FR2499318B1 - - Google Patents
Info
- Publication number
- FR2499318B1 FR2499318B1 FR8102133A FR8102133A FR2499318B1 FR 2499318 B1 FR2499318 B1 FR 2499318B1 FR 8102133 A FR8102133 A FR 8102133A FR 8102133 A FR8102133 A FR 8102133A FR 2499318 B1 FR2499318 B1 FR 2499318B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102133A FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102133A FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2499318A1 FR2499318A1 (fr) | 1982-08-06 |
| FR2499318B1 true FR2499318B1 (cg-RX-API-DMAC7.html) | 1984-02-24 |
Family
ID=9254830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102133A Granted FR2499318A1 (fr) | 1981-02-04 | 1981-02-04 | Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2499318A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3444019A1 (de) * | 1984-12-03 | 1986-06-05 | Siemens AG, 1000 Berlin und 8000 München | Strahlung erzeugende halbleiterdiode mit einem kleinflaechigen kontakt mit grossflaechigerem oberflaechenschutz |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949463A (en) * | 1973-02-13 | 1976-04-13 | Communications Satellite Corporation (Comsat) | Method of applying an anti-reflective coating to a solar cell |
| FR2394894A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Dispositif de prise de contact sur un element semiconducteur |
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1981
- 1981-02-04 FR FR8102133A patent/FR2499318A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2499318A1 (fr) | 1982-08-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |