FR2620269A1 - Procede pour texturer une surface de silicium - Google Patents

Procede pour texturer une surface de silicium Download PDF

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Publication number
FR2620269A1
FR2620269A1 FR8811700A FR8811700A FR2620269A1 FR 2620269 A1 FR2620269 A1 FR 2620269A1 FR 8811700 A FR8811700 A FR 8811700A FR 8811700 A FR8811700 A FR 8811700A FR 2620269 A1 FR2620269 A1 FR 2620269A1
Authority
FR
France
Prior art keywords
etching
crystal
photoresist
silicon
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8811700A
Other languages
English (en)
French (fr)
Other versions
FR2620269B1 (enrdf_load_stackoverflow
Inventor
Daniel Leo Meier
James Bernard Mcnally
Leonard Earl Hohn
Jeong-Mo Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2620269A1 publication Critical patent/FR2620269A1/fr
Application granted granted Critical
Publication of FR2620269B1 publication Critical patent/FR2620269B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
FR8811700A 1987-09-08 1988-09-07 Procede pour texturer une surface de silicium Granted FR2620269A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9418487A 1987-09-08 1987-09-08

Publications (2)

Publication Number Publication Date
FR2620269A1 true FR2620269A1 (fr) 1989-03-10
FR2620269B1 FR2620269B1 (enrdf_load_stackoverflow) 1994-08-19

Family

ID=22243663

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8811700A Granted FR2620269A1 (fr) 1987-09-08 1988-09-07 Procede pour texturer une surface de silicium

Country Status (5)

Country Link
JP (1) JP2925146B2 (enrdf_load_stackoverflow)
KR (1) KR0139919B1 (enrdf_load_stackoverflow)
AU (1) AU602114B2 (enrdf_load_stackoverflow)
FR (1) FR2620269A1 (enrdf_load_stackoverflow)
IT (1) IT1226626B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU710841B2 (en) * 1995-08-31 1999-09-30 C3, Inc. Silicon carbide gemstones
US6638788B2 (en) * 2001-02-07 2003-10-28 Ebara Corporation Solar cell and method of manufacturing same
WO2011134999A1 (fr) * 2010-04-28 2011-11-03 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell
DE69231616T2 (de) * 1991-10-08 2001-06-07 Unisearch Ltd., Kensington Verbessertes optisches design für photozelle.
CN103137716B (zh) * 2011-11-25 2016-04-27 清华大学 太阳能电池、太阳能电池组及其制备方法
TWI506801B (zh) 2011-12-09 2015-11-01 Hon Hai Prec Ind Co Ltd 太陽能電池組
JP6082237B2 (ja) 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN106990461B (zh) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 一种直角顶角硅阶梯光栅及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980508A (en) * 1973-10-02 1976-09-14 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor device
FR2472840A1 (fr) * 1979-12-27 1981-07-03 Solarex Corp Cellule solaire structuree et son procede de fabrication
EP0224022A2 (en) * 1985-10-31 1987-06-03 International Business Machines Corporation Etchant and method for etching doped silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5166777A (en) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Shirikontoranjisuta
JPS59139003A (ja) * 1983-01-31 1984-08-09 Sony Corp マイクロプリズム用原板の製造方法
JPS62105485A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体基体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980508A (en) * 1973-10-02 1976-09-14 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor device
FR2472840A1 (fr) * 1979-12-27 1981-07-03 Solarex Corp Cellule solaire structuree et son procede de fabrication
EP0224022A2 (en) * 1985-10-31 1987-06-03 International Business Machines Corporation Etchant and method for etching doped silicon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXTENDED ABSTRACTS OF BATTERY DIVISION, FALL MEETING, New York, 13-17 octobre 1974, vol. 74, partie 2, Princeton, US; C. RAETZEL et al.: "Etching properties of different silicon films" *
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 10, no. 5, octobre 1967, pages 655-656, New York, US; J.R. GARDINER et al.: "Fabricating monolithic circuits" *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU710841B2 (en) * 1995-08-31 1999-09-30 C3, Inc. Silicon carbide gemstones
US6638788B2 (en) * 2001-02-07 2003-10-28 Ebara Corporation Solar cell and method of manufacturing same
WO2011134999A1 (fr) * 2010-04-28 2011-11-03 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue
FR2959599A1 (fr) * 2010-04-28 2011-11-04 Commissariat Energie Atomique Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue
US8974216B2 (en) 2010-04-28 2015-03-10 Commissariat a l' énergie atomique et aux énergies alternatives Device and method for mechanically texturing a silicon wafer intended to comprise a photovoltaic cell, and resulting silicon wafer

Also Published As

Publication number Publication date
FR2620269B1 (enrdf_load_stackoverflow) 1994-08-19
IT1226626B (it) 1991-01-25
JPH01111887A (ja) 1989-04-28
KR890005922A (ko) 1989-05-17
IT8821776A0 (it) 1988-08-29
KR0139919B1 (ko) 1998-11-16
AU602114B2 (en) 1990-09-27
AU2093688A (en) 1989-03-09
JP2925146B2 (ja) 1999-07-28

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