FR2462028A1 - Structure de thyristor pour circuit integre et son procede de fabrication - Google Patents

Structure de thyristor pour circuit integre et son procede de fabrication Download PDF

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Publication number
FR2462028A1
FR2462028A1 FR7918464A FR7918464A FR2462028A1 FR 2462028 A1 FR2462028 A1 FR 2462028A1 FR 7918464 A FR7918464 A FR 7918464A FR 7918464 A FR7918464 A FR 7918464A FR 2462028 A1 FR2462028 A1 FR 2462028A1
Authority
FR
France
Prior art keywords
region
type
conductivity
thyristor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7918464A
Other languages
English (en)
French (fr)
Other versions
FR2462028B1 (enExample
Inventor
Christian Combes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7918464A priority Critical patent/FR2462028A1/fr
Priority to DE19803026927 priority patent/DE3026927A1/de
Publication of FR2462028A1 publication Critical patent/FR2462028A1/fr
Application granted granted Critical
Publication of FR2462028B1 publication Critical patent/FR2462028B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Thyristors (AREA)
FR7918464A 1979-07-17 1979-07-17 Structure de thyristor pour circuit integre et son procede de fabrication Granted FR2462028A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7918464A FR2462028A1 (fr) 1979-07-17 1979-07-17 Structure de thyristor pour circuit integre et son procede de fabrication
DE19803026927 DE3026927A1 (de) 1979-07-17 1980-07-16 Thyristor fuer integrierten schaltkreis und verfahren zur herstellung desselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7918464A FR2462028A1 (fr) 1979-07-17 1979-07-17 Structure de thyristor pour circuit integre et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2462028A1 true FR2462028A1 (fr) 1981-02-06
FR2462028B1 FR2462028B1 (enExample) 1983-04-29

Family

ID=9227967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7918464A Granted FR2462028A1 (fr) 1979-07-17 1979-07-17 Structure de thyristor pour circuit integre et son procede de fabrication

Country Status (2)

Country Link
DE (1) DE3026927A1 (enExample)
FR (1) FR2462028A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351014B4 (de) * 2003-10-31 2008-06-05 Infineon Technologies Ag Diodenstruktur und integrale Leistungsschaltanordnung mit Low-Leakage-Diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2246065A1 (enExample) * 1973-09-10 1975-04-25 Nat Semiconductor Corp
FR2290039A1 (fr) * 1974-10-31 1976-05-28 Sony Corp Composant semi-conducteur
US3993512A (en) * 1971-11-22 1976-11-23 U.S. Philips Corporation Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy
FR2358024A1 (fr) * 1976-07-06 1978-02-03 Western Electric Co Structure de thyristor integre

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1265875B (de) * 1963-01-05 1968-04-11 Licentia Gmbh Steuerbarer Halbleitergleichrichter
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
CA1009377A (en) * 1973-06-08 1977-04-26 Borg-Warner Corporation Solid state control switch
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993512A (en) * 1971-11-22 1976-11-23 U.S. Philips Corporation Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy
FR2246065A1 (enExample) * 1973-09-10 1975-04-25 Nat Semiconductor Corp
FR2290039A1 (fr) * 1974-10-31 1976-05-28 Sony Corp Composant semi-conducteur
FR2358024A1 (fr) * 1976-07-06 1978-02-03 Western Electric Co Structure de thyristor integre

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
FR2462028B1 (enExample) 1983-04-29
DE3026927A1 (de) 1981-02-12
DE3026927C2 (enExample) 1992-07-09

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