FR2579817B1 - Dispositif pour verifier des cellules de memoire en fonction de l'etat de seuil pouvant etre obtenu en phase d'ecriture - Google Patents
Dispositif pour verifier des cellules de memoire en fonction de l'etat de seuil pouvant etre obtenu en phase d'ecritureInfo
- Publication number
- FR2579817B1 FR2579817B1 FR868604273A FR8604273A FR2579817B1 FR 2579817 B1 FR2579817 B1 FR 2579817B1 FR 868604273 A FR868604273 A FR 868604273A FR 8604273 A FR8604273 A FR 8604273A FR 2579817 B1 FR2579817 B1 FR 2579817B1
- Authority
- FR
- France
- Prior art keywords
- function
- memory cells
- threshold condition
- writing phase
- verifying memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT20127/85A IT1221018B (it) | 1985-03-28 | 1985-03-28 | Dispositivo per verificare celle di memoria in funzione del salto di soglia ottenibile in fase di scrittura |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2579817A1 FR2579817A1 (fr) | 1986-10-03 |
FR2579817B1 true FR2579817B1 (fr) | 1993-01-08 |
Family
ID=11164023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR868604273A Expired - Fee Related FR2579817B1 (fr) | 1985-03-28 | 1986-03-25 | Dispositif pour verifier des cellules de memoire en fonction de l'etat de seuil pouvant etre obtenu en phase d'ecriture |
Country Status (6)
Country | Link |
---|---|
US (1) | US4802166A (fr) |
JP (1) | JPH0734320B2 (fr) |
DE (1) | DE3610071C2 (fr) |
FR (1) | FR2579817B1 (fr) |
GB (1) | GB2173367B (fr) |
IT (1) | IT1221018B (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229599A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
US4903265A (en) * | 1987-11-12 | 1990-02-20 | Motorola, Inc. | Method and apparatus for post-packaging testing of one-time programmable memories |
IT1221780B (it) * | 1988-01-29 | 1990-07-12 | Sgs Thomson Microelectronics | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos |
GB8916019D0 (en) * | 1989-07-13 | 1989-08-31 | Hughes Microelectronics Ltd | A non-volatile ram bit cell |
JPH0346197A (ja) * | 1989-07-13 | 1991-02-27 | Fujitsu Ltd | 半導体記憶装置 |
FR2665792B1 (fr) * | 1990-08-08 | 1993-06-11 | Sgs Thomson Microelectronics | Memoire integree pourvue de moyens de test ameliores. |
US5142496A (en) * | 1991-06-03 | 1992-08-25 | Advanced Micro Devices, Inc. | Method for measuring VT 's less than zero without applying negative voltages |
FR2694404B1 (fr) * | 1992-07-31 | 1994-09-09 | Sgs Thomson Microelectronics | Procédé de mesure des tensions de seuil des cellules d'une mémoire intégrée. |
EP0798726B1 (fr) * | 1996-03-29 | 2004-01-07 | STMicroelectronics S.r.l. | Architecture pour la gestion de programmation et lecture des dispositifs de mémoire, notamment pour des tests |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7301807B2 (en) | 2003-10-23 | 2007-11-27 | Sandisk Corporation | Writable tracking cells |
TWI258768B (en) * | 2004-03-10 | 2006-07-21 | Samsung Electronics Co Ltd | Sense amplifier and method for generating variable reference level |
KR100634169B1 (ko) * | 2004-03-10 | 2006-10-16 | 삼성전자주식회사 | 가변형 기준레벨 발생 기능을 가진 센스 앰프 및 그 방법 |
US20190311749A1 (en) * | 2018-04-09 | 2019-10-10 | Anaflash Inc. | Logic Compatible Embedded Flash Memory |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223394A (en) * | 1979-02-13 | 1980-09-16 | Intel Corporation | Sensing amplifier for floating gate memory devices |
US4393475A (en) * | 1981-01-27 | 1983-07-12 | Texas Instruments Incorporated | Non-volatile semiconductor memory and the testing method for the same |
JPS5891594A (ja) * | 1981-11-27 | 1983-05-31 | Fujitsu Ltd | ダイナミツク型半導体記憶装置 |
US4460985A (en) * | 1982-02-19 | 1984-07-17 | International Business Machines Corporation | Sense amplifier for MOS static memory array |
EP0089397B1 (fr) * | 1982-03-24 | 1985-12-04 | Deutsche ITT Industries GmbH | Matrice de mémoire intégrée composée de cellules programmables non-volatiles |
US4460982A (en) * | 1982-05-20 | 1984-07-17 | Intel Corporation | Intelligent electrically programmable and electrically erasable ROM |
US4612630A (en) * | 1984-07-27 | 1986-09-16 | Harris Corporation | EEPROM margin testing design |
US4670708A (en) * | 1984-07-30 | 1987-06-02 | Monolithic Memories, Inc. | Short detector for fusible link array using a pair of parallel connected reference fusible links |
-
1985
- 1985-03-28 IT IT20127/85A patent/IT1221018B/it active
-
1986
- 1986-02-28 US US06/835,059 patent/US4802166A/en not_active Expired - Lifetime
- 1986-03-05 GB GB8605387A patent/GB2173367B/en not_active Expired
- 1986-03-19 JP JP5964586A patent/JPH0734320B2/ja not_active Expired - Fee Related
- 1986-03-25 DE DE3610071A patent/DE3610071C2/de not_active Expired - Fee Related
- 1986-03-25 FR FR868604273A patent/FR2579817B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2579817A1 (fr) | 1986-10-03 |
DE3610071A1 (de) | 1986-10-02 |
DE3610071C2 (de) | 1995-05-18 |
JPH0734320B2 (ja) | 1995-04-12 |
GB2173367B (en) | 1989-06-21 |
GB8605387D0 (en) | 1986-04-09 |
GB2173367A (en) | 1986-10-08 |
IT8520127A0 (it) | 1985-03-28 |
JPS61224200A (ja) | 1986-10-04 |
US4802166A (en) | 1989-01-31 |
IT1221018B (it) | 1990-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |