FR2503933B1 - Circuit integre comprenant un reseau de transistors - Google Patents

Circuit integre comprenant un reseau de transistors

Info

Publication number
FR2503933B1
FR2503933B1 FR8206418A FR8206418A FR2503933B1 FR 2503933 B1 FR2503933 B1 FR 2503933B1 FR 8206418 A FR8206418 A FR 8206418A FR 8206418 A FR8206418 A FR 8206418A FR 2503933 B1 FR2503933 B1 FR 2503933B1
Authority
FR
France
Prior art keywords
transistors
network
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8206418A
Other languages
English (en)
Other versions
FR2503933A1 (fr
Inventor
James R Kuo
Maggie Leung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2503933A1 publication Critical patent/FR2503933A1/fr
Application granted granted Critical
Publication of FR2503933B1 publication Critical patent/FR2503933B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/10ROM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR8206418A 1981-04-14 1982-04-14 Circuit integre comprenant un reseau de transistors Expired FR2503933B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/254,334 US4475119A (en) 1981-04-14 1981-04-14 Integrated circuit power transmission array

Publications (2)

Publication Number Publication Date
FR2503933A1 FR2503933A1 (fr) 1982-10-15
FR2503933B1 true FR2503933B1 (fr) 1985-12-13

Family

ID=22963877

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8206418A Expired FR2503933B1 (fr) 1981-04-14 1982-04-14 Circuit integre comprenant un reseau de transistors

Country Status (6)

Country Link
US (1) US4475119A (fr)
JP (1) JPS58165A (fr)
CA (1) CA1183278A (fr)
DE (1) DE3213504A1 (fr)
FR (1) FR2503933B1 (fr)
GB (1) GB2107113B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583111A (en) * 1983-09-09 1986-04-15 Fairchild Semiconductor Corporation Integrated circuit chip wiring arrangement providing reduced circuit inductance and controlled voltage gradients
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS61241964A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd 半導体装置
DE3802821A1 (de) * 1988-01-30 1989-08-03 Bosch Gmbh Robert Leistungstransistor
EP0499063B1 (fr) * 1991-01-22 2005-09-28 Nec Corporation Circuit intégré semi-conducteur encapsulé en résine comprenant une couche conductrice
US5341018A (en) * 1991-09-18 1994-08-23 Nec Corporation Semiconductor integrated circuit device having a plurality of input circuits each including differently sized transistors
US5362989A (en) * 1992-12-16 1994-11-08 Alliedsignal Inc. Electrical isolation for power-saving purposes
JP3178932B2 (ja) * 1993-03-02 2001-06-25 富士通株式会社 半導体集積回路装置
US7268627B2 (en) * 2004-11-03 2007-09-11 Theta Microelectronics, Inc. Pre-matching of distributed and push-pull power transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3452256A (en) * 1967-09-20 1969-06-24 Trw Semiconductors Inc High frequency multi-cell transistor structure
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
US3638202A (en) * 1970-03-19 1972-01-25 Bell Telephone Labor Inc Access circuit arrangement for equalized loading in integrated circuit arrays
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
JPS5165585A (fr) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS60953B2 (ja) * 1977-12-30 1985-01-11 富士通株式会社 半導体集積回路装置
JPS551125A (en) * 1978-06-20 1980-01-07 Toshiba Corp Semiconductor device
JPS5562586A (en) * 1978-10-30 1980-05-12 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
DE3213504A1 (de) 1982-12-02
JPS58165A (ja) 1983-01-05
US4475119A (en) 1984-10-02
FR2503933A1 (fr) 1982-10-15
CA1183278A (fr) 1985-02-26
GB2107113A (en) 1983-04-20
GB2107113B (en) 1985-04-24

Similar Documents

Publication Publication Date Title
DE3682305D1 (de) Integrierte digitale schaltungen.
DE3477448D1 (de) Complementary mos circuit
FI821119A0 (fi) Saett att foerhindra fettlagring hos daeggdjur
NO157039C (no) Abonnentlinjekrets.
DE3751137D1 (de) Entwicklungsvorrichtung.
DE3750250D1 (de) Entwicklungsvorrichtung.
FR2529729B1 (fr) Reseau de bascules
JPS57198450A (en) Photosensitive base
FR2503933B1 (fr) Circuit integre comprenant un reseau de transistors
MX157488A (es) Mejoras a microprocesador de datos digitales a base de circuitos integrados
IE822114L (en) Transistor circuit
DE3482084D1 (de) Integrierte schaltung.
DE3684525D1 (de) Digitale integrierte schaltungen.
DE3273117D1 (de) Bisynchronous protocol communication circuit
DK157468C (da) Diode til monolitisk integreret kreds
FR2501377B1 (fr) Wattheuremetre electronique
FI823709A0 (fi) Kopplingsanordning
KR860005445A (ko) Mos형 집적회로
AT383903B (de) Schaltungsanordnung
FI824311L (fi) Foerfarande foer permanent formande av haor
FI822368A0 (fi) Integrerad styranordning foer hisskorg
DE3274607D1 (en) Transistor circuit
DE3686615D1 (de) Digitale integrierte schaltungen.
FR2503955B1 (fr) Circuit demodulateur
JPS57183068A (en) Integrated circuit lateral transistor

Legal Events

Date Code Title Description
ST Notification of lapse