FR2496982A1 - Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus - Google Patents

Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus Download PDF

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Publication number
FR2496982A1
FR2496982A1 FR8027423A FR8027423A FR2496982A1 FR 2496982 A1 FR2496982 A1 FR 2496982A1 FR 8027423 A FR8027423 A FR 8027423A FR 8027423 A FR8027423 A FR 8027423A FR 2496982 A1 FR2496982 A1 FR 2496982A1
Authority
FR
France
Prior art keywords
metal layer
self
effect transistors
metal
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8027423A
Other languages
English (en)
French (fr)
Other versions
FR2496982B1 (enExample
Inventor
Didier Meignant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR8027423A priority Critical patent/FR2496982A1/fr
Priority to US06/327,374 priority patent/US4429452A/en
Priority to DE8181201350T priority patent/DE3169122D1/de
Priority to EP81201350A priority patent/EP0054998B1/fr
Priority to JP56206807A priority patent/JPS57133682A/ja
Publication of FR2496982A1 publication Critical patent/FR2496982A1/fr
Application granted granted Critical
Publication of FR2496982B1 publication Critical patent/FR2496982B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
FR8027423A 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus Granted FR2496982A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8027423A FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
US06/327,374 US4429452A (en) 1980-12-24 1981-12-04 Method of manufacturing field-effect transistors with self-aligned grid and transistors thus obtained
DE8181201350T DE3169122D1 (en) 1980-12-24 1981-12-11 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process
EP81201350A EP0054998B1 (fr) 1980-12-24 1981-12-11 Procédé de fabrication de transistors à effet de champ à grille auto-alignée et transistors ainsi obtenus
JP56206807A JPS57133682A (en) 1980-12-24 1981-12-21 Method of producing field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8027423A FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Publications (2)

Publication Number Publication Date
FR2496982A1 true FR2496982A1 (fr) 1982-06-25
FR2496982B1 FR2496982B1 (enExample) 1984-08-24

Family

ID=9249463

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8027423A Granted FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Country Status (5)

Country Link
US (1) US4429452A (enExample)
EP (1) EP0054998B1 (enExample)
JP (1) JPS57133682A (enExample)
DE (1) DE3169122D1 (enExample)
FR (1) FR2496982A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532471A1 (fr) * 1982-09-01 1984-03-02 Labo Electronique Physique Procede de realisation d'ouverture de faible dimension, utilisation de ce procede pour la fabrication de transistors a effet de champ, a grille alignee submicronique, et transistors ainsi obtenus
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
US4651179A (en) * 1983-01-21 1987-03-17 Rca Corporation Low resistance gallium arsenide field effect transistor
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS59177970A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH065682B2 (ja) * 1983-05-09 1994-01-19 日本電気株式会社 半導体装置の製造方法
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US5185293A (en) * 1992-04-10 1993-02-09 Eastman Kodak Company Method of forming and aligning patterns in deposted overlaying on GaAs
US5432119A (en) * 1994-01-31 1995-07-11 Hughes Aircraft Company High yield electron-beam gate fabrication method for sub-micron gate FETS
US11234698B2 (en) 2019-12-19 2022-02-01 Cilag Gmbh International Stapling system comprising a clamp lockout and a firing lockout

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678573A (en) 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3764865A (en) 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
NL7007171A (enExample) 1970-05-16 1971-11-18
US3675313A (en) 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor
US3920861A (en) 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3866310A (en) 1973-09-07 1975-02-18 Westinghouse Electric Corp Method for making the self-aligned gate contact of a semiconductor device
US4075652A (en) 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS5131186A (enExample) * 1974-09-11 1976-03-17 Hitachi Ltd
US3898353A (en) 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US4063992A (en) 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
IT1041193B (it) 1975-08-08 1980-01-10 Selenia Ind Elettroniche Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor
GB1563913A (en) * 1975-12-12 1980-04-02 Hughes Aircraft Co Method of making schottky-barrier gallium arsenide field effect devices
US4145459A (en) 1978-02-02 1979-03-20 Rca Corporation Method of making a short gate field effect transistor
DE2835642A1 (de) 1978-08-14 1980-02-28 Siemens Ag Monolithische integrierte schaltung mit feldeffekttransistoren und verfahren zu ihrer herstellung
US4261095A (en) 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern
US4266333A (en) 1979-04-27 1981-05-12 Rca Corporation Method of making a Schottky barrier field effect transistor
US4318759A (en) 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/80 *

Also Published As

Publication number Publication date
JPS57133682A (en) 1982-08-18
EP0054998A1 (fr) 1982-06-30
US4429452A (en) 1984-02-07
FR2496982B1 (enExample) 1984-08-24
EP0054998B1 (fr) 1985-02-20
DE3169122D1 (en) 1985-03-28

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