DE3169122D1 - Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process - Google Patents

Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process

Info

Publication number
DE3169122D1
DE3169122D1 DE8181201350T DE3169122T DE3169122D1 DE 3169122 D1 DE3169122 D1 DE 3169122D1 DE 8181201350 T DE8181201350 T DE 8181201350T DE 3169122 T DE3169122 T DE 3169122T DE 3169122 D1 DE3169122 D1 DE 3169122D1
Authority
DE
Germany
Prior art keywords
transistors
manufacture
gate electrode
field
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181201350T
Other languages
German (de)
English (en)
Inventor
Didier Meignant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3169122D1 publication Critical patent/DE3169122D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
DE8181201350T 1980-12-24 1981-12-11 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process Expired DE3169122D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8027423A FR2496982A1 (fr) 1980-12-24 1980-12-24 Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus

Publications (1)

Publication Number Publication Date
DE3169122D1 true DE3169122D1 (en) 1985-03-28

Family

ID=9249463

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181201350T Expired DE3169122D1 (en) 1980-12-24 1981-12-11 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process

Country Status (5)

Country Link
US (1) US4429452A (enExample)
EP (1) EP0054998B1 (enExample)
JP (1) JPS57133682A (enExample)
DE (1) DE3169122D1 (enExample)
FR (1) FR2496982A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532471A1 (fr) * 1982-09-01 1984-03-02 Labo Electronique Physique Procede de realisation d'ouverture de faible dimension, utilisation de ce procede pour la fabrication de transistors a effet de champ, a grille alignee submicronique, et transistors ainsi obtenus
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
US4651179A (en) * 1983-01-21 1987-03-17 Rca Corporation Low resistance gallium arsenide field effect transistor
JPS59165461A (ja) * 1983-03-10 1984-09-18 Oki Electric Ind Co Ltd ショットキ接合形化合物半導体電界効果トランジスタの製造方法
JPS59177970A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH065682B2 (ja) * 1983-05-09 1994-01-19 日本電気株式会社 半導体装置の製造方法
US4888626A (en) * 1985-03-07 1989-12-19 The United States Of America As Represented By The Secretary Of The Navy Self-aligned gaas fet with low 1/f noise
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US5185293A (en) * 1992-04-10 1993-02-09 Eastman Kodak Company Method of forming and aligning patterns in deposted overlaying on GaAs
US5432119A (en) * 1994-01-31 1995-07-11 Hughes Aircraft Company High yield electron-beam gate fabrication method for sub-micron gate FETS
US11234698B2 (en) 2019-12-19 2022-02-01 Cilag Gmbh International Stapling system comprising a clamp lockout and a firing lockout

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678573A (en) 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3764865A (en) 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
NL7007171A (enExample) 1970-05-16 1971-11-18
US3675313A (en) 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor
US3920861A (en) 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3866310A (en) 1973-09-07 1975-02-18 Westinghouse Electric Corp Method for making the self-aligned gate contact of a semiconductor device
US4075652A (en) 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
JPS5131186A (enExample) * 1974-09-11 1976-03-17 Hitachi Ltd
US3898353A (en) 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US4063992A (en) 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
IT1041193B (it) 1975-08-08 1980-01-10 Selenia Ind Elettroniche Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor
GB1563913A (en) * 1975-12-12 1980-04-02 Hughes Aircraft Co Method of making schottky-barrier gallium arsenide field effect devices
US4145459A (en) 1978-02-02 1979-03-20 Rca Corporation Method of making a short gate field effect transistor
US4194285A (en) * 1978-06-15 1980-03-25 Rca Corporation Method of making a field effect transistor
DE2835642A1 (de) 1978-08-14 1980-02-28 Siemens Ag Monolithische integrierte schaltung mit feldeffekttransistoren und verfahren zu ihrer herstellung
US4261095A (en) 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
JPS5591833A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Method of forming submicron pattern
US4266333A (en) 1979-04-27 1981-05-12 Rca Corporation Method of making a Schottky barrier field effect transistor
US4318759A (en) 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits

Also Published As

Publication number Publication date
US4429452A (en) 1984-02-07
EP0054998A1 (fr) 1982-06-30
FR2496982B1 (enExample) 1984-08-24
JPS57133682A (en) 1982-08-18
FR2496982A1 (fr) 1982-06-25
EP0054998B1 (fr) 1985-02-20

Similar Documents

Publication Publication Date Title
DE2967090D1 (en) Process for the manufacture of field-effect transistors
EP0035126A3 (en) Improved bipolar transistor and process for fabricating same
JPS54157089A (en) Method of fabricating short channel transistor structure
DE3569634D1 (en) Method of fabricating an insulated gate type field-effect transistor
JPS5239381A (en) Insulated gate fet transistor
DE3262032D1 (en) Bipolar transistor controlled by field effect having an insulated gate electrode
AU555504B2 (en) Treatment of myotonic conditions with tetrahydroisoxazolo (5,4-c) pyridin-3-ol
JPS5618470A (en) Method of manufacturing closed gate most transistor
JPS51132779A (en) Production method of vertical-junction type field-effect transistor
JPS5372476A (en) Method of producing insulated gate fet semiconductor
DE3260514D1 (en) Planar field-effect transistor having elektrodes comprising metallised holes, and process for manufacturing the transistor
CA994923A (en) Method for fabricating double-diffused, lateral transistors and the resulting structure
DE2967441D1 (en) Method of producing field-effect transistors of the mos type with self-aligned gate and contact vias
JPS54125986A (en) Semiconductor including insulated gate type transistor
DE3166961D1 (en) Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained
AU536540B2 (en) Insulated-gate field-effect transistor and method of of manufacturing same
DK536779A (da) Substituerede cyanamider med gungicid virkning
JPS5322380A (en) Selffcentering gate fet transistor and method of producing same
EP0052038A3 (en) Lateral transistor and method for its manufacture
JPS52122087A (en) Method of producing mosfet transistor
JPS51114074A (en) Insulation gate type field effect transistor
DE3366468D1 (en) Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process
JPS56146274A (en) Method of manufacturing bipolar transistor
PL214277A1 (pl) Sposob wytwarzania agregatow bakteryjnych komorek o zwiekszonej twardosci czastek
PL196355A1 (pl) Sposob mikrobiologicznego wytwarzania mieszaniny androstadieno-1,4-dionu-3,17 i androsteno-4-dionu-3,17

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee