FR2499318A1 - Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede - Google Patents
Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede Download PDFInfo
- Publication number
- FR2499318A1 FR2499318A1 FR8102133A FR8102133A FR2499318A1 FR 2499318 A1 FR2499318 A1 FR 2499318A1 FR 8102133 A FR8102133 A FR 8102133A FR 8102133 A FR8102133 A FR 8102133A FR 2499318 A1 FR2499318 A1 FR 2499318A1
- Authority
- FR
- France
- Prior art keywords
- contact structure
- surface layer
- layer
- titanium
- gaalas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010936 titanium Substances 0.000 title claims abstract description 33
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 32
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims description 4
- 229910052733 gallium Inorganic materials 0.000 title claims description 4
- 230000015572 biosynthetic process Effects 0.000 title description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 33
- 239000010408 film Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102133A FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102133A FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2499318A1 true FR2499318A1 (fr) | 1982-08-06 |
| FR2499318B1 FR2499318B1 (cg-RX-API-DMAC7.html) | 1984-02-24 |
Family
ID=9254830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102133A Granted FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2499318A1 (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0184117A3 (en) * | 1984-12-03 | 1986-12-03 | Siemens Aktiengesellschaft Berlin Und Munchen | Radiation-emitting semiconductor diode having a small-area contact with a larger area surface protection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2217804A1 (cg-RX-API-DMAC7.html) * | 1973-02-13 | 1974-09-06 | Communications Satellite Corp | |
| FR2394894A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Dispositif de prise de contact sur un element semiconducteur |
-
1981
- 1981-02-04 FR FR8102133A patent/FR2499318A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2217804A1 (cg-RX-API-DMAC7.html) * | 1973-02-13 | 1974-09-06 | Communications Satellite Corp | |
| FR2394894A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Dispositif de prise de contact sur un element semiconducteur |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0184117A3 (en) * | 1984-12-03 | 1986-12-03 | Siemens Aktiengesellschaft Berlin Und Munchen | Radiation-emitting semiconductor diode having a small-area contact with a larger area surface protection |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2499318B1 (cg-RX-API-DMAC7.html) | 1984-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |