FR2595869B1 - Structure d'isolation par jonctions polarisees en inverse de dispositifs actifs d'un circuit integre - Google Patents

Structure d'isolation par jonctions polarisees en inverse de dispositifs actifs d'un circuit integre

Info

Publication number
FR2595869B1
FR2595869B1 FR8616565A FR8616565A FR2595869B1 FR 2595869 B1 FR2595869 B1 FR 2595869B1 FR 8616565 A FR8616565 A FR 8616565A FR 8616565 A FR8616565 A FR 8616565A FR 2595869 B1 FR2595869 B1 FR 2595869B1
Authority
FR
France
Prior art keywords
integrated circuit
insulation structure
active devices
polarized reverse
reverse junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8616565A
Other languages
English (en)
Other versions
FR2595869A1 (fr
Inventor
Gerard J Shaw
Jok Ying Go
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2595869A1 publication Critical patent/FR2595869A1/fr
Application granted granted Critical
Publication of FR2595869B1 publication Critical patent/FR2595869B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
FR8616565A 1985-11-27 1986-11-27 Structure d'isolation par jonctions polarisees en inverse de dispositifs actifs d'un circuit integre Expired - Fee Related FR2595869B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80239785A 1985-11-27 1985-11-27

Publications (2)

Publication Number Publication Date
FR2595869A1 FR2595869A1 (fr) 1987-09-18
FR2595869B1 true FR2595869B1 (fr) 1991-04-19

Family

ID=25183590

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8616565A Expired - Fee Related FR2595869B1 (fr) 1985-11-27 1986-11-27 Structure d'isolation par jonctions polarisees en inverse de dispositifs actifs d'un circuit integre

Country Status (4)

Country Link
JP (1) JPS62132355A (fr)
DE (1) DE3640438A1 (fr)
FR (1) FR2595869B1 (fr)
GB (1) GB2183907B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2634321B1 (fr) * 1988-07-13 1992-04-10 Sgs Thomson Microelectronics Structure de circuit integre ameliorant l'isolement entre composants

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2216678B1 (fr) * 1973-02-02 1977-08-19 Radiotechnique Compelec
JPS5314420B2 (fr) * 1973-05-14 1978-05-17
US3836996A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
JPS51115782A (en) * 1975-04-04 1976-10-12 Hitachi Ltd Semiconductor apparatus
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
DE2952318C2 (de) * 1979-12-24 1986-09-18 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltungsanordnung und Verfahren zu ihrer Herstellung
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process
US4477310A (en) * 1983-08-12 1984-10-16 Tektronix, Inc. Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas
EP0138517B1 (fr) * 1983-10-11 1988-07-06 AT&T Corp. Circuits intégrés semi-conducteurs comportant des dispositifs complémentaires métal-oxyde-semi-conducteur

Also Published As

Publication number Publication date
GB8627267D0 (en) 1986-12-17
DE3640438A1 (de) 1987-07-02
GB2183907B (en) 1989-10-04
JPS62132355A (ja) 1987-06-15
GB2183907A (en) 1987-06-10
FR2595869A1 (fr) 1987-09-18

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