FR2662302B1 - METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE. - Google Patents

METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE.

Info

Publication number
FR2662302B1
FR2662302B1 FR909011611A FR9011611A FR2662302B1 FR 2662302 B1 FR2662302 B1 FR 2662302B1 FR 909011611 A FR909011611 A FR 909011611A FR 9011611 A FR9011611 A FR 9011611A FR 2662302 B1 FR2662302 B1 FR 2662302B1
Authority
FR
France
Prior art keywords
capacitor
manufacturing
memory device
semiconductor memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR909011611A
Other languages
French (fr)
Other versions
FR2662302A1 (en
Inventor
Kyung-Hun Kim
Seong-Tae Kim
Hyeong-Kyu Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2662302A1 publication Critical patent/FR2662302A1/en
Application granted granted Critical
Publication of FR2662302B1 publication Critical patent/FR2662302B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
FR909011611A 1990-05-21 1990-09-20 METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE. Expired - Lifetime FR2662302B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900007268A KR930000718B1 (en) 1990-05-21 1990-05-21 Method for fabricating semiconductor device

Publications (2)

Publication Number Publication Date
FR2662302A1 FR2662302A1 (en) 1991-11-22
FR2662302B1 true FR2662302B1 (en) 1992-08-14

Family

ID=19299238

Family Applications (1)

Application Number Title Priority Date Filing Date
FR909011611A Expired - Lifetime FR2662302B1 (en) 1990-05-21 1990-09-20 METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR MEMORY DEVICE.

Country Status (6)

Country Link
JP (1) JPH0724285B2 (en)
KR (1) KR930000718B1 (en)
DE (1) DE4031414A1 (en)
FR (1) FR2662302B1 (en)
GB (1) GB2244375B (en)
IT (1) IT1243103B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930006732B1 (en) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 Semiconductor substrate having the structure assembly varied and method of the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120070A (en) * 1985-11-20 1987-06-01 Toshiba Corp Semiconductor memory
JPH0736437B2 (en) * 1985-11-29 1995-04-19 株式会社日立製作所 Method of manufacturing semiconductor memory
JP2569048B2 (en) * 1987-05-27 1997-01-08 株式会社日立製作所 Method for manufacturing semiconductor memory
EP0295709B1 (en) * 1987-06-17 1998-03-11 Fujitsu Limited Method of producing a dynamic random access memory device
JPH01154551A (en) * 1987-12-11 1989-06-16 Oki Electric Ind Co Ltd Semiconductor storage integrated circuit device and manufacture thereof
KR910010167B1 (en) * 1988-06-07 1991-12-17 삼성전자 주식회사 Stack capacitor dram cell and its manufacturing method
US5116776A (en) * 1989-11-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method of making a stacked copacitor for dram cell
KR920010204B1 (en) * 1989-12-02 1992-11-21 삼성전자 주식회사 Ulsi dram cell and method for manufacturing of the same

Also Published As

Publication number Publication date
IT1243103B (en) 1994-05-24
KR930000718B1 (en) 1993-01-30
IT9021550A1 (en) 1992-03-24
JPH0424961A (en) 1992-01-28
JPH0724285B2 (en) 1995-03-15
GB2244375B (en) 1994-06-15
GB2244375A (en) 1991-11-27
GB9020502D0 (en) 1990-10-31
IT9021550A0 (en) 1990-09-24
KR910020901A (en) 1991-12-20
DE4031414A1 (en) 1991-11-28
FR2662302A1 (en) 1991-11-22

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