JPS5753633A - Photoelectromotive detector sensitive to near infrared region - Google Patents
Photoelectromotive detector sensitive to near infrared regionInfo
- Publication number
- JPS5753633A JPS5753633A JP56117911A JP11791181A JPS5753633A JP S5753633 A JPS5753633 A JP S5753633A JP 56117911 A JP56117911 A JP 56117911A JP 11791181 A JP11791181 A JP 11791181A JP S5753633 A JPS5753633 A JP S5753633A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectromotive
- near infrared
- infrared region
- detector sensitive
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8016788A FR2488048A1 (fr) | 1980-07-30 | 1980-07-30 | Detecteur photovoltaique sensible dans l'infrarouge proche |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5753633A true JPS5753633A (en) | 1982-03-30 |
JPH0345331B2 JPH0345331B2 (ja) | 1991-07-10 |
Family
ID=9244702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56117911A Granted JPS5753633A (en) | 1980-07-30 | 1981-07-29 | Photoelectromotive detector sensitive to near infrared region |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0045258B1 (ja) |
JP (1) | JPS5753633A (ja) |
DE (1) | DE3172767D1 (ja) |
FR (1) | FR2488048A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01245567A (ja) * | 1988-03-28 | 1989-09-29 | Toshiba Corp | 半導体受光装置及びその製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2501915A1 (fr) * | 1981-03-10 | 1982-09-17 | Telecommunications Sa | Photodetecteur sensible dans l'infra-rouge proche |
FR2598558B1 (fr) * | 1986-05-07 | 1988-11-10 | Telecommunications Sa | Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm |
EP0635892B1 (en) * | 1992-07-21 | 2002-06-26 | Raytheon Company | Bake-stable HgCdTe photodetector and method for fabricating same |
GB9921639D0 (en) * | 1999-09-15 | 1999-11-17 | Secr Defence Brit | New organotellurium compound and new method for synthesising organotellurium compounds |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
-
1980
- 1980-07-30 FR FR8016788A patent/FR2488048A1/fr active Granted
-
1981
- 1981-07-24 DE DE8181401195T patent/DE3172767D1/de not_active Expired
- 1981-07-24 EP EP81401195A patent/EP0045258B1/fr not_active Expired
- 1981-07-29 JP JP56117911A patent/JPS5753633A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01245567A (ja) * | 1988-03-28 | 1989-09-29 | Toshiba Corp | 半導体受光装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0345331B2 (ja) | 1991-07-10 |
EP0045258A3 (en) | 1982-02-17 |
DE3172767D1 (en) | 1985-12-05 |
EP0045258A2 (fr) | 1982-02-03 |
EP0045258B1 (fr) | 1985-10-30 |
FR2488048A1 (fr) | 1982-02-05 |
FR2488048B1 (ja) | 1983-12-23 |
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