FR2524198B1 - Appareil d'exposition par faisceau de particules chargees utilisant un balayage par une ligne variable - Google Patents

Appareil d'exposition par faisceau de particules chargees utilisant un balayage par une ligne variable

Info

Publication number
FR2524198B1
FR2524198B1 FR8303599A FR8303599A FR2524198B1 FR 2524198 B1 FR2524198 B1 FR 2524198B1 FR 8303599 A FR8303599 A FR 8303599A FR 8303599 A FR8303599 A FR 8303599A FR 2524198 B1 FR2524198 B1 FR 2524198B1
Authority
FR
France
Prior art keywords
exposure apparatus
particle beam
line scan
beam exposure
variable line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8303599A
Other languages
English (en)
Other versions
FR2524198A1 (fr
Inventor
Norman James Taylor
Paul Francis Petric
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2524198A1 publication Critical patent/FR2524198A1/fr
Application granted granted Critical
Publication of FR2524198B1 publication Critical patent/FR2524198B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR8303599A 1982-03-04 1983-03-04 Appareil d'exposition par faisceau de particules chargees utilisant un balayage par une ligne variable Expired FR2524198B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/354,822 US4469950A (en) 1982-03-04 1982-03-04 Charged particle beam exposure system utilizing variable line scan

Publications (2)

Publication Number Publication Date
FR2524198A1 FR2524198A1 (fr) 1983-09-30
FR2524198B1 true FR2524198B1 (fr) 1987-03-20

Family

ID=23395037

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8303599A Expired FR2524198B1 (fr) 1982-03-04 1983-03-04 Appareil d'exposition par faisceau de particules chargees utilisant un balayage par une ligne variable

Country Status (5)

Country Link
US (1) US4469950A (fr)
JP (1) JPS58190028A (fr)
DE (1) DE3307138A1 (fr)
FR (1) FR2524198B1 (fr)
GB (1) GB2116358B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957431A (ja) * 1982-09-27 1984-04-03 Fujitsu Ltd 電子ビ−ム露光装置
JPS5961134A (ja) * 1982-09-30 1984-04-07 Toshiba Corp 荷電ビ−ム露光装置
JPS59124719A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 電子ビ−ム露光装置
DD225879A3 (de) * 1983-07-01 1985-08-07 Zeiss Jena Veb Carl Verfahren und einrichtung zur korpuskularbestrahlung eines targets
GB8415623D0 (en) * 1984-06-19 1984-07-25 Nixon W C Charged particle sources
US4634871A (en) * 1985-01-14 1987-01-06 Hughes Aircraft Company Method and apparatus for spot shaping and blanking a focused beam
US4698509A (en) * 1985-02-14 1987-10-06 Varian Associates, Inc. High speed pattern generator for electron beam lithography
DE8634545U1 (de) * 1986-12-23 1987-05-21 Siemens AG, 1000 Berlin und 8000 München Korpuskularstrahlgerät zur fehlerarmen Abbildung linienförmiger Objekte
US5005233A (en) * 1989-03-15 1991-04-09 Ikka Toivio Apparatus for transferring patients
US5349197A (en) * 1991-09-30 1994-09-20 Fujitsu Limited Method for exposing a pattern on an object by a charged particle beam
US5534677A (en) * 1993-03-18 1996-07-09 Regents Of The University Of California Electron beam machining using rotating and shaped beam power distribution
JP2971313B2 (ja) * 1993-12-24 1999-11-02 株式会社東芝 欠陥検出装置及び検出方法
US6274290B1 (en) 1997-01-28 2001-08-14 Etec Systems, Inc. Raster scan gaussian beam writing strategy and method for pattern generation
US6145438A (en) * 1998-03-20 2000-11-14 Berglund; C. Neil Method and apparatus for direct writing of semiconductor die using microcolumn array
US6262429B1 (en) 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
US6556702B1 (en) 1999-01-06 2003-04-29 Applied Materials, Inc. Method and apparatus that determines charged particle beam shape codes
US6259106B1 (en) 1999-01-06 2001-07-10 Etec Systems, Inc. Apparatus and method for controlling a beam shape
US6822246B2 (en) * 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
JP3930411B2 (ja) * 2002-09-30 2007-06-13 株式会社東芝 荷電ビーム描画装置及び描画方法
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US9960013B2 (en) * 2016-01-13 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Continuous writing of pattern

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams
JPS5283177A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Electron beam exposure device
FR2351497A1 (fr) * 1976-05-14 1977-12-09 Thomson Csf Dispositif permettant le trace programme de figures de formes differentes
JPS6051261B2 (ja) * 1976-05-26 1985-11-13 株式会社東芝 荷電粒子ビ−ム描画装置
JPS52151568A (en) * 1976-06-11 1977-12-16 Jeol Ltd Electron beam exposure apparatus
US4182958A (en) * 1977-05-31 1980-01-08 Rikagaku Kenkyusho Method and apparatus for projecting a beam of electrically charged particles
JPS5412675A (en) * 1977-06-30 1979-01-30 Jeol Ltd Electon beam exposure method
US4167676A (en) * 1978-02-21 1979-09-11 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
US4282437A (en) * 1979-12-17 1981-08-04 Bell Telephone Laboratories, Incorporated Charged particle beam lithography

Also Published As

Publication number Publication date
GB2116358B (en) 1985-07-24
GB2116358A (en) 1983-09-21
DE3307138A1 (de) 1983-09-22
JPS58190028A (ja) 1983-11-05
GB8304436D0 (en) 1983-03-23
FR2524198A1 (fr) 1983-09-30
US4469950A (en) 1984-09-04

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Legal Events

Date Code Title Description
ST Notification of lapse