FR2464562A1 - Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope - Google Patents

Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope Download PDF

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Publication number
FR2464562A1
FR2464562A1 FR7921561A FR7921561A FR2464562A1 FR 2464562 A1 FR2464562 A1 FR 2464562A1 FR 7921561 A FR7921561 A FR 7921561A FR 7921561 A FR7921561 A FR 7921561A FR 2464562 A1 FR2464562 A1 FR 2464562A1
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FR
France
Prior art keywords
electrodes
substrate
grooves
reaching
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7921561A
Other languages
English (en)
French (fr)
Other versions
FR2464562B1 (show.php
Inventor
Pierre Gibeau
Raymond Henry
Michel Laviron
Henri Derewonko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7921561A priority Critical patent/FR2464562A1/fr
Publication of FR2464562A1 publication Critical patent/FR2464562A1/fr
Application granted granted Critical
Publication of FR2464562B1 publication Critical patent/FR2464562B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7921561A 1979-08-28 1979-08-28 Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope Granted FR2464562A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7921561A FR2464562A1 (fr) 1979-08-28 1979-08-28 Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7921561A FR2464562A1 (fr) 1979-08-28 1979-08-28 Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope

Publications (2)

Publication Number Publication Date
FR2464562A1 true FR2464562A1 (fr) 1981-03-06
FR2464562B1 FR2464562B1 (show.php) 1982-12-03

Family

ID=9229131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7921561A Granted FR2464562A1 (fr) 1979-08-28 1979-08-28 Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope

Country Status (1)

Country Link
FR (1) FR2464562A1 (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307844A3 (en) * 1987-09-14 1989-07-19 Fujitsu Limited Semiconductor integrated circuit having interconnection with improved design flexibility
EP0432044A1 (fr) * 1989-12-08 1991-06-12 Thomson-Csf Perfectionnement aux transistors de puissance en matériaux III-V sur substrat silicium, et procédé de fabrication

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307844A3 (en) * 1987-09-14 1989-07-19 Fujitsu Limited Semiconductor integrated circuit having interconnection with improved design flexibility
US5072274A (en) * 1987-09-14 1991-12-10 Fujitsu Limited Semiconductor integrated circuit having interconnection with improved design flexibility
EP0432044A1 (fr) * 1989-12-08 1991-06-12 Thomson-Csf Perfectionnement aux transistors de puissance en matériaux III-V sur substrat silicium, et procédé de fabrication
FR2655774A1 (fr) * 1989-12-08 1991-06-14 Thomson Csf Perfectionnement aux transistors de puissance en materiaux iii-v sur substrat silicium et procede de fabrication.
US5138407A (en) * 1989-12-08 1992-08-11 Thomson - Csf Transistor made of 3-5 group semiconductor materials on a silicon substrate

Also Published As

Publication number Publication date
FR2464562B1 (show.php) 1982-12-03

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