FR2592750A1 - Dispositif de commutation a semiconducteurs composite - Google Patents

Dispositif de commutation a semiconducteurs composite

Info

Publication number
FR2592750A1
FR2592750A1 FR8618346A FR8618346A FR2592750A1 FR 2592750 A1 FR2592750 A1 FR 2592750A1 FR 8618346 A FR8618346 A FR 8618346A FR 8618346 A FR8618346 A FR 8618346A FR 2592750 A1 FR2592750 A1 FR 2592750A1
Authority
FR
France
Prior art keywords
switching device
capacitor
control terminal
semiconductor switching
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8618346A
Other languages
English (en)
Other versions
FR2592750B1 (fr
Inventor
Shoichi Furuhata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of FR2592750A1 publication Critical patent/FR2592750A1/fr
Application granted granted Critical
Publication of FR2592750B1 publication Critical patent/FR2592750B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching

Landscapes

  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

Un dispositif de commutation associé à une source d'énergie 1 et une charge 2 comprend notamment un dispositif bipolaire 3 et un dispositif à effet de champ 4 connectés en série, et un condensateur 24 connecté entre la borne de commande B du dispositif bipolaire et une borne du dispositif à effet de champ. La borne de commande du dispositif bipolaire applique un courant de charge au condensateur au moment du blocage du dispositif à effet de champ, et le condensateur restitue un courant d'attaque à la borne de commande du dispositif bipolaire au moment du déblocage du dispositif à effet de champ. Application aux dispositifs de commutation rapides de puissance. (CF DESSIN DANS BOPI)
FR8618346A 1986-01-07 1986-12-30 Dispositif de commutation a semiconducteurs composite Expired - Fee Related FR2592750B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61001025A JPS62159515A (ja) 1986-01-07 1986-01-07 複合半導体装置

Publications (2)

Publication Number Publication Date
FR2592750A1 true FR2592750A1 (fr) 1987-07-10
FR2592750B1 FR2592750B1 (fr) 1993-04-09

Family

ID=11490022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8618346A Expired - Fee Related FR2592750B1 (fr) 1986-01-07 1986-12-30 Dispositif de commutation a semiconducteurs composite

Country Status (4)

Country Link
US (1) US4740722A (fr)
JP (1) JPS62159515A (fr)
DE (1) DE3700071A1 (fr)
FR (1) FR2592750B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0959562A1 (fr) * 1998-05-21 1999-11-24 STMicroelectronics S.r.l. Circuit servant à la commutation d'une charge au moyen d'un dispositif commuté par l'émetteur

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945266A (en) * 1987-11-18 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Composite semiconductor device
JPH01288011A (ja) * 1988-05-14 1989-11-20 Matsushita Electric Works Ltd 静電誘導サイリスタの駆動回路
DE3824694A1 (de) * 1988-07-20 1990-02-01 Fraunhofer Ges Forschung Halbleiterschaltung fuer schnelle schaltvorgaenge
DE3839156C2 (de) * 1988-11-17 1993-10-28 Licentia Gmbh Schaltungsanordnung zum Ansteuern einer Reihenschaltung eines bipolaren Transistors und eines MOS-Feldeffekttransistors
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
US6084461A (en) * 1996-11-29 2000-07-04 Varian Medical Systems, Inc. Charge sensitive amplifier with high common mode signal rejection
JP3811681B2 (ja) * 2002-06-12 2006-08-23 日本碍子株式会社 高電圧パルス発生回路
US7095028B2 (en) * 2003-10-15 2006-08-22 Varian Medical Systems Multi-slice flat panel computed tomography
US7589326B2 (en) * 2003-10-15 2009-09-15 Varian Medical Systems Technologies, Inc. Systems and methods for image acquisition
JP4418212B2 (ja) * 2003-11-21 2010-02-17 日本碍子株式会社 高電圧パルス発生回路
JP4538305B2 (ja) * 2004-12-07 2010-09-08 日本碍子株式会社 放電装置
EP1847018B1 (fr) * 2005-12-13 2009-01-14 STMicroelectronics S.r.l. Circuit d`attaque pour une configuration de commutation d`emetteurs
US20070242492A1 (en) * 2006-04-18 2007-10-18 Ngk Insulators, Ltd. Pulse generator circuit
DE102010038623A1 (de) * 2010-07-29 2012-02-02 Robert Bosch Gmbh Schaltungsanordnung und Verfahren zur Begrenzung von Stromstärke und/oder Flankensteilheit elektrischer Signale
EP2525492B1 (fr) * 2011-05-19 2019-07-10 Nxp B.V. Dispositif de commutation électronique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2053606A (en) * 1979-06-01 1981-02-04 Gould Advance Ltd Improvements in and relating to semiconductor switching circuits
GB2105927A (en) * 1981-07-16 1983-03-30 Plessey Co Ltd A switching circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360744A (en) * 1979-06-01 1982-11-23 Taylor Brian E Semiconductor switching circuits
US4581542A (en) * 1983-11-14 1986-04-08 General Electric Company Driver circuits for emitter switch gate turn-off SCR devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2053606A (en) * 1979-06-01 1981-02-04 Gould Advance Ltd Improvements in and relating to semiconductor switching circuits
GB2105927A (en) * 1981-07-16 1983-03-30 Plessey Co Ltd A switching circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0959562A1 (fr) * 1998-05-21 1999-11-24 STMicroelectronics S.r.l. Circuit servant à la commutation d'une charge au moyen d'un dispositif commuté par l'émetteur
US6255890B1 (en) 1998-05-21 2001-07-03 Stmicroelectronics S.R.L. Circuit for controlling the switching of a load by means of an emitter-switching device

Also Published As

Publication number Publication date
FR2592750B1 (fr) 1993-04-09
JPS62159515A (ja) 1987-07-15
DE3700071A1 (de) 1987-07-09
US4740722A (en) 1988-04-26

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Legal Events

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