FR2637126A1 - Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication - Google Patents

Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication

Info

Publication number
FR2637126A1
FR2637126A1 FR8812470A FR8812470A FR2637126A1 FR 2637126 A1 FR2637126 A1 FR 2637126A1 FR 8812470 A FR8812470 A FR 8812470A FR 8812470 A FR8812470 A FR 8812470A FR 2637126 A1 FR2637126 A1 FR 2637126A1
Authority
FR
France
Prior art keywords
triode
diode
flat
integrated
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8812470A
Other languages
English (en)
Other versions
FR2637126B1 (fr
Inventor
Jean Olivier
Didier Pribat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8812470A priority Critical patent/FR2637126B1/fr
Priority to EP89402538A priority patent/EP0362017A1/fr
Priority to JP1247840A priority patent/JPH02142041A/ja
Priority to US07/410,850 priority patent/US4986787A/en
Publication of FR2637126A1 publication Critical patent/FR2637126A1/fr
Application granted granted Critical
Publication of FR2637126B1 publication Critical patent/FR2637126B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/308—Semiconductor cathodes, e.g. having PN junction layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Le microcomposant de l'invention comporte un substrat Si de type, 2 oxydé en surface 4, au moins une cathode à surface césiée en Si monocristallin de type n 7 étant formée sur ce substrat. Elle est entourée de Si de type p monocristallin 6. Une couche de SiO2 8 formée sur le Si de type p comporte une ouverture 9 face à la cathode. Cette ouverture est autoscellée sous vide par le matériau d'anode 11.
FR8812470A 1988-09-23 1988-09-23 Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication Expired - Lifetime FR2637126B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8812470A FR2637126B1 (fr) 1988-09-23 1988-09-23 Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
EP89402538A EP0362017A1 (fr) 1988-09-23 1989-09-15 Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et intégré, et procédé de fabrication
JP1247840A JPH02142041A (ja) 1988-09-23 1989-09-22 ダイオード、トライオード又は平らで集積された陰極線ルミネセンス表示装置のような要素、及びその作製方法
US07/410,850 US4986787A (en) 1988-09-23 1989-09-22 Method of making an integrated component of the cold cathode type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8812470A FR2637126B1 (fr) 1988-09-23 1988-09-23 Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2637126A1 true FR2637126A1 (fr) 1990-03-30
FR2637126B1 FR2637126B1 (fr) 1992-05-07

Family

ID=9370334

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8812470A Expired - Lifetime FR2637126B1 (fr) 1988-09-23 1988-09-23 Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication

Country Status (4)

Country Link
US (1) US4986787A (fr)
EP (1) EP0362017A1 (fr)
JP (1) JPH02142041A (fr)
FR (1) FR2637126B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110757A (en) * 1990-12-19 1992-05-05 North American Philips Corp. Formation of composite monosilicon/polysilicon layer using reduced-temperature two-step silicon deposition
DE4041276C1 (fr) * 1990-12-21 1992-02-27 Siemens Ag, 8000 Muenchen, De
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5453659A (en) * 1994-06-10 1995-09-26 Texas Instruments Incorporated Anode plate for flat panel display having integrated getter
JP3423511B2 (ja) * 1994-12-14 2003-07-07 キヤノン株式会社 画像形成装置及びゲッタ材の活性化方法
KR100404171B1 (ko) * 1996-12-27 2004-03-18 엘지전자 주식회사 엔이에이 성질을 갖는 실리콘 표면의 패턴 형성방법
FR2780808B1 (fr) 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
FR2821982B1 (fr) * 2001-03-09 2004-05-07 Commissariat Energie Atomique Ecran plat a emission electronique et a dispositif integre de commande d'anode
US20040005927A1 (en) * 2002-04-22 2004-01-08 Bonilla Victor G. Facility for remote computer controlled racing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
DE3224218A1 (de) * 1981-06-29 1983-01-13 Rockwell International Corp., 90245 El Segundo, Calif. Silicium-vakuum-elektronenvorrichtung
JPS6310428A (ja) * 1986-07-01 1988-01-18 Canon Inc 冷陰極装置
JPS63187535A (ja) * 1987-01-28 1988-08-03 Canon Inc 冷陰極真空管
EP0278405A2 (fr) * 1987-02-06 1988-08-17 Canon Kabushiki Kaisha Elément émetteur d'électrons et son procédé de fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
DE3224218A1 (de) * 1981-06-29 1983-01-13 Rockwell International Corp., 90245 El Segundo, Calif. Silicium-vakuum-elektronenvorrichtung
JPS6310428A (ja) * 1986-07-01 1988-01-18 Canon Inc 冷陰極装置
JPS63187535A (ja) * 1987-01-28 1988-08-03 Canon Inc 冷陰極真空管
EP0278405A2 (fr) * 1987-02-06 1988-08-17 Canon Kabushiki Kaisha Elément émetteur d'électrons et son procédé de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 12, no. 215 (E-623)[3062], 18 juin 1988; & JP-A-63 10 428 (CANON INC.) 18-01-1988 *

Also Published As

Publication number Publication date
EP0362017A1 (fr) 1990-04-04
FR2637126B1 (fr) 1992-05-07
US4986787A (en) 1991-01-22
JPH02142041A (ja) 1990-05-31

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Legal Events

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