FR2480036A1 - Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire - Google Patents

Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire Download PDF

Info

Publication number
FR2480036A1
FR2480036A1 FR8007649A FR8007649A FR2480036A1 FR 2480036 A1 FR2480036 A1 FR 2480036A1 FR 8007649 A FR8007649 A FR 8007649A FR 8007649 A FR8007649 A FR 8007649A FR 2480036 A1 FR2480036 A1 FR 2480036A1
Authority
FR
France
Prior art keywords
type
guard ring
epitaxial layer
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8007649A
Other languages
English (en)
French (fr)
Other versions
FR2480036B1 (enExample
Inventor
Eugene Tonnel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8007649A priority Critical patent/FR2480036A1/fr
Priority to EP81400444A priority patent/EP0037764B1/fr
Priority to DE8181400444T priority patent/DE3165629D1/de
Publication of FR2480036A1 publication Critical patent/FR2480036A1/fr
Application granted granted Critical
Publication of FR2480036B1 publication Critical patent/FR2480036B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8007649A 1980-04-04 1980-04-04 Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire Granted FR2480036A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8007649A FR2480036A1 (fr) 1980-04-04 1980-04-04 Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
EP81400444A EP0037764B1 (fr) 1980-04-04 1981-03-20 Structure de dispositif à semiconducteur à anneau de garde, et à fonctionnement unipolaire
DE8181400444T DE3165629D1 (en) 1980-04-04 1981-03-20 Unipolar functioning semiconductor device structure with guard ring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8007649A FR2480036A1 (fr) 1980-04-04 1980-04-04 Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire

Publications (2)

Publication Number Publication Date
FR2480036A1 true FR2480036A1 (fr) 1981-10-09
FR2480036B1 FR2480036B1 (enExample) 1984-03-23

Family

ID=9240548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007649A Granted FR2480036A1 (fr) 1980-04-04 1980-04-04 Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire

Country Status (3)

Country Link
EP (1) EP0037764B1 (enExample)
DE (1) DE3165629D1 (enExample)
FR (1) FR2480036A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
IT1244239B (it) * 1990-05-31 1994-07-08 Sgs Thomson Microelectronics Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4110775A (en) * 1976-08-23 1978-08-29 Festa Thomas A Schottky diode with voltage limiting guard band
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures

Also Published As

Publication number Publication date
EP0037764B1 (fr) 1984-08-22
FR2480036B1 (enExample) 1984-03-23
DE3165629D1 (en) 1984-09-27
EP0037764A1 (fr) 1981-10-14

Similar Documents

Publication Publication Date Title
CN108198849B (zh) 一种齐纳二极管及其制造方法
CN101312157A (zh) 用来制造保护结构的方法
WO2002037546A1 (fr) Procede de realisation d'une diode schottky dans du carbure de silicium
FR2803103A1 (fr) Diode schottky sur substrat de carbure de silicium
FR2481518A1 (fr) Procede de realisation d'un dispositif semiconducteur comportant des transistors a effet de champ complementaires
EP1681725A1 (fr) Composant unipolaire vertical à faible courant de fuite
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
FR2803094A1 (fr) Fabrication de composants unipolaires
FR2953062A1 (fr) Diode de protection bidirectionnelle basse tension
EP0521802B1 (fr) Diode à avalanche dans un circuit intégré bipolaire
EP0069606A1 (fr) Transistor à effet de champ vertical à jonction et procédé de fabrication
FR2482368A1 (fr) Operateur logique a injection par le substrat et son procede de fabrication
FR2969825A1 (fr) Composant vertical bidirectionnel a double sillonnage
EP1146561A1 (fr) Procédé de réalisation d'un transistor bipolaire
FR2480036A1 (fr) Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
EP0018862B1 (fr) Diode à avalanche de type planar à tension de claquage comprise entre 4 et 8 volts et procédé de fabrication
EP1517377A1 (fr) Transistor bipolaire
FR2764112A1 (fr) Mur d'isolement entre composants de puissance
EP0948038B1 (fr) Procédé de fabrication d'une diode à avalanche à seuil réglable
EP0462029B1 (fr) Procédé de fabrication d'un transistor bipolaire supportant des polarisations inverses
FR2762139A1 (fr) Transistor pnp lateral dans une technologie bicmos
US20120061803A1 (en) Asymmetrical bidirectional protection component
EP0038239B1 (fr) Diode blocable, et procédé de fabrication
EP0032069B1 (fr) Procédé d'ajustement du coefficient de température d'une diode de référence et diode de référence obtenue
FR2814856A1 (fr) Procede de realisation d'un contact sur un varbure de silicium

Legal Events

Date Code Title Description
ST Notification of lapse