DE3684247D1 - Vorrichtung mit dehnungsinduzierter zone. - Google Patents
Vorrichtung mit dehnungsinduzierter zone.Info
- Publication number
- DE3684247D1 DE3684247D1 DE8686116018T DE3684247T DE3684247D1 DE 3684247 D1 DE3684247 D1 DE 3684247D1 DE 8686116018 T DE8686116018 T DE 8686116018T DE 3684247 T DE3684247 T DE 3684247T DE 3684247 D1 DE3684247 D1 DE 3684247D1
- Authority
- DE
- Germany
- Prior art keywords
- stretch
- induced zone
- induced
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79915485A | 1985-11-18 | 1985-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3684247D1 true DE3684247D1 (de) | 1992-04-16 |
Family
ID=25175170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686116018T Expired - Lifetime DE3684247D1 (de) | 1985-11-18 | 1986-11-18 | Vorrichtung mit dehnungsinduzierter zone. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4772924A (de) |
EP (1) | EP0224189B1 (de) |
JP (1) | JPS62128183A (de) |
CA (1) | CA1282671C (de) |
DE (1) | DE3684247D1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE114386T1 (de) * | 1987-12-23 | 1994-12-15 | British Telecomm | Halbleiterheterostruktur. |
CA1314614C (en) * | 1988-06-06 | 1993-03-16 | Clyde George Bethea | Quantum-well radiation detector |
US5256550A (en) * | 1988-11-29 | 1993-10-26 | Hewlett-Packard Company | Fabricating a semiconductor device with strained Si1-x Gex layer |
US5016064A (en) * | 1989-09-25 | 1991-05-14 | Motorola, Inc. | Quantom well structure having enhanced conductivity |
US4952792A (en) * | 1989-10-13 | 1990-08-28 | At&T Bell Laboratories | Devices employing internally strained asymmetric quantum wells |
US5012302A (en) * | 1990-03-30 | 1991-04-30 | Motorola, Inc. | Enhanced conductivity quantum well having resonant charge coupling |
US5081633A (en) * | 1990-05-31 | 1992-01-14 | Applied Solar Energy Corporation | Semiconductor laser diode |
US5126553A (en) * | 1990-11-28 | 1992-06-30 | Bell Communications Research, Inc. | Bistable optically switchable resonant-tunneling device and its use in signal processing |
US5132746A (en) * | 1991-01-04 | 1992-07-21 | International Business Machines Corporation | Biaxial-stress barrier shifts in pseudomorphic tunnel devices |
US5523592A (en) * | 1993-02-03 | 1996-06-04 | Hitachi, Ltd. | Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same |
US5329257A (en) * | 1993-04-30 | 1994-07-12 | International Business Machines Corproation | SiGe transferred electron device and oscillator using same |
EP0663699B1 (de) * | 1993-12-20 | 1998-04-22 | Nec Corporation | Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente |
JP2874570B2 (ja) * | 1993-12-20 | 1999-03-24 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP2701754B2 (ja) * | 1994-10-03 | 1998-01-21 | 日本電気株式会社 | シリコン受光素子の製造方法 |
JP2748917B2 (ja) * | 1996-03-22 | 1998-05-13 | 日本電気株式会社 | 半導体装置 |
DE19620761A1 (de) * | 1996-05-23 | 1997-11-27 | Daimler Benz Ag | Optoelektrisches Bauelement mit einer modulationsdotierten Schichtstruktur |
KR19990023221A (ko) | 1997-08-20 | 1999-03-25 | 포만 제프리 엘 | 감광성 소자, 능동 픽셀 센서 소자, 능동 픽셀 센서 감광성 소자 및 능동 픽셀 센서 장치 |
US6087683A (en) * | 1998-07-31 | 2000-07-11 | Lucent Technologies | Silicon germanium heterostructure bipolar transistor with indium doped base |
GB0002958D0 (en) | 2000-02-09 | 2000-03-29 | Cambridge Display Tech Ltd | Optoelectronic devices |
AU2002368035A1 (en) | 2002-06-19 | 2004-01-06 | Massachusetts Institute Of Technology | Ge photodetectors |
US7233051B2 (en) * | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US7755079B2 (en) * | 2007-08-17 | 2010-07-13 | Sandia Corporation | Strained-layer superlattice focal plane array having a planar structure |
US8810996B2 (en) | 2010-11-22 | 2014-08-19 | The Trustees Of The Stevens Institute Of Technology | Inkjet-printed flexible electronic components from graphene oxide |
US8878120B2 (en) | 2010-12-13 | 2014-11-04 | The Trustees Of The Stevens Institute Of Technology | Active bandgap tuning of graphene for tunable photodetection applications |
