202279A FR 2674371 B1 FR2674371 B1 FR 2674371B1
- Authority
- FR
- France
- Prior art keywords
- integration
- circuits
- high density
- conductive structures
- establishing contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000010354 integration Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4109536 | 1991-03-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2674371A1 FR2674371A1 (fr) | 1992-09-25 |
FR2674371B1 true FR2674371B1 (fr) | 1995-06-02 |
Family
ID=6428028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9202279A Expired - Fee Related FR2674371B1 (fr) | 1991-03-22 | 1992-02-27 | Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5336636A (fr) |
DE (1) | DE4203804C2 (fr) |
FR (1) | FR2674371B1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5630839A (en) * | 1991-10-22 | 1997-05-20 | Pi Medical Corporation | Multi-electrode cochlear implant and method of manufacturing the same |
US5843363A (en) * | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
US5800500A (en) * | 1995-08-18 | 1998-09-01 | Pi Medical Corporation | Cochlear implant with shape memory material and method for implanting the same |
US5998759A (en) * | 1996-12-24 | 1999-12-07 | General Scanning, Inc. | Laser processing |
US6338973B1 (en) * | 1997-08-18 | 2002-01-15 | Texas Instruments Incorporated | Semiconductor device and method of fabrication |
US6300590B1 (en) | 1998-12-16 | 2001-10-09 | General Scanning, Inc. | Laser processing |
US6605526B1 (en) * | 2000-03-16 | 2003-08-12 | International Business Machines Corporation | Wirebond passivation pad connection using heated capillary |
US20020190379A1 (en) * | 2001-03-28 | 2002-12-19 | Applied Materials, Inc. | W-CVD with fluorine-free tungsten nucleation |
US7253901B2 (en) * | 2002-01-23 | 2007-08-07 | Kla-Tencor Technologies Corporation | Laser-based cleaning device for film analysis tool |
US7048864B2 (en) * | 2003-03-24 | 2006-05-23 | King Technology Inc. | Dendrimer fluid purification system and method |
US9343310B1 (en) * | 2012-06-27 | 2016-05-17 | Nathaniel R Quick | Methods of forming conductors and semiconductors on a substrate |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6175529A (ja) * | 1984-09-21 | 1986-04-17 | Toshiba Corp | ドライエツチング方法及び装置 |
JPH0691014B2 (ja) * | 1984-11-14 | 1994-11-14 | 株式会社日立製作所 | 半導体装置の製造装置 |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
FR2620737B1 (fr) * | 1987-09-17 | 1993-04-16 | France Etat | Procede de gravure d'une couche d'oxyde de silicium |
US4938996A (en) * | 1988-04-12 | 1990-07-03 | Ziv Alan R | Via filling by selective laser chemical vapor deposition |
-
1992
- 1992-02-10 DE DE4203804A patent/DE4203804C2/de not_active Expired - Fee Related
- 1992-02-27 FR FR9202279A patent/FR2674371B1/fr not_active Expired - Fee Related
- 1992-03-17 US US07/852,951 patent/US5336636A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE4203804C2 (de) | 1994-02-10 |
FR2674371A1 (fr) | 1992-09-25 |
US5336636A (en) | 1994-08-09 |
DE4203804A1 (de) | 1992-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |