DE3168477D1 - Laser source with semiconductor junction using schottky diodes, and production method - Google Patents
Laser source with semiconductor junction using schottky diodes, and production methodInfo
- Publication number
- DE3168477D1 DE3168477D1 DE8181401160T DE3168477T DE3168477D1 DE 3168477 D1 DE3168477 D1 DE 3168477D1 DE 8181401160 T DE8181401160 T DE 8181401160T DE 3168477 T DE3168477 T DE 3168477T DE 3168477 D1 DE3168477 D1 DE 3168477D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- laser source
- semiconductor junction
- schottky diodes
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8016947A FR2488049A1 (fr) | 1980-07-31 | 1980-07-31 | Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3168477D1 true DE3168477D1 (en) | 1985-03-07 |
Family
ID=9244763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181401160T Expired DE3168477D1 (en) | 1980-07-31 | 1981-07-21 | Laser source with semiconductor junction using schottky diodes, and production method |
Country Status (6)
Country | Link |
---|---|
US (1) | US4441187A (de) |
EP (1) | EP0045678B1 (de) |
JP (1) | JPS5753990A (de) |
CA (1) | CA1177149A (de) |
DE (1) | DE3168477D1 (de) |
FR (1) | FR2488049A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
CA1251549A (en) * | 1984-07-24 | 1989-03-21 | Akira Suzuki | Semiconductor light emitting device |
DE3838016A1 (de) * | 1988-11-09 | 1990-05-10 | Siemens Ag | Halbleiterlaser im system gaa1inas |
US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
EP0589727B1 (de) * | 1992-09-25 | 1997-03-19 | The Furukawa Electric Co., Ltd. | Halbleiterlaservorrichtung |
JP4189610B2 (ja) | 1998-05-08 | 2008-12-03 | ソニー株式会社 | 光電変換素子およびその製造方法 |
US6228673B1 (en) * | 1999-05-13 | 2001-05-08 | Hughes Electronics Corporation | Method of fabricating a surface coupled InGaAs photodetector |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US7211833B2 (en) * | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US20030090103A1 (en) * | 2001-11-09 | 2003-05-15 | Thomas Becker | Direct mailing device |
CA2492249A1 (en) * | 2002-07-22 | 2004-01-29 | Cree, Inc. | Light emitting diode including barrier layers and manufacturing methods therefor |
JP2009158550A (ja) * | 2007-12-25 | 2009-07-16 | Sony Corp | 半導体発光素子及びこれを用いた表示装置 |
DE102008014092A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen |
DE102016125857B4 (de) | 2016-12-29 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4149175A (en) * | 1975-06-20 | 1979-04-10 | Matsushita Electric Industrial Co., Ltd. | Solidstate light-emitting device |
US4048627A (en) * | 1975-11-17 | 1977-09-13 | Rca Corporation | Electroluminescent semiconductor device having a restricted current flow |
US4206468A (en) * | 1976-05-11 | 1980-06-03 | Thomson-Csf | Contacting structure on a semiconductor arrangement |
FR2394894A1 (fr) * | 1977-06-17 | 1979-01-12 | Thomson Csf | Dispositif de prise de contact sur un element semiconducteur |
US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
-
1980
- 1980-07-31 FR FR8016947A patent/FR2488049A1/fr active Granted
-
1981
- 1981-07-15 US US06/283,631 patent/US4441187A/en not_active Expired - Lifetime
- 1981-07-21 CA CA000382143A patent/CA1177149A/en not_active Expired
- 1981-07-21 DE DE8181401160T patent/DE3168477D1/de not_active Expired
- 1981-07-21 EP EP81401160A patent/EP0045678B1/de not_active Expired
- 1981-07-30 JP JP56120001A patent/JPS5753990A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5753990A (de) | 1982-03-31 |
US4441187A (en) | 1984-04-03 |
CA1177149A (en) | 1984-10-30 |
FR2488049A1 (fr) | 1982-02-05 |
EP0045678A2 (de) | 1982-02-10 |
EP0045678B1 (de) | 1985-01-23 |
EP0045678A3 (en) | 1982-02-24 |
FR2488049B1 (de) | 1984-01-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8331 | Complete revocation |