FR2473072B1 - - Google Patents

Info

Publication number
FR2473072B1
FR2473072B1 FR8100172A FR8100172A FR2473072B1 FR 2473072 B1 FR2473072 B1 FR 2473072B1 FR 8100172 A FR8100172 A FR 8100172A FR 8100172 A FR8100172 A FR 8100172A FR 2473072 B1 FR2473072 B1 FR 2473072B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8100172A
Other languages
French (fr)
Other versions
FR2473072A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/109,865 external-priority patent/US4661200A/en
Application filed by Individual filed Critical Individual
Publication of FR2473072A1 publication Critical patent/FR2473072A1/fr
Application granted granted Critical
Publication of FR2473072B1 publication Critical patent/FR2473072B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8100172A 1980-01-07 1981-01-07 Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils Granted FR2473072A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/109,865 US4661200A (en) 1980-01-07 1980-01-07 String stabilized ribbon growth
US21474180A 1980-12-11 1980-12-11

Publications (2)

Publication Number Publication Date
FR2473072A1 FR2473072A1 (fr) 1981-07-10
FR2473072B1 true FR2473072B1 (enExample) 1984-09-14

Family

ID=26807452

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8100172A Granted FR2473072A1 (fr) 1980-01-07 1981-01-07 Procede et appareil de formation de rubans par cristallisation et de reduction de la quantite d'impuretes de tels rubans, et rubans cristallins a bords contenant des fils

Country Status (6)

Country Link
CA (1) CA1169336A (enExample)
DE (1) DE3100245A1 (enExample)
FR (1) FR2473072A1 (enExample)
GB (3) GB2067920B (enExample)
IL (1) IL61852A (enExample)
IT (1) IT1143254B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3240245A1 (de) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
FR2568490B1 (fr) * 1984-08-02 1986-12-05 Comp Generale Electricite Procede et dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
US6402839B1 (en) 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6482261B2 (en) * 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
AU2003284253A1 (en) 2002-10-18 2004-05-04 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
US20080134964A1 (en) * 2006-12-06 2008-06-12 Evergreen Solar, Inc. System and Method of Forming a Crystal
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
US8304057B2 (en) 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
EP2183411B1 (en) 2007-08-31 2013-08-21 Max Era, Inc. Ribbon crystal string for increasing wafer yield
EP2324146B1 (en) 2008-08-18 2013-05-29 Max Era, Inc. Method and apparatus for growing a ribbon crystal while controlling transport of gas borne contaminants across a ribbon surface
JP2013538781A (ja) * 2010-10-01 2013-10-17 エバーグリーン ソーラー， インコーポレイテッド ウエハ重量の関数としたシートウエハ処理
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB796878A (en) * 1955-06-27 1958-06-18 Telefunken Gmbh Improvements in or relating to methods of stirring molten electrically conductive material
NL113205C (enExample) * 1958-08-28 1900-01-01
US3129061A (en) * 1961-03-27 1964-04-14 Westinghouse Electric Corp Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US3298795A (en) * 1964-03-23 1967-01-17 Westinghouse Electric Corp Process for controlling dendritic crystal growth
NL124684C (enExample) * 1964-07-29 1900-01-01
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
GB1271493A (en) * 1968-05-09 1972-04-19 Stanelco Thermatron Ltd Improved treatment process
US3639718A (en) * 1970-06-15 1972-02-01 Little Inc A Pressure- and temperature-controlled crystal growing apparatus
US3865554A (en) * 1971-09-23 1975-02-11 Little Inc A Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
IT1055104B (it) * 1975-02-07 1981-12-21 Philips Nv Metodo di fabbricazione di dispositivi semiconduttori comportante la formazione di uno strato di materiale semiconduuttore su di un substrato apparato per l'attuazione di tale metodo e dispositivo semiconduttore fabbricato con l'ausilio di detto metodo
DE2520764A1 (de) * 1975-05-09 1976-11-18 Siemens Ag Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial

Also Published As

Publication number Publication date
GB2135595B (en) 1985-05-22
GB2067920B (en) 1984-10-24
FR2473072A1 (fr) 1981-07-10
GB2067920A (en) 1981-08-05
GB8400735D0 (en) 1984-02-15
IT8167008A0 (it) 1981-01-07
GB2135595A (en) 1984-09-05
GB8400734D0 (en) 1984-02-15
DE3100245C2 (enExample) 1990-07-05
GB2135594B (en) 1985-05-15
GB2135594A (en) 1984-09-05
CA1169336A (en) 1984-06-19
IL61852A (en) 1984-05-31
IT1143254B (it) 1986-10-22
DE3100245A1 (de) 1982-01-14

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Legal Events

Date Code Title Description
ST Notification of lapse