DE3165629D1 - Unipolar functioning semiconductor device structure with guard ring - Google Patents

Unipolar functioning semiconductor device structure with guard ring

Info

Publication number
DE3165629D1
DE3165629D1 DE8181400444T DE3165629T DE3165629D1 DE 3165629 D1 DE3165629 D1 DE 3165629D1 DE 8181400444 T DE8181400444 T DE 8181400444T DE 3165629 T DE3165629 T DE 3165629T DE 3165629 D1 DE3165629 D1 DE 3165629D1
Authority
DE
Germany
Prior art keywords
unipolar
semiconductor device
device structure
guard ring
functioning semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181400444T
Other languages
German (de)
English (en)
Inventor
Eugene Tonnel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3165629D1 publication Critical patent/DE3165629D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8181400444T 1980-04-04 1981-03-20 Unipolar functioning semiconductor device structure with guard ring Expired DE3165629D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8007649A FR2480036A1 (fr) 1980-04-04 1980-04-04 Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire

Publications (1)

Publication Number Publication Date
DE3165629D1 true DE3165629D1 (en) 1984-09-27

Family

ID=9240548

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181400444T Expired DE3165629D1 (en) 1980-04-04 1981-03-20 Unipolar functioning semiconductor device structure with guard ring

Country Status (3)

Country Link
EP (1) EP0037764B1 (enExample)
DE (1) DE3165629D1 (enExample)
FR (1) FR2480036A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
IT1244239B (it) * 1990-05-31 1994-07-08 Sgs Thomson Microelectronics Terminazione dello stadio di potenza di un dispositivo monolitico a semicondutture e relativo processo di fabbricazione

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4110775A (en) * 1976-08-23 1978-08-29 Festa Thomas A Schottky diode with voltage limiting guard band
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures

Also Published As

Publication number Publication date
EP0037764B1 (fr) 1984-08-22
FR2480036B1 (enExample) 1984-03-23
EP0037764A1 (fr) 1981-10-14
FR2480036A1 (fr) 1981-10-09

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