FR2488455B1 - Dispositif muni d'une diode laser semi-conductrice - Google Patents

Dispositif muni d'une diode laser semi-conductrice

Info

Publication number
FR2488455B1
FR2488455B1 FR8114947A FR8114947A FR2488455B1 FR 2488455 B1 FR2488455 B1 FR 2488455B1 FR 8114947 A FR8114947 A FR 8114947A FR 8114947 A FR8114947 A FR 8114947A FR 2488455 B1 FR2488455 B1 FR 2488455B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser diode
diode
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8114947A
Other languages
English (en)
Other versions
FR2488455A1 (fr
Inventor
Giok Djan Khoe
Christiaan Hendrik Fran Velzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2488455A1 publication Critical patent/FR2488455A1/fr
Application granted granted Critical
Publication of FR2488455B1 publication Critical patent/FR2488455B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
FR8114947A 1980-08-06 1981-07-31 Dispositif muni d'une diode laser semi-conductrice Expired FR2488455B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004472A NL8004472A (nl) 1980-08-06 1980-08-06 Inrichting voorzien van een halfgeleiderlaserdiode.

Publications (2)

Publication Number Publication Date
FR2488455A1 FR2488455A1 (fr) 1982-02-12
FR2488455B1 true FR2488455B1 (fr) 1986-11-14

Family

ID=19835712

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8114947A Expired FR2488455B1 (fr) 1980-08-06 1981-07-31 Dispositif muni d'une diode laser semi-conductrice

Country Status (8)

Country Link
US (1) US4427261A (fr)
JP (1) JPS6342873B2 (fr)
CA (1) CA1157930A (fr)
DE (1) DE3131024A1 (fr)
FR (1) FR2488455B1 (fr)
GB (1) GB2081964B (fr)
NL (1) NL8004472A (fr)
SE (1) SE457037B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8005134A (nl) * 1980-09-12 1982-04-01 Philips Nv Optisch transmissiesysteem.
JPS6164182A (ja) * 1984-09-05 1986-04-02 Matsushita Electric Ind Co Ltd 光帰還型半導体レ−ザ装置
JPS6179286A (ja) * 1984-09-24 1986-04-22 ゼロツクス　コーポレーシヨン レーザダイオード及びそのモードホツピング防止方法
FR2577077B1 (fr) * 1985-02-05 1987-02-27 Favre Francois Laser a semi-conducteur a largeur spectrale reduite
EP0220455A1 (fr) * 1985-09-24 1987-05-06 Siemens Aktiengesellschaft Dispositif de couplage entre une diode laser et un guide d'onde monomode
NL8502625A (nl) * 1985-09-26 1987-04-16 Philips Nv Optisch transmissiesysteem bevattende een stralingsbron en een meervoudig beklede monomode optische transmissievezel met een negatieve stap in het brekingsindexprofiel.
US4817109A (en) * 1985-12-10 1989-03-28 501 Sharp Kabushiki Kaisha External resonator type semiconductor laser apparatus
US4787086A (en) * 1986-05-19 1988-11-22 American Telephone And Telegraph Company, At&T Bell Laboratories High-power, fundamental transverse mode laser
DE3719868A1 (de) * 1987-06-13 1988-12-22 Messerschmitt Boelkow Blohm Laserdiode
JPH0325987A (ja) * 1989-06-23 1991-02-04 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レーザ光源装置
US5309542A (en) * 1991-09-18 1994-05-03 International Business Machines Corporation Fiber optic transmitter modification for improved extinction ratio
JPH0614063U (ja) * 1992-02-19 1994-02-22 冨士シール工業株式会社 開封部を有する熱収縮性フィルム包装体
DE4340025A1 (de) * 1992-12-23 1994-06-30 Kommunikations Elektronik Übertragungssystem zur Übertragung optischer Signale
US5359447A (en) * 1993-06-25 1994-10-25 Hewlett-Packard Company Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
US6081381A (en) * 1998-10-26 2000-06-27 Polametrics, Inc. Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source
JP3940504B2 (ja) * 1998-10-30 2007-07-04 株式会社東芝 光ファイバ伝送式レーザ装置、パルスレーザ発振器および光ファイバ導光装置
CN103940456B (zh) * 2014-04-11 2016-08-17 北京理工大学 一种干涉型反射探针式光纤微传感器及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941316B2 (ja) * 1975-05-17 1984-10-05 日本電気株式会社 高速変調が可能な半導体レ−ザ装置
US4079339A (en) * 1975-05-17 1978-03-14 Nippon Electric Company, Ltd. Light self-injecting semiconductor laser device

Also Published As

Publication number Publication date
JPS5754384A (fr) 1982-03-31
CA1157930A (fr) 1983-11-29
GB2081964B (en) 1983-08-17
SE8104647L (sv) 1982-02-07
DE3131024A1 (de) 1982-03-25
SE457037B (sv) 1988-11-21
US4427261A (en) 1984-01-24
JPS6342873B2 (fr) 1988-08-25
NL8004472A (nl) 1982-03-01
GB2081964A (en) 1982-02-24
FR2488455A1 (fr) 1982-02-12

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Legal Events

Date Code Title Description
ST Notification of lapse