FR2488049A1 - Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication - Google Patents

Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication Download PDF

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Publication number
FR2488049A1
FR2488049A1 FR8016947A FR8016947A FR2488049A1 FR 2488049 A1 FR2488049 A1 FR 2488049A1 FR 8016947 A FR8016947 A FR 8016947A FR 8016947 A FR8016947 A FR 8016947A FR 2488049 A1 FR2488049 A1 FR 2488049A1
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FR
France
Prior art keywords
layer
contact
metal
source
semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8016947A
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English (en)
French (fr)
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FR2488049B1 (en:Method
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Individual
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Individual
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Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9244763&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2488049(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Priority to FR8016947A priority Critical patent/FR2488049A1/fr
Priority to US06/283,631 priority patent/US4441187A/en
Priority to EP81401160A priority patent/EP0045678B1/fr
Priority to CA000382143A priority patent/CA1177149A/en
Priority to DE8181401160T priority patent/DE3168477D1/de
Priority to JP56120001A priority patent/JPS5753990A/ja
Publication of FR2488049A1 publication Critical patent/FR2488049A1/fr
Application granted granted Critical
Publication of FR2488049B1 publication Critical patent/FR2488049B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR8016947A 1980-07-31 1980-07-31 Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication Granted FR2488049A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8016947A FR2488049A1 (fr) 1980-07-31 1980-07-31 Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication
US06/283,631 US4441187A (en) 1980-07-31 1981-07-15 A semiconductor laser light source
EP81401160A EP0045678B1 (fr) 1980-07-31 1981-07-21 Source laser à jonction semiconductrice utilisant des diodes Schottky, et procédé de fabrication
CA000382143A CA1177149A (en) 1980-07-31 1981-07-21 Light source with a semiconductor junction, particularly a laser source and a process for producing such a source
DE8181401160T DE3168477D1 (en) 1980-07-31 1981-07-21 Laser source with semiconductor junction using schottky diodes, and production method
JP56120001A JPS5753990A (en:Method) 1980-07-31 1981-07-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016947A FR2488049A1 (fr) 1980-07-31 1980-07-31 Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2488049A1 true FR2488049A1 (fr) 1982-02-05
FR2488049B1 FR2488049B1 (en:Method) 1984-01-06

Family

ID=9244763

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016947A Granted FR2488049A1 (fr) 1980-07-31 1980-07-31 Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication

Country Status (6)

Country Link
US (1) US4441187A (en:Method)
EP (1) EP0045678B1 (en:Method)
JP (1) JPS5753990A (en:Method)
CA (1) CA1177149A (en:Method)
DE (1) DE3168477D1 (en:Method)
FR (1) FR2488049A1 (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
EP0170481B1 (en) * 1984-07-24 1991-01-16 Nec Corporation Semiconductor light emitting device
DE3838016A1 (de) * 1988-11-09 1990-05-10 Siemens Ag Halbleiterlaser im system gaa1inas
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
US5388116A (en) * 1992-09-25 1995-02-07 The Furukawa Electric Co., Ltd. Semiconductor laser device
JP4189610B2 (ja) 1998-05-08 2008-12-03 ソニー株式会社 光電変換素子およびその製造方法
US6228673B1 (en) * 1999-05-13 2001-05-08 Hughes Electronics Corporation Method of fabricating a surface coupled InGaAs photodetector
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
RU2230411C2 (ru) * 2002-04-16 2004-06-10 Федеральное государственное унитарное предприятие "Научно-исследовательский институт "Полюс" им.М.Ф.Стельмаха Инжекционный лазер
CN100347866C (zh) * 2002-07-22 2007-11-07 克里公司 包括阻挡层/子层的发光二极管及其制造方法
JP2009158550A (ja) * 2007-12-25 2009-07-16 Sony Corp 半導体発光素子及びこれを用いた表示装置
DE102008014092A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen
DE102016125857B4 (de) * 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149175A (en) * 1975-06-20 1979-04-10 Matsushita Electric Industrial Co., Ltd. Solidstate light-emitting device
US4206468A (en) * 1976-05-11 1980-06-03 Thomson-Csf Contacting structure on a semiconductor arrangement
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
US4182995A (en) * 1978-03-16 1980-01-08 Rca Corporation Laser diode with thermal conducting, current confining film
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow

Also Published As

Publication number Publication date
EP0045678A2 (fr) 1982-02-10
JPS5753990A (en:Method) 1982-03-31
DE3168477D1 (en) 1985-03-07
EP0045678B1 (fr) 1985-01-23
CA1177149A (en) 1984-10-30
EP0045678A3 (en) 1982-02-24
US4441187A (en) 1984-04-03
FR2488049B1 (en:Method) 1984-01-06

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