US9738526B2 (en) | 2012-09-06 | 2017-08-22 | The Trustees Of The Stevens Institute Of Technology | Popcorn-like growth of graphene-carbon nanotube multi-stack hybrid three-dimensional architecture for energy storage devices |
US9178129B2 (en) | 2012-10-15 | 2015-11-03 | The Trustees Of The Stevens Institute Of Technology | Graphene-based films in sensor applications |
US20140205841A1 (en) | 2013-01-18 | 2014-07-24 | Hongwei Qiu | Granules of graphene oxide by spray drying |
US9573814B2 (en) | 2013-02-20 | 2017-02-21 | The Trustees Of The Stevens Institute Of Technology | High-throughput graphene printing and selective transfer using a localized laser heating technique |
DE102015108402B4 (de) * | 2015-05-28 | 2021-03-18 | Infineon Technologies Ag | Halbleiterbauelemente, ein Fluidsensor und ein Verfahren zum Bilden eines Halbleiterbauelements |
US11330984B2 (en) | 2015-06-19 | 2022-05-17 | The Trustees Of The Stevens Institute Of Technology | Wearable graphene sensors |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US278474A (en) * | 1883-05-29 | Adjustable coupling for harness | ||
US529455A (en) * | 1893-10-14 | 1894-11-20 | Detachably securing gun-barrels to stocks | |
US3626257A (en) * | 1969-04-01 | 1971-12-07 | Ibm | Semiconductor device with superlattice region |
JPS5421294A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Avalanche photo diode |
US4278474A (en) * | 1980-03-25 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Device for conversion of electromagnetic radiation into electrical current |
US4616241A (en) * | 1983-03-22 | 1986-10-07 | The United States Of America As Represented By The United States Department Of Energy | Superlattice optical device |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
US4529455A (en) * | 1983-10-28 | 1985-07-16 | At&T Bell Laboratories | Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy |
JPS61226973A (ja) * | 1985-04-01 | 1986-10-08 | Hitachi Ltd | アバランシエホトダイオ−ド |
JPS6262564A (ja) * | 1985-09-12 | 1987-03-19 | Fujitsu Ltd | 半導体受光素子 |
-
1986
- 1986-11-17 CA CA000523106A patent/CA1282671C/en not_active Expired - Lifetime
- 1986-11-18 JP JP61273074A patent/JPS62128183A/ja active Pending
- 1986-11-18 EP EP86116018A patent/EP0224189B1/de not_active Expired - Lifetime
- 1986-11-18 DE DE8686116018T patent/DE3684247D1/de not_active Expired - Lifetime
-
1987
- 1987-11-25 US US07/129,942 patent/US4772924A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0224189A3 (en) | 1989-05-31 |
US4772924A (en) | 1988-09-20 |
JPS62128183A (ja) | 1987-06-10 |
CA1282671C (en) | 1991-04-09 |
EP0224189A2 (de) | 1987-06-03 |
EP0224189B1 (de) | 1992-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3684247D1 (de) | Vorrichtung mit dehnungsinduzierter zone. | |
DE3765027D1 (de) | Vorrichtung mit katheter. | |
DE3683245D1 (de) | Vorrichtung mit zwei daempfern. | |
DE3668785D1 (de) | Hyperthermie-behandlungsgeraet. | |
DE3677168D1 (de) | Vorrichtung zum entsaften. | |
FI873667A (fi) | Tvaotaktsfoerbraenningsmotor samt cylinderlock i denna. | |
DE3672512D1 (de) | Elektro-optische vorrichtung. | |
DE3672945D1 (de) | Vorrichtung mit zwei daempfern. | |
DE3669644D1 (de) | Epiliergeraet. | |
DE3671350D1 (de) | Tiefenduengegeraet. | |
DE3667581D1 (de) | Elektrolumineszente vorrichtung. | |
DE3675325D1 (de) | Kaltverfestigungsvorrichtung. | |
FI860715A (fi) | Anordning foer cirkelsaog samt cirkelsaogblad. | |
NO863584L (no) | Betraktningsanordning. | |
DE3672759D1 (de) | Entschichtungsvorrichtung. | |
FI863447A (fi) | Interpolations- eller decimatorfilter samt foer detta avsett sugfilter. | |
FI863446A (fi) | Interpolations- eller decimatorfilter samt foer detta avsett digitalfilter. | |
FI860551A0 (fi) | Gas-luft-avskiljare. | |
IT8620247A0 (it) | Apparecchio estrusore-turbomescolatore. | |
DE3687926D1 (de) | Elektrochrome vorrichtung. | |
FI865127A0 (fi) | Fungicider innehaollande triazol- och oligoetergrupper samt kompositioner. | |
DE3587056D1 (de) | Vorrichtung mit modularer bauweise. | |
DE3668384D1 (de) | Vorlagenzufuehrvorrichtung mit unterdruck. | |
DE3684356D1 (de) | Heizvorrichtung. | |
NL192217B (nl) | Verwarmingsinrichting. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |