DE3684247D1 - Vorrichtung mit dehnungsinduzierter zone. - Google Patents

Vorrichtung mit dehnungsinduzierter zone.

Info

Publication number
DE3684247D1
DE3684247D1 DE8686116018T DE3684247T DE3684247D1 DE 3684247 D1 DE3684247 D1 DE 3684247D1 DE 8686116018 T DE8686116018 T DE 8686116018T DE 3684247 T DE3684247 T DE 3684247T DE 3684247 D1 DE3684247 D1 DE 3684247D1
Authority
DE
Germany
Prior art keywords
stretch
induced zone
induced
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686116018T
Other languages
English (en)
Inventor
John Condon Bean
David Vern Lang
Thomas Perine Pearsall
Roosevelt People
Henryk Temkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3684247D1 publication Critical patent/DE3684247D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE8686116018T 1985-11-18 1986-11-18 Vorrichtung mit dehnungsinduzierter zone. Expired - Lifetime DE3684247D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79915485A 1985-11-18 1985-11-18

Publications (1)

Publication Number Publication Date
DE3684247D1 true DE3684247D1 (de) 1992-04-16

Family

ID=25175170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686116018T Expired - Lifetime DE3684247D1 (de) 1985-11-18 1986-11-18 Vorrichtung mit dehnungsinduzierter zone.

Country Status (5)

Country Link
US (1) US4772924A (de)
EP (1) EP0224189B1 (de)
JP (1) JPS62128183A (de)
CA (1) CA1282671C (de)
DE (1) DE3684247D1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE114386T1 (de) * 1987-12-23 1994-12-15 British Telecomm Halbleiterheterostruktur.
CA1314614C (en) * 1988-06-06 1993-03-16 Clyde George Bethea Quantum-well radiation detector
US5256550A (en) * 1988-11-29 1993-10-26 Hewlett-Packard Company Fabricating a semiconductor device with strained Si1-x Gex layer
US5016064A (en) * 1989-09-25 1991-05-14 Motorola, Inc. Quantom well structure having enhanced conductivity
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
US5012302A (en) * 1990-03-30 1991-04-30 Motorola, Inc. Enhanced conductivity quantum well having resonant charge coupling
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US5126553A (en) * 1990-11-28 1992-06-30 Bell Communications Research, Inc. Bistable optically switchable resonant-tunneling device and its use in signal processing
US5132746A (en) * 1991-01-04 1992-07-21 International Business Machines Corporation Biaxial-stress barrier shifts in pseudomorphic tunnel devices
US5523592A (en) * 1993-02-03 1996-06-04 Hitachi, Ltd. Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same
US5329257A (en) * 1993-04-30 1994-07-12 International Business Machines Corproation SiGe transferred electron device and oscillator using same
EP0663699B1 (de) * 1993-12-20 1998-04-22 Nec Corporation Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente
JP2874570B2 (ja) * 1993-12-20 1999-03-24 日本電気株式会社 半導体装置およびその製造方法
JP2701754B2 (ja) * 1994-10-03 1998-01-21 日本電気株式会社 シリコン受光素子の製造方法
JP2748917B2 (ja) * 1996-03-22 1998-05-13 日本電気株式会社 半導体装置
DE19620761A1 (de) * 1996-05-23 1997-11-27 Daimler Benz Ag Optoelektrisches Bauelement mit einer modulationsdotierten Schichtstruktur
KR19990023221A (ko) 1997-08-20 1999-03-25 포만 제프리 엘 감광성 소자, 능동 픽셀 센서 소자, 능동 픽셀 센서 감광성 소자 및 능동 픽셀 센서 장치
US6087683A (en) * 1998-07-31 2000-07-11 Lucent Technologies Silicon germanium heterostructure bipolar transistor with indium doped base
GB0002958D0 (en) 2000-02-09 2000-03-29 Cambridge Display Tech Ltd Optoelectronic devices
AU2002368035A1 (en) 2002-06-19 2004-01-06 Massachusetts Institute Of Technology Ge photodetectors
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7755079B2 (en) * 2007-08-17 2010-07-13 Sandia Corporation Strained-layer superlattice focal plane array having a planar structure
US8810996B2 (en) 2010-11-22 2014-08-19 The Trustees Of The Stevens Institute Of Technology Inkjet-printed flexible electronic components from graphene oxide
US8878120B2 (en) 2010-12-13 2014-11-04 The Trustees Of The Stevens Institute Of Technology Active bandgap tuning of graphene for tunable photodetection applications
US9738526B2 (en) 2012-09-06 2017-08-22 The Trustees Of The Stevens Institute Of Technology Popcorn-like growth of graphene-carbon nanotube multi-stack hybrid three-dimensional architecture for energy storage devices
US9178129B2 (en) 2012-10-15 2015-11-03 The Trustees Of The Stevens Institute Of Technology Graphene-based films in sensor applications
US20140205841A1 (en) 2013-01-18 2014-07-24 Hongwei Qiu Granules of graphene oxide by spray drying
US9573814B2 (en) 2013-02-20 2017-02-21 The Trustees Of The Stevens Institute Of Technology High-throughput graphene printing and selective transfer using a localized laser heating technique
DE102015108402B4 (de) * 2015-05-28 2021-03-18 Infineon Technologies Ag Halbleiterbauelemente, ein Fluidsensor und ein Verfahren zum Bilden eines Halbleiterbauelements
US11330984B2 (en) 2015-06-19 2022-05-17 The Trustees Of The Stevens Institute Of Technology Wearable graphene sensors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US278474A (en) * 1883-05-29 Adjustable coupling for harness
US529455A (en) * 1893-10-14 1894-11-20 Detachably securing gun-barrels to stocks
US3626257A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor device with superlattice region
JPS5421294A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Avalanche photo diode
US4278474A (en) * 1980-03-25 1981-07-14 The United States Of America As Represented By The United States Department Of Energy Device for conversion of electromagnetic radiation into electrical current
US4616241A (en) * 1983-03-22 1986-10-07 The United States Of America As Represented By The United States Department Of Energy Superlattice optical device
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
US4529455A (en) * 1983-10-28 1985-07-16 At&T Bell Laboratories Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
JPS61226973A (ja) * 1985-04-01 1986-10-08 Hitachi Ltd アバランシエホトダイオ−ド
JPS6262564A (ja) * 1985-09-12 1987-03-19 Fujitsu Ltd 半導体受光素子

Also Published As

Publication number Publication date
EP0224189A3 (en) 1989-05-31
US4772924A (en) 1988-09-20
JPS62128183A (ja) 1987-06-10
CA1282671C (en) 1991-04-09
EP0224189A2 (de) 1987-06-03
EP0224189B1 (de) 1992-03-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN