FR2674371B1 - Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration. - Google Patents

Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration.

Info

Publication number
FR2674371B1
FR2674371B1 FR9202279A FR9202279A FR2674371B1 FR 2674371 B1 FR2674371 B1 FR 2674371B1 FR 9202279 A FR9202279 A FR 9202279A FR 9202279 A FR9202279 A FR 9202279A FR 2674371 B1 FR2674371 B1 FR 2674371B1
Authority
FR
France
Prior art keywords
integration
circuits
high density
conductive structures
establishing contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9202279A
Other languages
English (en)
Other versions
FR2674371A1 (fr
Inventor
Christian Burmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2674371A1 publication Critical patent/FR2674371A1/fr
Application granted granted Critical
Publication of FR2674371B1 publication Critical patent/FR2674371B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
FR9202279A 1991-03-22 1992-02-27 Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration. Expired - Fee Related FR2674371B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4109536 1991-03-22

Publications (2)

Publication Number Publication Date
FR2674371A1 FR2674371A1 (fr) 1992-09-25
FR2674371B1 true FR2674371B1 (fr) 1995-06-02

Family

ID=6428028

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9202279A Expired - Fee Related FR2674371B1 (fr) 1991-03-22 1992-02-27 Procede pour etablir des contacts sur des structures conductrices dans des circuits a tres haute densite d'integration.

Country Status (3)

Country Link
US (1) US5336636A (fr)
DE (1) DE4203804C2 (fr)
FR (1) FR2674371B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5630839A (en) * 1991-10-22 1997-05-20 Pi Medical Corporation Multi-electrode cochlear implant and method of manufacturing the same
US5843363A (en) * 1995-03-31 1998-12-01 Siemens Aktiengesellschaft Ablation patterning of multi-layered structures
US5800500A (en) * 1995-08-18 1998-09-01 Pi Medical Corporation Cochlear implant with shape memory material and method for implanting the same
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US6338973B1 (en) * 1997-08-18 2002-01-15 Texas Instruments Incorporated Semiconductor device and method of fabrication
US6300590B1 (en) 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
US6605526B1 (en) * 2000-03-16 2003-08-12 International Business Machines Corporation Wirebond passivation pad connection using heated capillary
US20020190379A1 (en) * 2001-03-28 2002-12-19 Applied Materials, Inc. W-CVD with fluorine-free tungsten nucleation
US7253901B2 (en) * 2002-01-23 2007-08-07 Kla-Tencor Technologies Corporation Laser-based cleaning device for film analysis tool
US7048864B2 (en) * 2003-03-24 2006-05-23 King Technology Inc. Dendrimer fluid purification system and method
US9343310B1 (en) * 2012-06-27 2016-05-17 Nathaniel R Quick Methods of forming conductors and semiconductors on a substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175529A (ja) * 1984-09-21 1986-04-17 Toshiba Corp ドライエツチング方法及び装置
JPH0691014B2 (ja) * 1984-11-14 1994-11-14 株式会社日立製作所 半導体装置の製造装置
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
FR2620737B1 (fr) * 1987-09-17 1993-04-16 France Etat Procede de gravure d'une couche d'oxyde de silicium
US4938996A (en) * 1988-04-12 1990-07-03 Ziv Alan R Via filling by selective laser chemical vapor deposition

Also Published As

Publication number Publication date
DE4203804C2 (de) 1994-02-10
FR2674371A1 (fr) 1992-09-25
US5336636A (en) 1994-08-09
DE4203804A1 (de) 1992-09-24

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Legal Events

Date Code Title Description
ST Notification of lapse