FR2488048A1 - Detecteur photovoltaique sensible dans l'infrarouge proche - Google Patents

Detecteur photovoltaique sensible dans l'infrarouge proche Download PDF

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Publication number
FR2488048A1
FR2488048A1 FR8016788A FR8016788A FR2488048A1 FR 2488048 A1 FR2488048 A1 FR 2488048A1 FR 8016788 A FR8016788 A FR 8016788A FR 8016788 A FR8016788 A FR 8016788A FR 2488048 A1 FR2488048 A1 FR 2488048A1
Authority
FR
France
Prior art keywords
substrate
detector
type
zone
photovoltaic detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8016788A
Other languages
English (en)
French (fr)
Other versions
FR2488048B1 (show.php
Inventor
Guy Pichard
Michel Royer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR8016788A priority Critical patent/FR2488048A1/fr
Priority to EP81401195A priority patent/EP0045258B1/fr
Priority to DE8181401195T priority patent/DE3172767D1/de
Priority to JP56117911A priority patent/JPS5753633A/ja
Publication of FR2488048A1 publication Critical patent/FR2488048A1/fr
Application granted granted Critical
Publication of FR2488048B1 publication Critical patent/FR2488048B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P32/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H10P14/69—
    • H10P32/17—

Landscapes

  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
FR8016788A 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche Granted FR2488048A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8016788A FR2488048A1 (fr) 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche
EP81401195A EP0045258B1 (fr) 1980-07-30 1981-07-24 Détecteur photovoltaique sensible dans l'infrarouge proche
DE8181401195T DE3172767D1 (en) 1980-07-30 1981-07-24 Photovoltaic detector sensitive in the near infrared range
JP56117911A JPS5753633A (en) 1980-07-30 1981-07-29 Photoelectromotive detector sensitive to near infrared region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016788A FR2488048A1 (fr) 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche

Publications (2)

Publication Number Publication Date
FR2488048A1 true FR2488048A1 (fr) 1982-02-05
FR2488048B1 FR2488048B1 (show.php) 1983-12-23

Family

ID=9244702

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016788A Granted FR2488048A1 (fr) 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche

Country Status (4)

Country Link
EP (1) EP0045258B1 (show.php)
JP (1) JPS5753633A (show.php)
DE (1) DE3172767D1 (show.php)
FR (1) FR2488048A1 (show.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
FR2598558B1 (fr) * 1986-05-07 1988-11-10 Telecommunications Sa Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm
JP2798927B2 (ja) * 1988-03-28 1998-09-17 株式会社東芝 半導体受光装置及びその製造方法
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
GB9921639D0 (en) * 1999-09-15 1999-11-17 Secr Defence Brit New organotellurium compound and new method for synthesising organotellurium compounds

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
EP0045258A3 (en) 1982-02-17
JPH0345331B2 (show.php) 1991-07-10
FR2488048B1 (show.php) 1983-12-23
JPS5753633A (en) 1982-03-30
DE3172767D1 (en) 1985-12-05
EP0045258A2 (fr) 1982-02-03
EP0045258B1 (fr) 1985-10-30

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