DE8634545U1 - - Google Patents

Info

Publication number
DE8634545U1
DE8634545U1 DE8634545U DE8634545U DE8634545U1 DE 8634545 U1 DE8634545 U1 DE 8634545U1 DE 8634545 U DE8634545 U DE 8634545U DE 8634545 U DE8634545 U DE 8634545U DE 8634545 U1 DE8634545 U1 DE 8634545U1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8634545U
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE8634545U priority Critical patent/DE8634545U1/de
Publication of DE8634545U1 publication Critical patent/DE8634545U1/de
Priority to US07/066,212 priority patent/US4853545A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
DE8634545U 1986-12-23 1986-12-23 Expired DE8634545U1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE8634545U DE8634545U1 (de) 1986-12-23 1986-12-23
US07/066,212 US4853545A (en) 1986-12-23 1987-06-25 Particle beam apparatus for low-error imaging of line-shaped subjects

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE8634545U DE8634545U1 (de) 1986-12-23 1986-12-23

Publications (1)

Publication Number Publication Date
DE8634545U1 true DE8634545U1 (de) 1987-05-21

Family

ID=6801415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8634545U Expired DE8634545U1 (de) 1986-12-23 1986-12-23

Country Status (2)

Country Link
US (1) US4853545A (de)
DE (1) DE8634545U1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2216714B (en) * 1988-03-11 1992-10-14 Ulvac Corp Ion implanter system
CA1317035C (en) * 1989-01-25 1993-04-27 Matthias Brunner Method for examining a specimen in a particle beam instrument
US5019712A (en) * 1989-06-08 1991-05-28 Hughes Aircraft Company Production of focused ion cluster beams
US4962317A (en) * 1989-09-29 1990-10-09 The United States Of America As Represented By The United States Department Of Energy Confined energy distribution for charged particle beams
US5126287A (en) * 1990-06-07 1992-06-30 Mcnc Self-aligned electron emitter fabrication method and devices formed thereby
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
JPH08507643A (ja) * 1993-03-11 1996-08-13 フェド．コーポレイション エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
US5468965A (en) * 1994-09-09 1995-11-21 The Regents Of The University Of California, Office Of Technology Transfer Circular, confined distribution for charged particle beams
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US6822246B2 (en) * 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
EP1783811A3 (de) * 2005-11-02 2008-02-27 FEI Company Korrektor zur Korrektion von chromatischen Aberrationen in einem korpuskularoptiachen Apparat
EP2091062A1 (de) * 2008-02-13 2009-08-19 FEI Company TEM mit Aberrationskorrektor und Phasenplatte
EP2128885A1 (de) 2008-05-26 2009-12-02 FEI Company Quelle für geladene Teilchen mit integriertem Energiefilter
EP2131385A1 (de) * 2008-06-05 2009-12-09 FEI Company Hybridphasenplatte
EP2166557A1 (de) 2008-09-22 2010-03-24 FEI Company Verfahren zur Berichtigung von Verzerrungen in einer teilchenoptischen Vorrichtung
EP2325862A1 (de) * 2009-11-18 2011-05-25 Fei Company Korrektor für axiale Aberrationen einer teilchenoptischen Linse
EP2511936B1 (de) 2011-04-13 2013-10-02 Fei Company Verzerrungsfreie Stigmation eines TEM

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2919381A (en) * 1956-07-25 1959-12-29 Farrand Optical Co Inc Electron lens
GB1325540A (en) * 1969-10-10 1973-08-01 Texas Instruments Ltd Electron beam apparatus
US4472636A (en) * 1979-11-01 1984-09-18 Eberhard Hahn Method of and device for corpuscular projection
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
US4389571A (en) * 1981-04-01 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Multiple sextupole system for the correction of third and higher order aberration
DE3138896A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Elektronenoptisches system mit vario-formstrahl zur erzeugung und messung von mikrostrukturen
US4414474A (en) * 1982-02-17 1983-11-08 University Patents, Inc. Corrector for axial aberrations in electron optic instruments
US4469950A (en) * 1982-03-04 1984-09-04 Varian Associates, Inc. Charged particle beam exposure system utilizing variable line scan
DE3504714A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Lithografiegeraet zur erzeugung von mikrostrukturen

Also Published As

Publication number Publication date
US4853545A (en) 1989-08-01

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