FR2495378B1 - - Google Patents
Info
- Publication number
- FR2495378B1 FR2495378B1 FR8122584A FR8122584A FR2495378B1 FR 2495378 B1 FR2495378 B1 FR 2495378B1 FR 8122584 A FR8122584 A FR 8122584A FR 8122584 A FR8122584 A FR 8122584A FR 2495378 B1 FR2495378 B1 FR 2495378B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21253480A | 1980-12-03 | 1980-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2495378A1 FR2495378A1 (fr) | 1982-06-04 |
| FR2495378B1 true FR2495378B1 (de) | 1984-01-13 |
Family
ID=22791421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8122584A Granted FR2495378A1 (fr) | 1980-12-03 | 1981-12-02 | Circuit de protection, contre les tensions transitoires, comprenant un thyristor (scr), pour circuits integres |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6048906B2 (de) |
| CA (1) | CA1161968A (de) |
| DE (1) | DE3147505A1 (de) |
| FR (1) | FR2495378A1 (de) |
| GB (1) | GB2088634B (de) |
| IT (1) | IT1139888B (de) |
| MY (1) | MY8500877A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
| IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
| JPS62295448A (ja) * | 1986-04-11 | 1987-12-22 | テキサス インスツルメンツ インコ−ポレイテツド | 静電気に対する保護装置を備えた集積回路 |
| US9281682B2 (en) * | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3940785A (en) * | 1974-05-06 | 1976-02-24 | Sprague Electric Company | Semiconductor I.C. with protection against reversed power supply |
| JPS55113358A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
-
1981
- 1981-11-26 GB GB8135659A patent/GB2088634B/en not_active Expired
- 1981-12-01 DE DE19813147505 patent/DE3147505A1/de active Granted
- 1981-12-01 IT IT25385/81A patent/IT1139888B/it active
- 1981-12-01 CA CA000391274A patent/CA1161968A/en not_active Expired
- 1981-12-02 JP JP56195101A patent/JPS6048906B2/ja not_active Expired
- 1981-12-02 FR FR8122584A patent/FR2495378A1/fr active Granted
-
1985
- 1985-12-30 MY MY877/85A patent/MY8500877A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| MY8500877A (en) | 1985-12-31 |
| DE3147505C2 (de) | 1991-02-28 |
| JPS57120366A (en) | 1982-07-27 |
| DE3147505A1 (de) | 1982-10-21 |
| IT8125385A0 (it) | 1981-12-01 |
| FR2495378A1 (fr) | 1982-06-04 |
| CA1161968A (en) | 1984-02-07 |
| GB2088634B (en) | 1984-08-15 |
| IT1139888B (it) | 1986-09-24 |
| GB2088634A (en) | 1982-06-09 |
| JPS6048906B2 (ja) | 1985-10-30 |