FR2620269B1 - - Google Patents

Info

Publication number
FR2620269B1
FR2620269B1 FR8811700A FR8811700A FR2620269B1 FR 2620269 B1 FR2620269 B1 FR 2620269B1 FR 8811700 A FR8811700 A FR 8811700A FR 8811700 A FR8811700 A FR 8811700A FR 2620269 B1 FR2620269 B1 FR 2620269B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8811700A
Other languages
French (fr)
Other versions
FR2620269A1 (fr
Inventor
Meier Daniel Leo
Mcnally James Bernard
Hohn Leonard Earl
Hwang Jeong-Mo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2620269A1 publication Critical patent/FR2620269A1/fr
Application granted granted Critical
Publication of FR2620269B1 publication Critical patent/FR2620269B1/fr
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48Back surface reflectors [BSR]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
FR8811700A 1987-09-08 1988-09-07 Procede pour texturer une surface de silicium Granted FR2620269A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9418487A 1987-09-08 1987-09-08

Publications (2)

Publication Number Publication Date
FR2620269A1 FR2620269A1 (fr) 1989-03-10
FR2620269B1 true FR2620269B1 (enrdf_load_stackoverflow) 1994-08-19

Family

ID=22243663

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8811700A Granted FR2620269A1 (fr) 1987-09-08 1988-09-07 Procede pour texturer une surface de silicium

Country Status (5)

Country Link
JP (1) JP2925146B2 (enrdf_load_stackoverflow)
KR (1) KR0139919B1 (enrdf_load_stackoverflow)
AU (1) AU602114B2 (enrdf_load_stackoverflow)
FR (1) FR2620269A1 (enrdf_load_stackoverflow)
IT (1) IT1226626B (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell
WO1993007646A1 (en) * 1991-10-08 1993-04-15 Unisearch Limited Improved optical design for photo-cell
US5762896A (en) * 1995-08-31 1998-06-09 C3, Inc. Silicon carbide gemstones
CA2370731A1 (en) * 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
FR2959599B1 (fr) * 2010-04-28 2013-12-20 Commissariat Energie Atomique Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue
CN103137716B (zh) * 2011-11-25 2016-04-27 清华大学 太阳能电池、太阳能电池组及其制备方法
TWI506801B (zh) 2011-12-09 2015-11-01 Hon Hai Prec Ind Co Ltd 太陽能電池組
JP6082237B2 (ja) * 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN106990461B (zh) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 一种直角顶角硅阶梯光栅及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062385A (enrdf_load_stackoverflow) * 1973-10-02 1975-05-28
JPS5166777A (en) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Shirikontoranjisuta
FR2472840A1 (fr) * 1979-12-27 1981-07-03 Solarex Corp Cellule solaire structuree et son procede de fabrication
JPS59139003A (ja) * 1983-01-31 1984-08-09 Sony Corp マイクロプリズム用原板の製造方法
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
JPS62105485A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体基体の製造方法

Also Published As

Publication number Publication date
IT1226626B (it) 1991-01-25
KR0139919B1 (ko) 1998-11-16
AU2093688A (en) 1989-03-09
KR890005922A (ko) 1989-05-17
AU602114B2 (en) 1990-09-27
IT8821776A0 (it) 1988-08-29
JP2925146B2 (ja) 1999-07-28
JPH01111887A (ja) 1989-04-28
FR2620269A1 (fr) 1989-03-10

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse