FR2454183A1 - Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure - Google Patents

Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure

Info

Publication number
FR2454183A1
FR2454183A1 FR7909043A FR7909043A FR2454183A1 FR 2454183 A1 FR2454183 A1 FR 2454183A1 FR 7909043 A FR7909043 A FR 7909043A FR 7909043 A FR7909043 A FR 7909043A FR 2454183 A1 FR2454183 A1 FR 2454183A1
Authority
FR
France
Prior art keywords
oxide
coated
semiconductor
gallium arsenide
crystalline substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7909043A
Other languages
English (en)
French (fr)
Other versions
FR2454183B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7909043A priority Critical patent/FR2454183A1/fr
Publication of FR2454183A1 publication Critical patent/FR2454183A1/fr
Application granted granted Critical
Publication of FR2454183B1 publication Critical patent/FR2454183B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR7909043A 1979-04-10 1979-04-10 Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure Granted FR2454183A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7909043A FR2454183A1 (fr) 1979-04-10 1979-04-10 Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7909043A FR2454183A1 (fr) 1979-04-10 1979-04-10 Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure

Publications (2)

Publication Number Publication Date
FR2454183A1 true FR2454183A1 (fr) 1980-11-07
FR2454183B1 FR2454183B1 (enExample) 1982-05-21

Family

ID=9224169

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7909043A Granted FR2454183A1 (fr) 1979-04-10 1979-04-10 Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure

Country Status (1)

Country Link
FR (1) FR2454183A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178133A3 (en) * 1984-10-08 1986-12-30 Fujitsu Limited Semiconductor integrated circuit device
US5070035A (en) * 1988-01-25 1991-12-03 Nippon Mining Co., Ltd. Method for producing a iii-v compound semiconductor device with a phosphoric oxide insulating layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2182969A1 (enExample) * 1972-05-01 1973-12-14 Ibm
DE2351216A1 (de) * 1972-10-12 1974-04-25 Hayashi Kentaro Verfahren zur bildung von isolationszonen fuer die lichtuebertragung in einem verbundhalbleitenden optischen integrierten kreis

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2182969A1 (enExample) * 1972-05-01 1973-12-14 Ibm
DE2351216A1 (de) * 1972-10-12 1974-04-25 Hayashi Kentaro Verfahren zur bildung von isolationszonen fuer die lichtuebertragung in einem verbundhalbleitenden optischen integrierten kreis

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178133A3 (en) * 1984-10-08 1986-12-30 Fujitsu Limited Semiconductor integrated circuit device
US4791471A (en) * 1984-10-08 1988-12-13 Fujitsu Limited Semiconductor integrated circuit device
US5070035A (en) * 1988-01-25 1991-12-03 Nippon Mining Co., Ltd. Method for producing a iii-v compound semiconductor device with a phosphoric oxide insulating layer

Also Published As

Publication number Publication date
FR2454183B1 (enExample) 1982-05-21

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Legal Events

Date Code Title Description
ST Notification of lapse