FR2456988A1 - Support d'enregistrement d'informations - Google Patents

Support d'enregistrement d'informations

Info

Publication number
FR2456988A1
FR2456988A1 FR8010934A FR8010934A FR2456988A1 FR 2456988 A1 FR2456988 A1 FR 2456988A1 FR 8010934 A FR8010934 A FR 8010934A FR 8010934 A FR8010934 A FR 8010934A FR 2456988 A1 FR2456988 A1 FR 2456988A1
Authority
FR
France
Prior art keywords
recording medium
film
silicon
information recording
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8010934A
Other languages
English (en)
French (fr)
Other versions
FR2456988B1 (enExample
Inventor
Soichi Iwamura
Yasuaki Nishida
Toshimi Yamato
Norikazu Sawazaki
Yoshio Nisi
Masaharu Watanabe
Norio Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Broadcasting Corp
Original Assignee
Nippon Hoso Kyokai NHK
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Hoso Kyokai NHK, Japan Broadcasting Corp filed Critical Nippon Hoso Kyokai NHK
Publication of FR2456988A1 publication Critical patent/FR2456988A1/fr
Application granted granted Critical
Publication of FR2456988B1 publication Critical patent/FR2456988B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
FR8010934A 1979-05-14 1980-05-14 Support d'enregistrement d'informations Granted FR2456988A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54058090A JPS5938655B2 (ja) 1979-05-14 1979-05-14 半導体デイスクメモリ装置

Publications (2)

Publication Number Publication Date
FR2456988A1 true FR2456988A1 (fr) 1980-12-12
FR2456988B1 FR2456988B1 (enExample) 1983-03-11

Family

ID=13074236

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8010934A Granted FR2456988A1 (fr) 1979-05-14 1980-05-14 Support d'enregistrement d'informations

Country Status (5)

Country Link
US (1) US4340953A (enExample)
JP (1) JPS5938655B2 (enExample)
DE (1) DE3018529C2 (enExample)
FR (1) FR2456988A1 (enExample)
GB (1) GB2051456B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171737A (ja) * 1982-04-02 1983-10-08 Citizen Watch Co Ltd 半導体不揮発性記憶装置
JPS5998336A (ja) * 1982-11-29 1984-06-06 Toshiba Corp 情報信号の記録再生ヘツド
US4575822A (en) * 1983-02-15 1986-03-11 The Board Of Trustees Of The Leland Stanford Junior University Method and means for data storage using tunnel current data readout
USRE34535E (en) * 1983-02-23 1994-02-08 Texas Instruments Incorporated Floating gate memory with improved dielectric
US4613956A (en) * 1983-02-23 1986-09-23 Texas Instruments Incorporated Floating gate memory with improved dielectric
US4556597A (en) * 1983-08-22 1985-12-03 International Business Machines Corporation Ion doped servo pattern for magnetic recording disk
JPS60117435A (ja) * 1983-11-30 1985-06-24 Toshiba Corp 情報記録媒体
US4878213A (en) * 1984-09-14 1989-10-31 Xerox Corporation System for recording and readout of information at atomic scale densities and method therefor
US4829507A (en) * 1984-09-14 1989-05-09 Xerox Corporation Method of and system for atomic scale readout of recorded information
US4907195A (en) * 1984-09-14 1990-03-06 Xerox Corporation Method of and system for atomic scale recording of information
WO1987004839A1 (fr) * 1986-02-07 1987-08-13 Institut Problem Modelirovania V Energetike Akadem Procede d'enregistrement, lecture et effacement photothermiques d'informations
US4862414A (en) * 1986-06-11 1989-08-29 Kuehnle Manfred R Optoelectronic recording tape or strip comprising photoconductive layer on thin, monocrystalline, flexible sapphire base
DE3752180T2 (de) * 1986-12-24 1998-07-30 Canon Kk Aufzeichnungs- und Wiedergabegerät
US4826732A (en) * 1987-03-16 1989-05-02 Xerox Corporation Recording medium
EP0553938B1 (en) * 1987-07-31 1998-09-02 Canon Kabushiki Kaisha Recording and reproducing device
JP2756254B2 (ja) * 1988-03-25 1998-05-25 キヤノン株式会社 記録装置及び再生装置
US4956817A (en) * 1988-05-26 1990-09-11 Quanscan, Inc. High density data storage and retrieval system
JP2628790B2 (ja) * 1989-06-23 1997-07-09 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ ディジタル情報を記憶された電荷の形態で記憶する方法および装置
US5103362A (en) * 1990-03-13 1992-04-07 International Business Machines Corporation Method of electrostatically sensing track position information for magnetic recording medium
JPH03144257A (ja) * 1990-09-28 1991-06-19 Matsushita Refrig Co Ltd 冷凍装置
US5166919A (en) * 1991-07-11 1992-11-24 International Business Machines Corporation Atomic scale electronic switch
US5724336A (en) * 1995-04-25 1998-03-03 Morton; Steven G. Tera-byte disk drive
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
JP4374728B2 (ja) * 2000-03-21 2009-12-02 ソニー株式会社 情報再生装置
JP2001281796A (ja) * 2000-03-31 2001-10-10 Toshiba Corp 有機光記録媒体および光記録再生装置
WO2002073673A1 (en) 2001-03-13 2002-09-19 Rochester Institute Of Technology A micro-electro-mechanical switch and a method of using and making thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US20050232061A1 (en) * 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
JP2009501435A (ja) * 2005-06-24 2009-01-15 ナノチップ インコーポレイテッド 高度に分解されたドメインを書き込むための媒体
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) * 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
JP4405451B2 (ja) 2005-09-05 2010-01-27 株式会社東芝 情報記録装置
EP2194549A1 (en) 2008-12-08 2010-06-09 Sony Corporation A method of producing an electret material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1581580A (enExample) * 1967-06-23 1969-09-19
FR2181038A1 (enExample) * 1972-04-19 1973-11-30 Rca Corp

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2775650A (en) * 1954-12-31 1956-12-25 Bell Telephone Labor Inc Ferroelectric recording and reproduction of speech
US3072543A (en) * 1958-10-08 1963-01-08 Lubow Raymond Dielectric signal storage device
US3185968A (en) * 1962-04-09 1965-05-25 Vm Corp Electrical signal delay apparatus
US3842194A (en) * 1971-03-22 1974-10-15 Rca Corp Information records and recording/playback systems therefor
US3826877A (en) * 1972-09-06 1974-07-30 Rca Corp Information playback system stylus
DE2420370A1 (de) * 1974-04-26 1975-11-06 Siemens Ag Speicherschaltung mit mnos-elementen
JPS5346621B2 (enExample) * 1974-10-21 1978-12-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1581580A (enExample) * 1967-06-23 1969-09-19
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
FR2181038A1 (enExample) * 1972-04-19 1973-11-30 Rca Corp

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *
EXRV/78 *

Also Published As

Publication number Publication date
GB2051456B (en) 1983-01-26
JPS55150268A (en) 1980-11-22
DE3018529C2 (de) 1985-01-17
JPS5938655B2 (ja) 1984-09-18
FR2456988B1 (enExample) 1983-03-11
US4340953A (en) 1982-07-20
DE3018529A1 (de) 1980-11-27
GB2051456A (en) 1981-01-14

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