GB2174108B - Method for forming a polycrystalline silicon thin film - Google Patents

Method for forming a polycrystalline silicon thin film

Info

Publication number
GB2174108B
GB2174108B GB8608218A GB8608218A GB2174108B GB 2174108 B GB2174108 B GB 2174108B GB 8608218 A GB8608218 A GB 8608218A GB 8608218 A GB8608218 A GB 8608218A GB 2174108 B GB2174108 B GB 2174108B
Authority
GB
United Kingdom
Prior art keywords
forming
thin film
polycrystalline silicon
silicon thin
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8608218A
Other languages
English (en)
Other versions
GB8608218D0 (en
GB2174108A (en
Inventor
Teruyoshi Hara
Akio Kawamura
Katsuji Iguchi
Akinori Seki
Jun Kudo
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7320085A external-priority patent/JPS61230317A/ja
Priority claimed from JP29496285A external-priority patent/JPS62149115A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB8608218D0 publication Critical patent/GB8608218D0/en
Publication of GB2174108A publication Critical patent/GB2174108A/en
Application granted granted Critical
Publication of GB2174108B publication Critical patent/GB2174108B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB8608218A 1985-04-04 1986-04-04 Method for forming a polycrystalline silicon thin film Expired GB2174108B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7320085A JPS61230317A (ja) 1985-04-04 1985-04-04 多結晶質薄膜の形成方法
JP29496285A JPS62149115A (ja) 1985-12-23 1985-12-23 多結晶シリコン薄膜の形成方法

Publications (3)

Publication Number Publication Date
GB8608218D0 GB8608218D0 (en) 1986-05-08
GB2174108A GB2174108A (en) 1986-10-29
GB2174108B true GB2174108B (en) 1989-07-19

Family

ID=26414350

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8608218A Expired GB2174108B (en) 1985-04-04 1986-04-04 Method for forming a polycrystalline silicon thin film

Country Status (2)

Country Link
FR (1) FR2579911B1 (enrdf_load_stackoverflow)
GB (1) GB2174108B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19955287A1 (de) * 1999-11-17 2001-08-02 Bosch Gmbh Robert Verfahren zum Herstellen von dotiertem polykristallinem Silicium für piezoresistive Anordnungen

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB992677A (en) * 1961-11-06 1965-05-19 Berghaus Elektrophysik Anst Method of increasing the efficiency of nuclear reactors
GB1234312A (enrdf_load_stackoverflow) * 1968-06-28 1971-06-03
GB1427674A (en) * 1973-03-05 1976-03-10 Suwa Seikosha Kk Process for coating a material onto a timepiece part
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
GB1532759A (en) * 1976-09-30 1978-11-22 Siemens Ag Production of monocrystalline layers on substrates
EP0029747A1 (en) * 1979-11-27 1981-06-03 Konica Corporation An apparatus for vacuum deposition and a method for forming a thin film by the use thereof
GB1598814A (en) * 1978-05-15 1981-09-23 Atomic Energy Authority Uk Cemented carbide cutting tools
GB2090291A (en) * 1980-12-22 1982-07-07 Secr Defence Sputter ion plating of refractory metal/metal compounds
EP0075368A2 (fr) * 1981-09-18 1983-03-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication d'un dispositif semi-conducteur en GaAs par implantations ioniques, ainsi que substrat et dispositif ainsi obtenus
EP0193021A1 (en) * 1985-02-27 1986-09-03 International Business Machines Corporation A method of forming an ion implanted gallium arsenide device
EP0195867A2 (en) * 1985-03-27 1986-10-01 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including an implantation step
GB2185624A (en) * 1986-01-21 1987-07-22 Motorola Inc Stabilizing polycrystalline semiconductor surfaces

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631881C2 (de) * 1975-07-18 1982-11-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Verfahren zur Herstellung eines Halbleiterbauelementes
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB992677A (en) * 1961-11-06 1965-05-19 Berghaus Elektrophysik Anst Method of increasing the efficiency of nuclear reactors
GB1234312A (enrdf_load_stackoverflow) * 1968-06-28 1971-06-03
GB1427674A (en) * 1973-03-05 1976-03-10 Suwa Seikosha Kk Process for coating a material onto a timepiece part
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
GB1532759A (en) * 1976-09-30 1978-11-22 Siemens Ag Production of monocrystalline layers on substrates
GB1598814A (en) * 1978-05-15 1981-09-23 Atomic Energy Authority Uk Cemented carbide cutting tools
EP0029747A1 (en) * 1979-11-27 1981-06-03 Konica Corporation An apparatus for vacuum deposition and a method for forming a thin film by the use thereof
GB2090291A (en) * 1980-12-22 1982-07-07 Secr Defence Sputter ion plating of refractory metal/metal compounds
EP0075368A2 (fr) * 1981-09-18 1983-03-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication d'un dispositif semi-conducteur en GaAs par implantations ioniques, ainsi que substrat et dispositif ainsi obtenus
EP0193021A1 (en) * 1985-02-27 1986-09-03 International Business Machines Corporation A method of forming an ion implanted gallium arsenide device
EP0195867A2 (en) * 1985-03-27 1986-10-01 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including an implantation step
GB2185624A (en) * 1986-01-21 1987-07-22 Motorola Inc Stabilizing polycrystalline semiconductor surfaces

Also Published As

Publication number Publication date
FR2579911A1 (enrdf_load_stackoverflow) 1986-10-10
GB8608218D0 (en) 1986-05-08
FR2579911B1 (enrdf_load_stackoverflow) 1991-03-29
GB2174108A (en) 1986-10-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990404