FR2464562B1 - - Google Patents
Info
- Publication number
- FR2464562B1 FR2464562B1 FR7921561A FR7921561A FR2464562B1 FR 2464562 B1 FR2464562 B1 FR 2464562B1 FR 7921561 A FR7921561 A FR 7921561A FR 7921561 A FR7921561 A FR 7921561A FR 2464562 B1 FR2464562 B1 FR 2464562B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7921561A FR2464562A1 (fr) | 1979-08-28 | 1979-08-28 | Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7921561A FR2464562A1 (fr) | 1979-08-28 | 1979-08-28 | Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2464562A1 FR2464562A1 (fr) | 1981-03-06 |
| FR2464562B1 true FR2464562B1 (show.php) | 1982-12-03 |
Family
ID=9229131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7921561A Granted FR2464562A1 (fr) | 1979-08-28 | 1979-08-28 | Transistor a effet de champ comprenant des chemins conducteurs realises sous forme de rainures recouvertes de metal et atteignant un substrat tres dope |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2464562A1 (show.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473669A (en) * | 1987-09-14 | 1989-03-17 | Fujitsu Ltd | Semiconductor integrated circuit |
| FR2655774A1 (fr) * | 1989-12-08 | 1991-06-14 | Thomson Csf | Perfectionnement aux transistors de puissance en materiaux iii-v sur substrat silicium et procede de fabrication. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969745A (en) * | 1974-09-18 | 1976-07-13 | Texas Instruments Incorporated | Interconnection in multi element planar structures |
-
1979
- 1979-08-28 FR FR7921561A patent/FR2464562A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2464562A1 (fr) | 1981-03-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |