JPS5753633A - Photoelectromotive detector sensitive to near infrared region - Google Patents

Photoelectromotive detector sensitive to near infrared region

Info

Publication number
JPS5753633A
JPS5753633A JP56117911A JP11791181A JPS5753633A JP S5753633 A JPS5753633 A JP S5753633A JP 56117911 A JP56117911 A JP 56117911A JP 11791181 A JP11791181 A JP 11791181A JP S5753633 A JPS5753633 A JP S5753633A
Authority
JP
Japan
Prior art keywords
photoelectromotive
near infrared
infrared region
detector sensitive
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56117911A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0345331B2 (show.php
Inventor
Pishiyaaru Gii
Roie Mitsushieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Publication of JPS5753633A publication Critical patent/JPS5753633A/ja
Publication of JPH0345331B2 publication Critical patent/JPH0345331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H10P14/69—
    • H10P32/17—

Landscapes

  • Light Receiving Elements (AREA)
  • Radiation Pyrometers (AREA)
JP56117911A 1980-07-30 1981-07-29 Photoelectromotive detector sensitive to near infrared region Granted JPS5753633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8016788A FR2488048A1 (fr) 1980-07-30 1980-07-30 Detecteur photovoltaique sensible dans l'infrarouge proche

Publications (2)

Publication Number Publication Date
JPS5753633A true JPS5753633A (en) 1982-03-30
JPH0345331B2 JPH0345331B2 (show.php) 1991-07-10

Family

ID=9244702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56117911A Granted JPS5753633A (en) 1980-07-30 1981-07-29 Photoelectromotive detector sensitive to near infrared region

Country Status (4)

Country Link
EP (1) EP0045258B1 (show.php)
JP (1) JPS5753633A (show.php)
DE (1) DE3172767D1 (show.php)
FR (1) FR2488048A1 (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01245567A (ja) * 1988-03-28 1989-09-29 Toshiba Corp 半導体受光装置及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
FR2598558B1 (fr) * 1986-05-07 1988-11-10 Telecommunications Sa Photodiode a avalanche hgcdte sensible aux rayonnements de longueur d'onde superieure a 2 mm
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
GB9921639D0 (en) * 1999-09-15 1999-11-17 Secr Defence Brit New organotellurium compound and new method for synthesising organotellurium compounds

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01245567A (ja) * 1988-03-28 1989-09-29 Toshiba Corp 半導体受光装置及びその製造方法

Also Published As

Publication number Publication date
EP0045258A3 (en) 1982-02-17
JPH0345331B2 (show.php) 1991-07-10
FR2488048B1 (show.php) 1983-12-23
DE3172767D1 (en) 1985-12-05
EP0045258A2 (fr) 1982-02-03
EP0045258B1 (fr) 1985-10-30
FR2488048A1 (fr) 1982-02-05

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