FR2504732A1 - Transistor tunnel a double heterojonction - Google Patents

Transistor tunnel a double heterojonction Download PDF

Info

Publication number
FR2504732A1
FR2504732A1 FR8108341A FR8108341A FR2504732A1 FR 2504732 A1 FR2504732 A1 FR 2504732A1 FR 8108341 A FR8108341 A FR 8108341A FR 8108341 A FR8108341 A FR 8108341A FR 2504732 A1 FR2504732 A1 FR 2504732A1
Authority
FR
France
Prior art keywords
layer
tunnel
semiconductor material
transistor according
tunnel transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8108341A
Other languages
English (en)
French (fr)
Other versions
FR2504732B1 (enExample
Inventor
Trong Linh Nuyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8108341A priority Critical patent/FR2504732A1/fr
Publication of FR2504732A1 publication Critical patent/FR2504732A1/fr
Application granted granted Critical
Publication of FR2504732B1 publication Critical patent/FR2504732B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)
FR8108341A 1981-04-27 1981-04-27 Transistor tunnel a double heterojonction Granted FR2504732A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8108341A FR2504732A1 (fr) 1981-04-27 1981-04-27 Transistor tunnel a double heterojonction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108341A FR2504732A1 (fr) 1981-04-27 1981-04-27 Transistor tunnel a double heterojonction

Publications (2)

Publication Number Publication Date
FR2504732A1 true FR2504732A1 (fr) 1982-10-29
FR2504732B1 FR2504732B1 (enExample) 1985-01-25

Family

ID=9257813

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8108341A Granted FR2504732A1 (fr) 1981-04-27 1981-04-27 Transistor tunnel a double heterojonction

Country Status (1)

Country Link
FR (1) FR2504732A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191201A1 (en) * 1985-01-28 1986-08-20 Koninklijke Philips Electronics N.V. Semiconductor device with bidimensional charge carrier gas
EP0170044A3 (en) * 1984-07-02 1987-08-19 Texas Instruments Incorporated Quantum-coupled device
EP0183474A3 (en) * 1984-11-19 1987-10-21 Fujitsu Limited Semiconductor device
EP0316139A3 (en) * 1987-11-10 1990-01-10 Fujitsu Limited Resonant tunelling barrier structure device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2072114A1 (enExample) * 1969-12-30 1971-09-24 Ibm
FR2394174A1 (fr) * 1977-06-09 1979-01-05 Ibm Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse
GB1573310A (en) * 1977-02-09 1980-08-20 Mullard Ltd Transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2072114A1 (enExample) * 1969-12-30 1971-09-24 Ibm
GB1573310A (en) * 1977-02-09 1980-08-20 Mullard Ltd Transistors
FR2394174A1 (fr) * 1977-06-09 1979-01-05 Ibm Dispositif a semi-conducteur du type transistor a heterojonctions a grande vitesse

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0170044A3 (en) * 1984-07-02 1987-08-19 Texas Instruments Incorporated Quantum-coupled device
EP0183474A3 (en) * 1984-11-19 1987-10-21 Fujitsu Limited Semiconductor device
US4903090A (en) * 1984-11-19 1990-02-20 Fujitsu Limited Semiconductor device
EP0191201A1 (en) * 1985-01-28 1986-08-20 Koninklijke Philips Electronics N.V. Semiconductor device with bidimensional charge carrier gas
EP0316139A3 (en) * 1987-11-10 1990-01-10 Fujitsu Limited Resonant tunelling barrier structure device

Also Published As

Publication number Publication date
FR2504732B1 (enExample) 1985-01-25

Similar Documents

Publication Publication Date Title
US4173763A (en) Heterojunction tunneling base transistor
EP0452661B1 (en) Metal-insulator-metal junction structures with adjustable barrier heights and fabrication method therefor
EP0256360B1 (en) Gated tunnel diode
EP0084393B1 (fr) Dispositif semiconducteur du genre transistor à hétérojonction(s)
EP0881690A1 (fr) Transistor bipolaire stabilisé avec éléments isolants électriques
FR2490874A1 (fr) Transistors du type a grille isolee
EP1243029B1 (fr) Transistor bipolaire à hétérojonction collecteur en haut et procédé de réalisation
CA1245775A (en) Hot electron unipolar transistor with two- dimensional degenerate electron gas base with continuously graded composition compound emitter
US6528370B2 (en) Semiconductor device and method of manufacturing the same
JPH024140B2 (enExample)
FR2508707A1 (fr) Transistor balistique a multiples heterojonctions
EP0566591A1 (en) SEMICONDUCTOR DEVICE.
EP0050064A2 (fr) Transistor à effet de champ à fréquence de coupure élevée
US20070018192A1 (en) Devices incorporating heavily defected semiconductor layers
US5206524A (en) Heterostructure bipolar transistor
US4794444A (en) Ohmic contact and method for making same
US4839714A (en) High-gain photodetectors made from NIPI mesas with selective lateral contacts
FR2504732A1 (fr) Transistor tunnel a double heterojonction
US5569933A (en) Optical controlled resonant tunneling oscillator
US3562606A (en) Subsurface gallium arsenide schottky-type diode and method of fabricating same
CA2055665C (en) Field effect transistor
JPH10107274A (ja) トンネルトランジスタ及びその製造方法
JPH01125985A (ja) 半導体装置
JPS639149A (ja) メタルベ−ストランジスタ
JPH03231424A (ja) 化合物半導体装置の製造方法

Legal Events

Date Code Title Description
ST Notification of lapse