FR2506072B1 - Accelerateur de faisceau de particules - Google Patents

Accelerateur de faisceau de particules

Info

Publication number
FR2506072B1
FR2506072B1 FR8208719A FR8208719A FR2506072B1 FR 2506072 B1 FR2506072 B1 FR 2506072B1 FR 8208719 A FR8208719 A FR 8208719A FR 8208719 A FR8208719 A FR 8208719A FR 2506072 B1 FR2506072 B1 FR 2506072B1
Authority
FR
France
Prior art keywords
particle beam
beam accelerator
accelerator
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8208719A
Other languages
English (en)
Other versions
FR2506072A1 (fr
Inventor
Norman Leonard Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2506072A1 publication Critical patent/FR2506072A1/fr
Application granted granted Critical
Publication of FR2506072B1 publication Critical patent/FR2506072B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
FR8208719A 1981-05-18 1982-05-18 Accelerateur de faisceau de particules Expired FR2506072B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/264,498 US4383180A (en) 1981-05-18 1981-05-18 Particle beam accelerator

Publications (2)

Publication Number Publication Date
FR2506072A1 FR2506072A1 (fr) 1982-11-19
FR2506072B1 true FR2506072B1 (fr) 1986-01-03

Family

ID=23006320

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8208719A Expired FR2506072B1 (fr) 1981-05-18 1982-05-18 Accelerateur de faisceau de particules

Country Status (6)

Country Link
US (1) US4383180A (fr)
JP (1) JPS57192000A (fr)
CH (1) CH672217A5 (fr)
DE (1) DE3218513A1 (fr)
FR (1) FR2506072B1 (fr)
GB (1) GB2099210B (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
JPH0724209B2 (ja) * 1985-03-08 1995-03-15 日新電機株式会社 イオン注入装置
US4667111C1 (en) * 1985-05-17 2001-04-10 Eaton Corp Cleveland Accelerator for ion implantation
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
JPS6381743A (ja) * 1986-09-26 1988-04-12 Jeol Ltd 電界放射型電子銃
GB8725459D0 (en) * 1987-10-30 1987-12-02 Nat Research Dev Corpn Generating particle beams
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5091655A (en) * 1991-02-25 1992-02-25 Eaton Corporation Reduced path ion beam implanter
EP0604011A1 (fr) * 1992-12-23 1994-06-29 Advanced Micro Devices, Inc. Dispositif et procédé pour l'implantation d'ions
US5546743A (en) * 1994-12-08 1996-08-20 Conner; Paul H. Electron propulsion unit
US5742062A (en) * 1995-02-13 1998-04-21 Ims Mikrofabrikations Systeme Gmbh Arrangement for masked beam lithography by means of electrically charged particles
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5825140A (en) * 1996-02-29 1998-10-20 Nissin Electric Co., Ltd. Radio-frequency type charged particle accelerator
US6403452B1 (en) 1999-02-22 2002-06-11 Kabushiki Kaisha Toshiba Ion implantation method and ion implantation equipment
JP2003522398A (ja) * 2000-02-11 2003-07-22 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 高エネルギー加速器を低エネルギーモードで動作する方法および装置
JP3738734B2 (ja) * 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
JP4560712B2 (ja) * 2003-07-18 2010-10-13 イーエムエス ナノファブリカツィオン アーゲー 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
EP2027594B1 (fr) * 2005-07-08 2011-12-14 NexGen Semi Holding, Inc. Appareil et procédé de fabrication contrôle de semi-conducteur avec faisceau de particules
WO2008140585A1 (fr) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Appareil et procédé de fabrication de masque conforme
US7820986B2 (en) * 2007-09-13 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling a charged particle beam
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
DE102010041813A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Nts Gmbh Teilchenstrahlgerät und Verfahren zur Untersuchung und/oder Bearbeitung eines Objekts
US8558486B2 (en) * 2010-12-08 2013-10-15 Gtat Corporation D. c. Charged particle accelerator, a method of accelerating charged particles using d. c. voltages and a high voltage power supply apparatus for use therewith
US8723452B2 (en) 2010-12-08 2014-05-13 Gtat Corporation D.C. charged particle accelerator and a method of accelerating charged particles
EP2485571B1 (fr) * 2011-02-08 2014-06-11 High Voltage Engineering Europa B.V. Accélérateur CC à extrémité unique à courant élevé
US10098218B2 (en) * 2014-09-03 2018-10-09 Mitsubishi Electric Corporation Transportable linear accelerator system and transportable neutron source equipped therewith
US10763071B2 (en) * 2018-06-01 2020-09-01 Varian Semiconductor Equipment Associates, Inc. Compact high energy ion implantation system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE898500C (de) * 1945-03-15 1953-11-30 Siemens Ag Korpuskularstrahlapparat, insbesondere Elektronenmikroskop
US3710163A (en) * 1971-02-02 1973-01-09 B Rudiak Method for the acceleration of ions in linear accelerators and a linear accelerator for the realization of this method
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods

Also Published As

Publication number Publication date
JPS57192000A (en) 1982-11-25
CH672217A5 (fr) 1989-10-31
JPH0370360B2 (fr) 1991-11-07
FR2506072A1 (fr) 1982-11-19
GB2099210B (en) 1985-01-03
GB2099210A (en) 1982-12-01
US4383180A (en) 1983-05-10
DE3218513C2 (fr) 1992-07-09
DE3218513A1 (de) 1982-12-09

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Legal Events

Date Code Title Description
TP Transmission of property