FR2579911A1 - - Google Patents
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- Publication number
- FR2579911A1 FR2579911A1 FR8604894A FR8604894A FR2579911A1 FR 2579911 A1 FR2579911 A1 FR 2579911A1 FR 8604894 A FR8604894 A FR 8604894A FR 8604894 A FR8604894 A FR 8604894A FR 2579911 A1 FR2579911 A1 FR 2579911A1
- Authority
- FR
- France
- Prior art keywords
- silicon
- film
- polycrystalline silicon
- thin film
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 abstract description 55
- 239000010703 silicon Substances 0.000 abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 50
- 238000000034 method Methods 0.000 abstract description 49
- 239000010408 film Substances 0.000 abstract description 48
- 239000010409 thin film Substances 0.000 abstract description 48
- 239000000758 substrate Substances 0.000 abstract description 35
- 230000008569 process Effects 0.000 abstract description 25
- 150000002500 ions Chemical class 0.000 abstract description 15
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000007935 neutral effect Effects 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 53
- 239000013078 crystal Substances 0.000 description 23
- 230000001133 acceleration Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- -1 silicon ions Chemical class 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320085A JPS61230317A (ja) | 1985-04-04 | 1985-04-04 | 多結晶質薄膜の形成方法 |
| JP29496285A JPS62149115A (ja) | 1985-12-23 | 1985-12-23 | 多結晶シリコン薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2579911A1 true FR2579911A1 (enrdf_load_stackoverflow) | 1986-10-10 |
| FR2579911B1 FR2579911B1 (enrdf_load_stackoverflow) | 1991-03-29 |
Family
ID=26414350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8604894A Expired FR2579911B1 (enrdf_load_stackoverflow) | 1985-04-04 | 1986-04-04 |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2579911B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2174108B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19955287A1 (de) * | 1999-11-17 | 2001-08-02 | Bosch Gmbh Robert | Verfahren zum Herstellen von dotiertem polykristallinem Silicium für piezoresistive Anordnungen |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2631881A1 (de) * | 1975-07-18 | 1977-02-03 | Futaba Denshi Kogyo Kk | Verfahren zur herstellung einer halbleitervorrichtung |
| EP0023021A1 (en) * | 1979-07-20 | 1981-01-28 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB992677A (en) * | 1961-11-06 | 1965-05-19 | Berghaus Elektrophysik Anst | Method of increasing the efficiency of nuclear reactors |
| BE717304A (enrdf_load_stackoverflow) * | 1968-06-28 | 1968-12-30 | ||
| CH264574A4 (de) * | 1973-03-05 | 1977-04-29 | Suwa Seikosha Kk | Verfahren zum Plattieren von Uhrenteilen in einem Vakuumbehälter |
| US4091138A (en) * | 1975-02-12 | 1978-05-23 | Sumitomo Bakelite Company Limited | Insulating film, sheet, or plate material with metallic coating and method for manufacturing same |
| DE2644208C3 (de) * | 1976-09-30 | 1981-04-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage |
| GB1598814A (en) * | 1978-05-15 | 1981-09-23 | Atomic Energy Authority Uk | Cemented carbide cutting tools |
| EP0029747A1 (en) * | 1979-11-27 | 1981-06-03 | Konica Corporation | An apparatus for vacuum deposition and a method for forming a thin film by the use thereof |
| GB2090291B (en) * | 1980-12-22 | 1985-05-15 | Secr Defence | Sputter ion plating of refractory metal/metal compounds |
| FR2513439B1 (fr) * | 1981-09-18 | 1985-09-13 | Labo Electronique Physique | Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus |
| US4615766A (en) * | 1985-02-27 | 1986-10-07 | International Business Machines Corporation | Silicon cap for annealing gallium arsenide |
| JP2597976B2 (ja) * | 1985-03-27 | 1997-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US4740481A (en) * | 1986-01-21 | 1988-04-26 | Motorola Inc. | Method of preventing hillock formation in polysilicon layer by oxygen implanation |
-
1986
- 1986-04-04 GB GB8608218A patent/GB2174108B/en not_active Expired
- 1986-04-04 FR FR8604894A patent/FR2579911B1/fr not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2631881A1 (de) * | 1975-07-18 | 1977-02-03 | Futaba Denshi Kogyo Kk | Verfahren zur herstellung einer halbleitervorrichtung |
| EP0023021A1 (en) * | 1979-07-20 | 1981-01-28 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
Non-Patent Citations (5)
| Title |
|---|
| EXTENDED ABSTRACTS, vol. 82-1, mai 1982, pages 123-124, résumé no. 76, Pennington, New Jersey, US; A.R.KIRKPATRICK et al.: "Amorphous silicon films for solar cells by ionized cluster beam deposition" * |
| JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 16, Supplem. 16-1, 1977, pages 427-431, Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; T.TAKAGI et al.: "Photovoltaic characteristics of photocells by ionized-cluster beam deposition and epitaxy" * |
| JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 22, supplement 22-1, 1983, Proceedings of the 14th Conference (1982 International) on Solid State Devices, Tokyo, 1982, pages 393-496, Tokyo, JP; Y.OANA et al.: "Electrical properties of polycrystalline silicon MOSFETs on glass" * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 120, no. 11, novembre 1973, pages 1540-1546, Princeton, New Jersey, US; R.M.ANDERSON: "Microstructural analysis of evaporated and pyrolytic silicon thin films" * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 120, no. 8, août 1973, pages 1111-1116, Princeton, New Jersey, US; C.FELDMAN et al.: "Mass spectra analyses of impurities and ion clusters in amorphous and crystalline silicon films" * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2174108B (en) | 1989-07-19 |
| GB8608218D0 (en) | 1986-05-08 |
| FR2579911B1 (enrdf_load_stackoverflow) | 1991-03-29 |
| GB2174108A (en) | 1986-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |